scholarly journals Influence of an ultrathin GaAs interlayer on the structural properties of InAs∕InGaAsP∕InP (001) quantum dots investigated by cross-sectional scanning tunneling microscopy

2008 ◽  
Vol 92 (8) ◽  
pp. 083103 ◽  
Author(s):  
J. M. Ulloa ◽  
S. Anantathanasarn ◽  
P. J. van Veldhoven ◽  
P. M. Koenraad ◽  
R. Nötzel
Keyword(s):  
Quantum Dots ◽  
Scanning Tunneling Microscopy ◽  
Structural Properties ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Cross Sectional

scholarly journals Capping process of InAs∕GaAs quantum dots studied by cross-sectional scanning tunneling microscopy

2004 ◽  
Vol 85 (23) ◽  
pp. 5697-5699 ◽  
Author(s):  
Q. Gong ◽  
P. Offermans ◽  
R. Nötzel ◽  
P. M. Koenraad ◽  
J. H. Wolter
Keyword(s):  
Quantum Dots ◽  
Scanning Tunneling Microscopy ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Cross Sectional

Cross-sectional scanning tunneling microscopy of InGaAs quantum dots

1998 ◽  
Author(s):  
C.K. Harnett ◽  
S. Evoy ◽  
H.G. Craighead ◽  
K. Pond ◽  
J. Kim ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Scanning Tunneling Microscopy ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Cross Sectional

scholarly journals Capping of InAs quantum dots grown on (311)B InP studied by cross-sectional scanning tunneling microscopy

2006 ◽  
Vol 89 (2) ◽  
pp. 023119 ◽  
Author(s):  
C. Çelebi ◽  
J. M. Ulloa ◽  
P. M. Koenraad ◽  
A. Simon ◽  
A. Letoublon ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Scanning Tunneling Microscopy ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Cross Sectional ◽  
Inas Quantum Dots
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