Segregation effects during GaAs overgrowth of InAs and InGaAs quantum dots studied by cross-sectional scanning tunneling microscopy

2003 ◽  
Vol 0 (4) ◽  
pp. 1129-1132 ◽  
Author(s):  
H. Eisele ◽  
R. Timm ◽  
A. Lenz ◽  
Ch. Hennig ◽  
M. Ternes ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Scanning Tunneling Microscopy ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Cross Sectional

scholarly journals Capping process of InAs∕GaAs quantum dots studied by cross-sectional scanning tunneling microscopy

2004 ◽  
Vol 85 (23) ◽  
pp. 5697-5699 ◽  
Author(s):  
Q. Gong ◽  
P. Offermans ◽  
R. Nötzel ◽  
P. M. Koenraad ◽  
J. H. Wolter
Keyword(s):  
Quantum Dots ◽  
Scanning Tunneling Microscopy ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Cross Sectional

Cross-sectional scanning tunneling microscopy of InGaAs quantum dots

1998 ◽  
Author(s):  
C.K. Harnett ◽  
S. Evoy ◽  
H.G. Craighead ◽  
K. Pond ◽  
J. Kim ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Scanning Tunneling Microscopy ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Cross Sectional

scholarly journals Capping of InAs quantum dots grown on (311)B InP studied by cross-sectional scanning tunneling microscopy

2006 ◽  
Vol 89 (2) ◽  
pp. 023119 ◽  
Author(s):  
C. Çelebi ◽  
J. M. Ulloa ◽  
P. M. Koenraad ◽  
A. Simon ◽  
A. Letoublon ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Scanning Tunneling Microscopy ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Cross Sectional ◽  
Inas Quantum Dots
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