Tougher ultrafine grain Cu via high-angle grain boundaries and low dislocation density

2008 ◽  
Vol 92 (8) ◽  
pp. 081903 ◽  
Author(s):  
Y. H. Zhao ◽  
J. F. Bingert ◽  
Y. T. Zhu ◽  
X. Z. Liao ◽  
R. Z. Valiev ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Grain Boundaries ◽  
Ultrafine Grain ◽  
High Angle ◽  
Low Dislocation Density

Observations of dislocation interactions with recrystallized grain boundaries

1988 ◽  
Vol 46 ◽  
pp. 628-629
Author(s):  
C. W. Price
Keyword(s):  
Dislocation Density ◽  
Grain Boundary ◽  
Strain Rate ◽  
Grain Boundaries ◽  
Dislocation Structure ◽  
Hot Deformation ◽  
Static Recrystallization ◽  
High Dislocation Density ◽  
High Angle ◽  
Dislocation Interactions

Little evidence exists on the interaction of individual dislocations with recrystallized grain boundaries, primarily because of the severely overlapping contrast of the high dislocation density usually present during recrystallization. Interesting evidence of such interaction, Fig. 1, was discovered during examination of some old work on the hot deformation of Al-4.64 Cu. The specimen was deformed in a programmable thermomechanical instrument at 527 C and a strain rate of 25 cm/cm/s to a strain of 0.7. Static recrystallization occurred during a post anneal of 23 s also at 527 C. The figure shows evidence of dissociation of a subboundary at an intersection with a recrystallized high-angle grain boundary. At least one set of dislocations appears to be out of contrast in Fig. 1, and a grainboundary precipitate also is visible. Unfortunately, only subgrain sizes were of interest at the time the micrograph was recorded, and no attempt was made to analyze the dislocation structure.

A Predictive Framework for Dislocation-Density Pile-Ups in Crystalline Systems With Coincident Site Lattice and Random Grain Boundaries

2017 ◽  
Vol 139 (2) ◽  
Author(s):  
David M. Bond ◽  
Mohammed A. Zikry
Keyword(s):  
Dislocation Density ◽  
Grain Boundaries ◽  
Coincident Site Lattice ◽  
Local Stress ◽  
Face Centered Cubic ◽  
Slip Systems ◽  
Triple Junctions ◽  
High Angle ◽  
Site Lattice ◽  
Wide Range

Evolving dislocation-density pile-ups at grain-boundaries (GBs) spanning a wide range of coincident site lattice (CSL) and random GB misorientations in face-centered cubic (fcc) bicrystals and polycrystalline aggregates has been investigated. A dislocation-density GB interaction scheme coupled to a dislocation-density-based crystalline plasticity formulation was used in a nonlinear finite element (FE) framework to understand how different GB orientations and GB-dislocation-density interactions affect local and overall behavior. An effective Burger's vector of residual dislocations was obtained for fcc bicrystals and compared with molecular dynamics (MDs) predictions of static GB energy, as well as dislocation-density transmission at GB interfaces. Dislocation-density pile-ups and accumulations of residual dislocations at GBs and triple junctions (TJs) were analyzed for a polycrystalline copper aggregate with Σ1, Σ3, Σ7, Σ13, and Σ21 CSLs and random high-angle GBs to understand and predict the effects of GB misorientation on pile-up formation and evolution. The predictions indicate that dislocation-density pile-ups occur at GBs with significantly misoriented slip systems and large residual Burger's vectors, such as Σ7, Σ13, and Σ21 CSLs and random high-angle GBs, and this resulted in heterogeneous inelastic deformations across the GB and local stress accumulations. GBs with low misorientations of slip systems had high transmission, no dislocation-density pile-ups, and lower stresses than the high-angle GBs. This investigation provides a fundamental understanding of how different representative GB orientations affect GB behavior, slip transmission, and dislocation-density pile-ups at a relevant microstructural scale.

Measurement of the Displacement Across a Coincidence Grain Boundary

1977 ◽  
Vol 35 ◽  
pp. 124-125
Author(s):  
J. W. Matthews ◽  
W. M. Stobbs
Keyword(s):  
Grain Boundary ◽  
Grain Boundaries ◽  
Stacking Fault ◽  
The Other ◽  
Measuring Technique ◽  
High Angle ◽  
Twin Boundaries ◽  
Rigid Displacement ◽  
Cubic Crystals ◽  
Lattice Displacement

Many high-angle grain boundaries in cubic crystals are thought to be either coincidence boundaries (1) or coincidence boundaries to which grain boundary dislocations have been added (1,2). Calculations of the arrangement of atoms inside coincidence boundaries suggest that the coincidence lattice will usually not be continuous across a coincidence boundary (3). There will usually be a rigid displacement of the lattice on one side of the boundary relative to that on the other. This displacement gives rise to a stacking fault in the coincidence lattice.Recently, Pond (4) and Smith (5) have measured the lattice displacement at coincidence boundaries in aluminum. We have developed (6) an alternative to the measuring technique used by them, and have used it to find two of the three components of the displacement at {112} lateral twin boundaries in gold. This paper describes our method and presents a brief account of the results we have obtained.

Determination of the lattice translation across {110} APBs in GaAs

1988 ◽  
Vol 46 ◽  
pp. 600-601
Author(s):  
D.R. Rasmussen ◽  
N.-H. Cho ◽  
C.B. Carter
Keyword(s):  
Grain Boundaries ◽  
Lower Energy ◽  
Antiphase Boundary ◽  
The Other ◽  
Boundary Structure ◽  
Interface Plane ◽  
Inversion Symmetry ◽  
High Angle ◽  
Equilibrium Distance

Domains in GaAs can exist which are related to one another by the inversion symmetry, i.e., the sites of gallium and arsenic in one domain are interchanged in the other domain. The boundary between these two different domains is known as an antiphase boundary [1], In the terminology used to describe grain boundaries, the grains on either side of this boundary can be regarded as being Σ=1-related. For the {110} interface plane, in particular, there are equal numbers of GaGa and As-As anti-site bonds across the interface. The equilibrium distance between two atoms of the same kind crossing the boundary is expected to be different from the length of normal GaAs bonds in the bulk. Therefore, the relative position of each grain on either side of an APB may be translated such that the boundary can have a lower energy situation. This translation does not affect the perfect Σ=1 coincidence site relationship. Such a lattice translation is expected for all high-angle grain boundaries as a way of relaxation of the boundary structure.

Precipitation on Low Angle Boundaries in Al-Zn-Mg

1980 ◽  
Vol 38 ◽  
pp. 374-375
Author(s):  
Diane M. Vanderwalker
Keyword(s):  
Grain Boundaries ◽  
High Strength ◽  
Boundary Structure ◽  
Aircraft Industry ◽  
Precipitate Free Zone ◽  
High Angle ◽  
Adjacent Region ◽  
Free Zone ◽  
Widespread Interest

There is a widespread interest in understanding the properties of Al-base alloys so that progress can be made toward extending their present applications in the aircraft industry. Al-Zn-Mg is precipitation hardened to gain its high strength; however, during aging the formation of heterogeneous precipitates on the grain boundaries creates a precipitate-free zone in the adjacent region. Since high angle grain boundaries are not easily characterized, it is difficult to establish a relationship between the precipitate and the boundary structure. Therefore, this study involves precipitation on low angle grain boundaries where the boundary and the precipitate can be fully analyzed.

Low dislocation density AlN on sapphire prepared by double sputtering and annealing

2020 ◽  
Vol 13 (9) ◽  
pp. 095501
Author(s):  
Ding Wang ◽  
Kenjiro Uesugi ◽  
Shiyu Xiao ◽  
Kenji Norimatsu ◽  
Hideto Miyake
Keyword(s):  
Dislocation Density ◽  
Low Dislocation Density

Growth Of Low-Dislocation-Density InP Single Crystals By The VCZ Method

1989 ◽  
Author(s):  
M. Tatsumi ◽  
T. Kawase ◽  
T. Araki ◽  
N. Yamabayashi ◽  
T. Iwasaki ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Single Crystals ◽  
Low Dislocation Density

Electron Transport in Highly Textured Metal Films Grown by Partially Ionized Beam Deposition

1995 ◽  
Vol 403 ◽  
Author(s):  
S. R. Soss ◽  
B. Gittleman ◽  
K. E. Mello ◽  
T.-M. Lu ◽  
S. L. Lee
Keyword(s):  
Dislocation Density ◽  
Grain Boundaries ◽  
Electron Scattering ◽  
Delta Function ◽  
Fiber Texture ◽  
Cu Films ◽  
Film Resistivity ◽  
Average Dislocation Density ◽  
Amorphous Substrates ◽  
Partially Ionized

AbstractIn principle, the resistivity of bulk FCC cubic materials should not depend on the orientation due to the fact that the conductivity tensor is single valued. However, we show that this conclusion is not valid for thin films. Deposition of highly oriented Al, Ag, and Cu films on amorphous substrates using the partially ionized beam (PIB) technique exhibit a resistivity which is strongly correlated with the texture, i.e., the tighter the texture, the lower the film resistivity. We model the film as an array of grains whose grain boundaries can be considered as delta function potentials for electron scattering and the strength of the potentials can be calculated from the measured resistivity of the films. On the other hand, the fiber texture distribution of the the films is obtained from X-ray pole figure measurements, and Monte-Carlo simulations are then performed using this data to determine the average dislocation density at the grain boundaries due to the grain to grain crystallographic mismatch. We show that the transmittance coefficient for electron scattering, and therefore the film resistivity, is a monotonically increasing function of the average dislocation density. We therefore conclude that the structure of grain boundaries in a thin film provides the necessary mechanism by which the resistivity of an FCC cubic metal can depend on the texture.

Trenched epitaxial lateral overgrowth of fast coalesced a-plane GaN with low dislocation density

2006 ◽  
Vol 89 (25) ◽  
pp. 251109 ◽  
Author(s):  
Te-Chung Wang ◽  
Tien-Chang Lu ◽  
Tsung-Shine Ko ◽  
Hao-Chung Kuo ◽  
Min Yu ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Epitaxial Lateral Overgrowth ◽  
Lateral Overgrowth ◽  
Low Dislocation Density
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