Room temperature visible photoluminescence of silicon nanocrystallites embedded in amorphous silicon carbide matrix

2008 ◽  
Vol 103 (6) ◽  
pp. 063507 ◽  
Author(s):  
U. Coscia ◽  
G. Ambrosone ◽  
D. K. Basa
Keyword(s):  
Silicon Carbide ◽  
Amorphous Silicon ◽  
Room Temperature ◽  
Amorphous Silicon Carbide ◽  
Visible Photoluminescence ◽  
Carbide Matrix ◽  
Silicon Nanocrystallites ◽  
Silicon Carbide Matrix

Preparation of Nanocrystalline Silicon in Amorphous Silicon Carbide Matrix

2006 ◽  
Vol 45 (No. 40) ◽  
pp. L1064-L1066 ◽  
Author(s):  
Yasuyoshi Kurokawa ◽  
Shinsuke Miyajima ◽  
Akira Yamada ◽  
Makoto Konagai
Keyword(s):  
Silicon Carbide ◽  
Amorphous Silicon ◽  
Nanocrystalline Silicon ◽  
Amorphous Silicon Carbide ◽  
Carbide Matrix ◽  
Silicon Carbide Matrix

Amorphous Silicon Carbide (α-SiC) Thin Square Membranes for Resonant Micromechanical Devices

2012 ◽  
Vol 717-720 ◽  
pp. 533-536 ◽  
Author(s):  
Andrew C. Barnes ◽  
Christian A. Zorman ◽  
Philip X.L. Feng
Keyword(s):  
Silicon Carbide ◽  
Amorphous Silicon ◽  
Room Temperature ◽  
Wide Frequency Range ◽  
Membrane Thickness ◽  
Quality Factors ◽  
Frequency Spectra ◽  
Amorphous Silicon Carbide ◽  
Resonant Modes ◽  
Micromechanical Devices

We report an initial experimental exploration of engineering very thin, suspended amorphous silicon carbide (a-SiC) membranes into vibrating micromechanical devices. We show that micromachined a-SiC thin square membranes can make interesting multiple-mode flexural resonators, with frequency spectra exhibiting many measurable resonant modes over a wide frequency range (100kHz–10MHz) in the low radio frequency (RF) bands. Initial demonstration and preliminary data suggest interesting and rich dynamical, nonlinear, and dissipative properties in these micromechanical resonances. Specifically, for instance, at room temperature (T≈300K) and in moderate vacuum (e.g., ~20mTorr), resonant modes of an a-SiC square membrane (thickness: t≈1.5µm, size: 1mm×1mm) are observed in the ~100kHz–5MHz range, with measured quality factors (Q’s) in the range of ~2,500–9,000.

Amorphous Silicon Carbide Film Formation at Room Temperature by Monomethylsilane Gas

2013 ◽  
Vol 740-742 ◽  
pp. 235-238
Author(s):  
Hitoshi Habuka ◽  
Masaki Tsuji ◽  
Yusuke Ando
Keyword(s):  
Silicon Carbide ◽  
Amorphous Silicon ◽  
Room Temperature ◽  
Film Formation ◽  
Argon Plasma ◽  
Chemical Vapor ◽  
Amorphous Silicon Carbide ◽  
Silicon Carbide Film ◽  
Silicon Carbon ◽  
Thin Film Formation

The silicon carbide thin film formation process, completely performed at room temperature, was developed by argon plasma and a chemical vapor deposition using monomethylsilane gas. Silicon-carbon bonds were found to exist in the obtained film, the surface of which could remain specular after exposure to hydrogen chloride gas at 800 oC. The silicon dangling bonds formed at the silicon surface by the argon plasma are considered to react with the monomethylsilane molecules at room temperature to produce the amorphous silicon carbide film.

Room-temperature Photoluminescence at 1540 nm from Amorphous Silicon Carbide Films Implanted with Erbium

2004 ◽  
Vol 815 ◽  
Author(s):  
Spyros Gallis ◽  
Harry Efstathiadis ◽  
Mengbing Huang ◽  
Alain E. Kaloyeros ◽  
Ei Ei Nyein ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Amorphous Silicon ◽  
Room Temperature ◽  
Thermal Quenching ◽  
Chemical Vapor ◽  
Nuclear Reaction Analysis ◽  
Implantation Energy ◽  
Amorphous Silicon Carbide ◽  
Room Temperature Photoluminescence ◽  
Sic Films

AbstractIn the present work, strong room-temperature photoluminescence (PL) at 1540 nm is reported from erbium-implanted and post-annealed amorphous silicon carbide (a-SiC:Er) films. The stoichiometric SiC films were grown by thermal chemical vapor deposition (TCVD) at 800°C, and then implanted to Er fluence of 3×1015 ions/cm2 using 380 keV implantation energy. Post-implantation annealing was carried out at the temperature range of 550°C to 1350°C in argon (Ar) ambient. The resulting SiC films were characterized by Auger electron spectroscopy (AES), Rutherford backscattering (RBS), Fourier transform infrared spectroscopy (FTIR), nuclear reaction analysis (NRA), x-ray diffraction (XRD), and high-resolution transmission electron microscope (HRTEM). Clear PL behavior was seen from the annealed a-SiC:Er samples, even at room temperature, with PL intensity reaching a maximum for samples annealed at 900°C.Additional studies of thermal quenching of Er luminescence from a-SiC:Er samples annealed at 900°C indicated that as the sample temperature increased from 14K to room temperature, the luminescence intensity at 1540 nm dropped by a factor of ∼ 3.6. Moreover, the PL spectra of the a-SiC:Er samples did not exhibit any defect-generated luminescence. It is suggested that the lower density of Si and C vacancies in the stoichiometric a-SiC:Er, as compared to its non-stoichiometric a-Si1-xCx counterpart, along with the incorporation of a higher Er dopant concentration, can effectively diminish defect-produced luminescence and lead to a significant improvement in PL performance.These properties suggest that stoichiometric a-SiC:Er may be a good candidate for producing optoelectronic devices operating in the 1540 nm region.

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