Toggle switching of weakly coupled synthetic antiferromagnet for high-density magnetoresistive random access memory

2008 ◽  
Vol 103 (7) ◽  
pp. 07A716 ◽  
Author(s):  
Y. Fukuma ◽  
H. Fujiwara ◽  
P. B. Visscher
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
High Density ◽  
Access Memory ◽  
Synthetic Antiferromagnet ◽  
Weakly Coupled ◽  
Magnetoresistive Random Access Memory

High density submicron magnetoresistive random access memory (invited)

1999 ◽  
Vol 85 (8) ◽  
pp. 5822-5827 ◽  
Author(s):  
S. Tehrani ◽  
E. Chen ◽  
M. Durlam ◽  
M. DeHerrera ◽  
J. M. Slaughter ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
High Density ◽  
Access Memory ◽  
Magnetoresistive Random Access Memory

Magnetoelectric Assisted 180° Magnetization Switching for Electric Field Addressable Writing in Magnetoresistive Random-Access Memory

ACS Nano ◽  
2014 ◽  
Vol 8 (8) ◽  
pp. 7793-7800 ◽  
Author(s):  
Zhiguang Wang ◽  
Yue Zhang ◽  
Yaojin Wang ◽  
Yanxi Li ◽  
Haosu Luo ◽  
...  
Keyword(s):  
Electric Field ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Magnetization Switching ◽  
Magnetoresistive Random Access Memory
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