Optically detected magnetic resonance of deep centers in molecular beam epitaxy ZnSe:N

1993 ◽  
Vol 63 (17) ◽  
pp. 2411-2413 ◽  
Author(s):  
B. N. Murdin ◽  
B. C. Cavenett ◽  
C. R. Pidgeon ◽  
J. Simpson ◽  
I. Hauksson ◽  
...  
Keyword(s):  
Magnetic Resonance ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Deep Centers ◽  
Optically Detected Magnetic Resonance ◽  
Optically Detected

Photoluminescence and optically detected magnetic resonance of Si/Si1−xGexstrained-layer superlattices grown by molecular-beam epitaxy

1993 ◽  
Vol 47 (3) ◽  
pp. 1305-1315 ◽  
Author(s):  
E. R. Glaser ◽  
T. A. Kennedy ◽  
D. J. Godbey ◽  
P. E. Thompson ◽  
K. L. Wang ◽  
...  
Keyword(s):  
Magnetic Resonance ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optically Detected Magnetic Resonance ◽  
Optically Detected

Optically Detected Magnetic Resonance of Arsenic Antisites in GaAs MBE Layers Grown at Low Temperatures

1991 ◽  
Vol 241 ◽  
Author(s):  
F. C. Rong ◽  
L. Fotiadis ◽  
H.-J. Sun ◽  
G. D. Watkins ◽  
M. A. Taysing-Lara ◽  
...  
Keyword(s):  
Magnetic Resonance ◽  
Low Temperatures ◽  
Molecular Beam ◽  
Magnetic Circular Dichroism ◽  
Paramagnetic Resonance ◽  
Optically Detected Magnetic Resonance ◽  
Order Of Magnitude ◽  
Optically Detected ◽  
Electron Paramagnetic ◽  
Substrate Temperatures

ABSTRACTObservation of Arsenic antisites (AsGa) in GaAs layers grown by molecular beam epitaxy (MBE) at low substrate temperatures (∼ 200°C) is reported, using electron paramagnetic resonance (EPR), magnetic circular dichroism in absorption (MCDA), and MCDA tagged by optically detected magnetic resonance (MCDA-ODMR). This experiment confirms that there is a MCD absorption band directly associated with AsGa in the GaAs layers. The AsGa concentration in the GaAs layers is found to decrease by about one order of magnitude after annealing at 600°C for two minutes.

Optically Detected Magnetic Resonance and Double Beam Photoluminescence of CdS/HgS/CdS Nanoparticles

1998 ◽  
Vol 536 ◽  
Author(s):  
H. Porteanu ◽  
A. Glozman ◽  
E. Lifshitz ◽  
A. Eychmüller ◽  
H. Weller
Keyword(s):  
Optical Properties ◽  
Magnetic Resonance ◽  
Cds Nanoparticles ◽  
Electron Hole ◽  
Cladding Layer ◽  
Double Beam ◽  
Optically Detected Magnetic Resonance ◽  
Optically Detected ◽  
Cladding Layers ◽  
Hole Recombination

AbstractCdS/HgS/CdS nanoparticles consist of a CdS core, epitaxially covered by one or two monolayers of HgS and additional cladding layers of CdS. The present paper describes our efforts to identify the influence of CdS/HgS/CdS interfaces on the localization of the photogenerated carriers deduced from the magneto-optical properties of the materials. These were investigated by the utilization of optically detected magnetic resonance (ODMR) and double-beam photoluminescence spectroscopy. A photoluminescence (PL) spectrum of the studied material, consists of a dominant exciton located at the HgS layer, and additional non-excitonic band, presumably corresponding to the recombination of trapped carriers at the interface. The latter band can be attenuated using an additional red excitation. The ODMR measurements show the existence of two kinds of electron-hole recombination. These electron-hole pairs maybe trapped either at a twin packing of a CdS/HgS interface, or at an edge dislocation of an epitaxial HgS or a CdS cladding layer.

Optically detected magnetic resonance study of SiC:Ti

1985 ◽  
Vol 32 (4) ◽  
pp. 2273-2284 ◽  
Author(s):  
K. M. Lee ◽  
Le Si Dang ◽  
G. D. Watkins ◽  
W. J. Choyke
Keyword(s):  
Magnetic Resonance ◽  
Magnetic Resonance Study ◽  
Optically Detected Magnetic Resonance ◽  
Optically Detected

Optically detected magnetic resonance studies of defects in 3C SiC epitaxial layers

1997 ◽  
Vol 6 (10) ◽  
pp. 1381-1384 ◽  
Author(s):  
N.T. Son ◽  
E. Sörman ◽  
W.M. Chen ◽  
C. Hallin ◽  
O. Kordina ◽  
...  
Keyword(s):  
Magnetic Resonance ◽  
Epitaxial Layers ◽  
Magnetic Resonance Studies ◽  
Optically Detected Magnetic Resonance ◽  
Optically Detected
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