scholarly journals Polarization dependent coupling of surface plasmon on a one-dimensional Ag grating with an InGaN∕GaN dual-quantum-well structure

2008 ◽  
Vol 92 (1) ◽  
pp. 013108 ◽  
Author(s):  
Kun-Ching Shen ◽  
Cheng-Yen Chen ◽  
Chi-Feng Huang ◽  
Jhy-Yang Wang ◽  
Yen-Cheng Lu ◽  
...  
Keyword(s):  
Quantum Well ◽  
Surface Plasmon ◽  
One Dimensional ◽  
Quantum Well Structure ◽  
Dual Quantum

A new one‐dimensional quantum well structure

1985 ◽  
Vol 47 (12) ◽  
pp. 1324-1326 ◽  
Author(s):  
Yia‐Chung Chang ◽  
L. L. Chang ◽  
L. Esaki
Keyword(s):  
Quantum Well ◽  
One Dimensional ◽  
Quantum Well Structure

Research on the Electronic Tunneling in Asymmetric Dual-Quantum-Well

2012 ◽  
Vol 542-543 ◽  
pp. 953-958
Author(s):  
Xia Zheng Bu ◽  
Jian Wang ◽  
Ju Liang Shi ◽  
Hui Zhao
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Inductively Coupled Plasma ◽  
Energy Levels ◽  
Tunneling Effect ◽  
Material System ◽  
Inductively Coupled ◽  
Quantum Well Structure ◽  
Electronic Tunneling ◽  
Dual Quantum

An Al0.3Ga0.7As/GaAs/Al0.3Ga0.7As/GaAs/Al0.3Ga0.7As asymmetric dual-quantum-well structure was designed. The barrier thickness between the dual quantum wells is 48Å, it is thick enough to inhibit the mutual cross-interference between the energy levels within the two quantum wells. This material system was grown on a GaAs substrate by solid source molecular beam epitaxy, and the device was fabricated with rat electrodes using inductively coupled plasma etching mesa process. The tunneling effect that electron transfer through the dual-quantum-well structure was observed in the device I-V feature, it was calculated and demonstrated by transmission matrix method and Ariy Function numerical transform.

Improvement of the Lifetime of a GaAs-Based Laser on Si with a Strained Quantum-Well Structure.

1994 ◽  
Vol 22 (12) ◽  
pp. 977-984
Author(s):  
Yoshiaki HASEGAWA ◽  
Takashi EGAWA ◽  
Takashi JIMBO ◽  
Masayoshi UMENO
Keyword(s):  
Quantum Well ◽  
Quantum Well Structure ◽  
Strained Quantum Well

Modulation-doped (AlGa)As/GaAs quantum well structure with high electron sheet density

1989 ◽  
Vol 25 (17) ◽  
pp. 1147
Author(s):  
A.L. Powell ◽  
J.S. Roberts ◽  
P.I. Rockett ◽  
T.J. Foster ◽  
L. Eaves
Keyword(s):  
Quantum Well ◽  
High Electron ◽  
Quantum Well Structure ◽  
Electron Sheet ◽  
Sheet Density

scholarly journals Topological correlators and surface defects from equivariant cohomology

2020 ◽  
Vol 2020 (9) ◽  
Author(s):  
Rodolfo Panerai ◽  
Antonio Pittelli ◽  
Konstantina Polydorou
Keyword(s):  
Quantum Mechanics ◽  
Equivariant Cohomology ◽  
Surface Defects ◽  
Star Product ◽  
Three Dimensional ◽  
Three Dimensions ◽  
Dimensional System ◽  
The Novel ◽  
One Dimensional ◽  
Dual Quantum

Abstract We find a one-dimensional protected subsector of $$ \mathcal{N} $$ N = 4 matter theories on a general class of three-dimensional manifolds. By means of equivariant localization we identify a dual quantum mechanics computing BPS correlators of the original model in three dimensions. Specifically, applying the Atiyah-Bott-Berline-Vergne formula to the original action demonstrates that this localizes on a one-dimensional action with support on the fixed-point submanifold of suitable isometries. We first show that our approach reproduces previous results obtained on S3. Then, we apply it to the novel case of S2× S1 and show that the theory localizes on two noninteracting quantum mechanics with disjoint support. We prove that the BPS operators of such models are naturally associated with a noncom- mutative star product, while their correlation functions are essentially topological. Finally, we couple the three-dimensional theory to general $$ \mathcal{N} $$ N = (2, 2) surface defects and extend the localization computation to capture the full partition function and BPS correlators of the mixed-dimensional system.

Sign in / Sign up

Export Citation Format

Share Document