Current-perpendicular-to-plane giant magnetoresistance in half-metallic pseudo-spin-valve structures

2008 ◽  
Vol 103 (7) ◽  
pp. 07D702 ◽  
Author(s):  
D. Tripathy ◽  
A. O. Adeyeye
Keyword(s):  
Giant Magnetoresistance ◽  
Spin Valve ◽  
Half Metallic ◽  
Current Perpendicular To Plane

Low resistance spin-valve-type current-perpendicular-to-plane giant magnetoresistance with Co75Fe25

2005 ◽  
Vol 97 (10) ◽  
pp. 10C507 ◽  
Author(s):  
Ken-ichi Aoshima ◽  
Nobuhiko Funabashi ◽  
Kenji Machida ◽  
Yasuyoshi Miyamoto ◽  
Kiyoshi Kuga
Keyword(s):  
Giant Magnetoresistance ◽  
Spin Valve ◽  
Low Resistance ◽  
Current Perpendicular To Plane

Output enhancement of spin-valve giant magnetoresistance in current-perpendicular-to-plane geometry

2002 ◽  
Vol 92 (5) ◽  
pp. 2646-2650 ◽  
Author(s):  
H. Yuasa ◽  
M. Yoshikawa ◽  
Y. Kamiguchi ◽  
K. Koi ◽  
H. Iwasaki ◽  
...  
Keyword(s):  
Giant Magnetoresistance ◽  
Spin Valve ◽  
Plane Geometry ◽  
Current Perpendicular To Plane

Enhancement of current-perpendicular-to-plane giant magnetoresistance by insertion of amorphous ferromagnetic underlayer in Heusler alloy-based spin-valve structures

2016 ◽  
Vol 10 (1) ◽  
pp. 013006 ◽  
Author(s):  
Young-suk Choi ◽  
Tomoya Nakatani ◽  
John C. Read ◽  
Matthew J. Carey ◽  
Derek A. Stewart ◽  
...  
Keyword(s):  
Heusler Alloy ◽  
Giant Magnetoresistance ◽  
Spin Valve ◽  
Current Perpendicular To Plane

scholarly journals Giant magnetoresistance ratio in a current-perpendicular-to-plane spin valve based on an inverse Heusler alloy Ti2NiAl

2019 ◽  
Vol 10 ◽  
pp. 1658-1665
Author(s):  
Yu Feng ◽  
Zhou Cui ◽  
Bo Wu ◽  
Jianwei Li ◽  
Hongkuan Yuan ◽  
...  
Keyword(s):  
Transmission Coefficient ◽  
Heusler Alloy ◽  
Giant Magnetoresistance ◽  
Magnetic Moments ◽  
Heusler Alloys ◽  
Spin Valve ◽  
Total Transmission ◽  
Higher Spin ◽  
Magnetoresistance Ratio ◽  
Current Perpendicular To Plane

A Ti2NiAl inverse Heusler alloy based current-perpendicular-to-plane (CPP) spin valve (SV) with various kinds of atomic terminated interfaces has been designed to explore the potential application of Heusler alloys in spintronics devices. By performing first principles calculations combined with the nonequilibrium Green’s function, it is revealed that spin magnetic moments of interfacial atoms suffer a decrease, and the electronic structure shows that the TiNiB-terminated structure possesses the largest interface spin polarization of ≈55%. Our study on spin-transport properties indicates that the total transmission coefficient at the Fermi level mainly comes from the contribution from the spin up electrons, which are regarded as the majority of the spin electrons. When the two electrodes of the CPP-SV device are in parallel magnetization configuration, the interface containing Ti and Ni atoms possesses a higher spin up transmission coefficient than the interface containing Ti and Al atoms. The device with the TiNiB-terminated interface possesses the largest magnetoresistance ratio of 3.28 × 105, and it has great application potential in spintronics devices.

scholarly journals COMPARATIVE STUDY OF SPIN INJECTION AND TRANSPORT IN Alq3 AND Co–PHTHALOCYANINE-BASED ORGANIC SPIN VALVES

SPIN ◽  
2014 ◽  
Vol 04 (02) ◽  
pp. 1440009 ◽  
Author(s):  
SAYANI MAJUMDAR ◽  
SUKUMAR DEY ◽  
HANNU HUHTINEN ◽  
JOHNNY DAHL ◽  
MARJUKKA TUOMINEN ◽  
...  
Keyword(s):  
Single Molecule ◽  
Giant Magnetoresistance ◽  
Chemical Reactivity ◽  
Spin Injection ◽  
Spin Valve ◽  
Spin Valves ◽  
Half Metallic ◽  
High Expectations ◽  
Spacer Layer ◽  
Spin Polarized

Recent experimental reports suggest the formation of a highly spin-polarized interface ("spinterface") between a ferromagnetic (FM) Cobalt ( Co ) electrode and a metal-phthalocyanine (Pc) molecule. Another report shows an almost 60% giant magnetoresistance (GMR) response measured on Co / H 2 Pc -based single molecule spin valves. In this paper, we compare the spin injection and transport properties of organic spin valves with two different organic spacers, namely Tris(8-hydroxyquinolinato) aluminum ( Alq 3) and CoPc sandwiched between half-metallic La 0.7 Sr 0.3 MnO 3 (LSMO) and Co electrodes. Alq 3-based spin valves exhibit clear and reproducible spin valve switching with almost 35% negative GMR at 10 K, in accordance with previous reports. In contrast, cobalt-pthalocyanine ( CoPc )-based spin valves fail to show clear GMR response above noise level despite high expectations based on recent reports. Investigations of electronic, magnetic and magnetotransport properties of electrode/spacer interfaces of LSMO/ CoPc / Co devices offer three plausible explanations for the absence of GMR: (1) CoPc films are strongly chemisorbed on the LSMO surface. This improves the LSMO magnetic properties but also induces local traps at the LSMO interface for spin-polarized charge carriers. (2) At the Co / CoPc interface, diffusion of Co atoms into the organic semiconductor (OS) layer and chemical reactivity between Co and the OS deteriorates the FM properties of Co . This renders the Co / CoPc interface as unsuitable for efficient spin injection. (3) The presence of heavy Co atoms in CoPc leads to large spin–orbit coupling in the spacer. The spin relaxation time in the CoPc layer is therefore considerably smaller compared to Alq 3. Based on these findings, we suggest that the absence of GMR in CoPc -based spin valves is caused by a combined effect of inefficient spin injection from FM contacts and poor spin transport in the CoPc spacer layer.

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