Large magnetoresistance ratio of 10% by Fe50Co50 layers for current-confined-path current-perpendicular-to-plane giant magnetoresistance spin-valve films

2005 ◽  
Vol 87 (8) ◽  
pp. 082507 ◽  
Author(s):  
Hideaki Fukuzawa ◽  
Hiromi Yuasa ◽  
Susumu Hashimoto ◽  
Hitoshi Iwasaki ◽  
Yoichiro Tanaka
Keyword(s):  
Giant Magnetoresistance ◽  
Spin Valve ◽  
Magnetoresistance Ratio ◽  
Current Perpendicular To Plane

scholarly journals Giant magnetoresistance ratio in a current-perpendicular-to-plane spin valve based on an inverse Heusler alloy Ti2NiAl

2019 ◽  
Vol 10 ◽  
pp. 1658-1665
Author(s):  
Yu Feng ◽  
Zhou Cui ◽  
Bo Wu ◽  
Jianwei Li ◽  
Hongkuan Yuan ◽  
...  
Keyword(s):  
Transmission Coefficient ◽  
Heusler Alloy ◽  
Giant Magnetoresistance ◽  
Magnetic Moments ◽  
Heusler Alloys ◽  
Spin Valve ◽  
Total Transmission ◽  
Higher Spin ◽  
Magnetoresistance Ratio ◽  
Current Perpendicular To Plane

A Ti2NiAl inverse Heusler alloy based current-perpendicular-to-plane (CPP) spin valve (SV) with various kinds of atomic terminated interfaces has been designed to explore the potential application of Heusler alloys in spintronics devices. By performing first principles calculations combined with the nonequilibrium Green’s function, it is revealed that spin magnetic moments of interfacial atoms suffer a decrease, and the electronic structure shows that the TiNiB-terminated structure possesses the largest interface spin polarization of ≈55%. Our study on spin-transport properties indicates that the total transmission coefficient at the Fermi level mainly comes from the contribution from the spin up electrons, which are regarded as the majority of the spin electrons. When the two electrodes of the CPP-SV device are in parallel magnetization configuration, the interface containing Ti and Ni atoms possesses a higher spin up transmission coefficient than the interface containing Ti and Al atoms. The device with the TiNiB-terminated interface possesses the largest magnetoresistance ratio of 3.28 × 105, and it has great application potential in spintronics devices.

Low resistance spin-valve-type current-perpendicular-to-plane giant magnetoresistance with Co75Fe25

2005 ◽  
Vol 97 (10) ◽  
pp. 10C507 ◽  
Author(s):  
Ken-ichi Aoshima ◽  
Nobuhiko Funabashi ◽  
Kenji Machida ◽  
Yasuyoshi Miyamoto ◽  
Kiyoshi Kuga
Keyword(s):  
Giant Magnetoresistance ◽  
Spin Valve ◽  
Low Resistance ◽  
Current Perpendicular To Plane

Output enhancement of spin-valve giant magnetoresistance in current-perpendicular-to-plane geometry

2002 ◽  
Vol 92 (5) ◽  
pp. 2646-2650 ◽  
Author(s):  
H. Yuasa ◽  
M. Yoshikawa ◽  
Y. Kamiguchi ◽  
K. Koi ◽  
H. Iwasaki ◽  
...  
Keyword(s):  
Giant Magnetoresistance ◽  
Spin Valve ◽  
Plane Geometry ◽  
Current Perpendicular To Plane

Enhancement of current-perpendicular-to-plane giant magnetoresistance by insertion of amorphous ferromagnetic underlayer in Heusler alloy-based spin-valve structures

2016 ◽  
Vol 10 (1) ◽  
pp. 013006 ◽  
Author(s):  
Young-suk Choi ◽  
Tomoya Nakatani ◽  
John C. Read ◽  
Matthew J. Carey ◽  
Derek A. Stewart ◽  
...  
Keyword(s):  
Heusler Alloy ◽  
Giant Magnetoresistance ◽  
Spin Valve ◽  
Current Perpendicular To Plane

Giant Magnetoresistance in FeMn/NiCoFe/Cu/NiCoFe Spin Valve Prepared by Opposed Target Magnetron Sputtering

2014 ◽  
Vol 979 ◽  
pp. 85-89 ◽  
Author(s):  
Ramli ◽  
Euis Sustini ◽  
Nurlaela Rauf ◽  
Mitra Djamal
Keyword(s):  
Magnetron Sputtering ◽  
Layer Thickness ◽  
Coercive Field ◽  
Giant Magnetoresistance ◽  
Room Temperature ◽  
Spin Valve ◽  
Ferromagnetic Layer ◽  
Vibrating Sample Magnetometer ◽  
Magnetoresistance Ratio ◽  
Scanning Electron

The giant magnetoresistance (GMR) effect in FeMn/NiCoFe/Cu/NiCoFe spin valve prepared by dc opposed target magnetron sputtering is reported. The spin valve thin films are characterized by Scanning Electron Microscopy (SEM), Vibrating Sample Magnetometer (VSM) and magnetoresistance ratio measurements. All measurements are performed in room temperature. The inserted 45 mm thickness FeMn layer to the NiCoFe/Cu/NiCoFe system can increase the GMR ratio up to 32.5%. The coercive field to be increased is compared with different FeMn layer thickness. Furthermore, the coercive field (Hc) decreases with increasing FeMn layer thickness. Magnitude of coercive field is 0.1 T, 0.09 T and 0.08 T for FeMn layer thickness is 30 nm, 45 nm and 60 nm, respectively. The FeMn layer is used to lock the magnetization in the ferromagnetic layer through the exchange anisotropy. This paper will describe the development of a GMR spin valve and its magnetic properties.

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