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Vol 102 (11) ◽  
pp. 113714 ◽  
Author(s):  
Kazushige Ueda ◽  
Kouhei Takafuji ◽  
Hiroshi Yanagi ◽  
Toshio Kamiya ◽  
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scholarly journals Indirect bandgap, optoelectronic properties, and photoelectrochemical characteristics of high-purity Ta3N5 photoelectrodes

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Vol 9 (36) ◽  
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Simon P. Lechner ◽  
Chang-Ming Jiang ◽  
Giulia Folchi Heunecke ◽  
Frans Munnik ◽  
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Electronic Structure ◽  
Electronic Properties ◽  
High Purity ◽  
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The (opto)electronic properties of Ta3N5 photoelectrodes are often dominated by defects, but precise control of these defects provides new insight into the electronic structure, photocarrier transport, and photoelectrochemical function.

scholarly journals Electronic Structure, Optoelectronic Properties, and Photoelectrochemical Characteristics of γ-Cu3V2O8 Thin Films

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Vol 29 (7) ◽  
pp. 3334-3345 ◽  
Author(s):  
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Maryam Farmand ◽  
Cheng Hao Wu ◽  
Yi-Sheng Liu ◽  
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Electronic structure and optoelectronic properties of strained InAsSb∕GaSb multiple quantum wells

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Vol 87 (18) ◽  
pp. 181911 ◽  
Author(s):  
Thomas Koprucki ◽  
Michael Baro ◽  
Uwe Bandelow ◽  
Tran Q. Tien ◽  
Fritz Weik ◽  
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Quantum Wells ◽  
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The magical photoelectric and optoelectronic properties of graphene nanoribbons and their applications

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Wang Li ◽  
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Graphene nanoribbons (GNRs) are quasi-one-dimensional graphene nanostructures. Due to quantum confinement and boundary effects, the electronic structure of GNRs is closely related to the width and edge structure. In recent...

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