Evidence for the existence of a metal-insulator-semiconductor junction at the electrode interfaces of CaCu3Ti4O12 thin film capacitors

2007 ◽  
Vol 91 (20) ◽  
pp. 202903 ◽  
Author(s):  
Guochu Deng ◽  
Tomoaki Yamada ◽  
Paul Muralt
Keyword(s):  
Thin Film ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Thin Film Capacitors ◽  
Semiconductor Junction

Electrical characteristics and photolytic tuning of poly(3-hexylthiophene) thin film metal–insulator–semiconductor field-effect transistors (MISFETs)

1992 ◽  
Vol 70 (10-11) ◽  
pp. 1171-1177 ◽  
Author(s):  
Z. Xie ◽  
M. S. A. Abdou ◽  
X. Lu ◽  
M. J. Deen ◽  
S. Holdcroft
Keyword(s):  
Thin Film ◽  
Electrical Transport ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Electrical Characteristics ◽  
Current Component ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Photolytic Degradation ◽  
In Series

In this paper, we present results on the electrical characteristics of both thick and thin film polymer metal–insulator–semiconductor field-effect transistors (MISFETs) based on poly(3-hexylthiophene) semiconducting substrate. These MISFETs were fabricated in eight steps using conventional semiconductor processing technology. The MISFETs had excellent current–voltage characteristics and showed little degradation with time. Electrical parameters of threshold voltage, mobility, and transconductance were − 1 V, 10−4–10−5 cm2 V−1 s−1, and 10−9 S, respectively. These values are typical of π-conjugated polymer-based MISFETs. Electrical transport in MISFETs were by both bulk (or resistive) and FET-like mechanisms in the thick film transistors. The resistive current component and the electrical characteristics were found to be tunable by photolytic degradation of the semiconducting polymer. In this process, the semiconducting π-conjugated regions were spatially converted to insulating regions by novel photo-oxidative chemistry. We were also successful in modelling the MISFETs as an intrinsic FET with parasitic source and drain resistances in series with it and a varistor (for the bulk current component) in parallel with the intrinsic FET. Using this circuit model, we obtained very good agreements between SPICE simulations and the experimental results.

Efficient Field Effect in Heavily Doped Thin-Film Diamond Metal-Insulator-Semiconductor Diode Employing $\bf BaTiO_{3}$ Insulator Film

1994 ◽  
Vol 33 (Part 2, No. 6B) ◽  
pp. L888-L891 ◽  
Author(s):  
Takuya Ariki ◽  
Shozo Shikama ◽  
Sei Suzuki ◽  
Yuzuru Otsuka ◽  
Tetsuro Maki ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
Semiconductor Diode ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Insulator Film ◽  
Heavily Doped

scholarly journals Scalable, highly stable Si-based metal-insulator-semiconductor photoanodes for water oxidation fabricated using thin-film reactions and electrodeposition

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Soonil Lee ◽  
Li Ji ◽  
Alex C. De Palma ◽  
Edward T. Yu
Keyword(s):  
Thin Film ◽  
Current Density ◽  
Water Oxidation ◽  
Metal Catalyst ◽  
Saturation Current ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Onset Potential ◽  
Solar Water Splitting ◽  
Saturation Current Density

AbstractMetal-insulator-semiconductor (MIS) structures are widely used in Si-based solar water-splitting photoelectrodes to protect the Si layer from corrosion. Typically, there is a tradeoff between efficiency and stability when optimizing insulator thickness. Moreover, lithographic patterning is often required for fabricating MIS photoelectrodes. In this study, we demonstrate improved Si-based MIS photoanodes with thick insulating layers fabricated using thin-film reactions to create localized conduction paths through the insulator and electrodeposition to form metal catalyst islands. These fabrication approaches are low-cost and highly scalable, and yield MIS photoanodes with low onset potential, high saturation current density, and excellent stability. By combining this approach with a p+n-Si buried junction, further improved oxygen evolution reaction (OER) performance is achieved with an onset potential of 0.7 V versus reversible hydrogen electrode (RHE) and saturation current density of 32 mA/cm2 under simulated AM1.5G illumination. Moreover, in stability testing in 1 M KOH aqueous solution, a constant photocurrent density of ~22 mA/cm2 is maintained at 1.3 V versus RHE for 7 days.

Thin‐film palladium and silver alloys and layers for metal‐insulator‐semiconductor sensors

1987 ◽  
Vol 62 (3) ◽  
pp. 1074-1083 ◽  
Author(s):  
R. C. Hughes ◽  
W. K. Schubert ◽  
T. E. Zipperian ◽  
J. L. Rodriguez ◽  
T. A. Plut
Keyword(s):  
Thin Film ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Silver Alloys ◽  
Semiconductor Sensors

Impacts of Cu/TaN Electrode on the Electrical Properties of Metal-insulator-metal (Ba,Sr)TiO3 Thin-film Capacitors

2007 ◽  
Author(s):  
Wen-Fa Wu ◽  
Kou-Chiang Tsai ◽  
Chuen-Guang Chao ◽  
Jain-Tsai Lee ◽  
Wei-Che Chang ◽  
...  
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Tio3 Thin Film ◽  
Metal Insulator ◽  
Thin Film Capacitors ◽  
Metal Insulator Metal

scholarly journals Electrical response of highly ordered organic thin film metal-insulator-semiconductor devices

2009 ◽  
Vol 106 (11) ◽  
pp. 114505 ◽  
Author(s):  
Mujeeb Ullah ◽  
D. M. Taylor ◽  
R. Schwödiauer ◽  
H. Sitter ◽  
S. Bauer ◽  
...  
Keyword(s):  
Thin Film ◽  
Electrical Response ◽  
Semiconductor Devices ◽  
Organic Thin Film ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor
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