Microstructure analysis of epitaxially grown self-assembled Ge islands on nanometer-scale patterned SiO2∕Si substrates by high-resolution transmission electron microscopy

2007 ◽  
Vol 102 (10) ◽  
pp. 104306 ◽  
Author(s):  
Tae-Sik Yoon ◽  
Hyun-Mi Kim ◽  
Ki-Bum Kim ◽  
Du Yeol Ryu ◽  
Thomas P. Russell ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Microstructure Analysis ◽  
Nanometer Scale ◽  
Si Substrates ◽  
Transmission Electron ◽  
Self Assembled

Epitaxial Growth of SrTiO3 Thin Films on TiN/Si Substrates Using RF Sputtering

2006 ◽  
Vol 966 ◽  
Author(s):  
Chun Wang ◽  
Mark H Kryder
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Electron Diffraction ◽  
Electron Diffraction Pattern ◽  
Rf Sputtering ◽  
Epitaxial Relationship ◽  
Si Substrates ◽  
Transmission Electron

ABSTRACTEpitaxial SrTiO3 (001) thin films with a TiN template layer have been deposited on Si(001) single crystal substrates by RF sputtering. The deposited SrTiO3 films show a surface with roughness of 0.66nm. The orientation relationship was determined to be SrTiO3(001)[110]∥TiN(001)[110]∥Si(001)[110]. The microstructure and interface of the multilayer was studied using high resolution transmission electron microscopy (TEM). The electron diffraction pattern confirmed the epitaxial relationship between each layer.

Tyrosine Derivative of Aminoacid Produced Bio Inspired Nanotubes and NanovesiclesSynthesis and Characterization

2020 ◽  
Vol 12 (6) ◽  
pp. 853-857
Author(s):  
Raman Govindhan ◽  
Balakrishnan Karthikeyan ◽  
Aswini Kumar Giri ◽  
Victor J. Hruby
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Theoretical Calculations ◽  
Microscopic Analysis ◽  
Peptide Nanotubes ◽  
Transmission Electron ◽  
Key Factor ◽  
Dft Simulations ◽  
Self Assembled

3,5-bis(trifluoromethyl)benzylamine derivative of tyrosine single aminoacids have produced self-assembled peptide nanotubes and nanovesicles (BTTPNTs) depending on the concentration of the monomer study through optical and microscopic analysis. DFT simulations were carried out for a system of BTTPNTs and nanovesicles which also experimentally characterized by high resolution transmission electron microscopy (HR-TEM) and ultraviolet-visible (UV-Vis) absorbance. These results are used to examine the morphologies, size of the nanostructure and study its recognition of aminoacid motif is discussed. However, the length of the nanotubes gets larger with the increases of concentration. UV-Vis spectra clearly showed slight decrease in the intensity in absorption after the formation of nanotubes and nanovesicles. Theoretical calculations indicate that H-bonding is the key factor in making ring while other interactions including Van der Walls force, π–π stacking plays role to making self-assembled nanotubes and vesicles.

A High Resolution Study of G.P. Zones in Aluminum - 4.2 at % Silver

1982 ◽  
Vol 40 ◽  
pp. 722-723 ◽  
Author(s):  
R. Gronsky
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Computer Simulations ◽  
Structural Characteristics ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Resolution Study

The phenomenon of clustering in Al-Ag alloys has been extensively studied since the early work of Guinierl, wherein the pre-precipitation state was characterized as an assembly of spherical, ordered, silver-rich G.P. zones. Subsequent x-ray and TEM investigations yielded results in general agreement with this model. However, serious discrepancies were later revealed by the detailed x-ray diffraction - based computer simulations of Gragg and Cohen, i.e., the silver-rich clusters were instead octahedral in shape and fully disordered, atleast below 170°C. The object of the present investigation is to examine directly the structural characteristics of G.P. zones in Al-Ag by high resolution transmission electron microscopy.

Transmission Electron Microscopy characterization of epitaxial III-V semiconductor thin films grown on Si(100) by ion-assisted deposition

1990 ◽  
Vol 48 (4) ◽  
pp. 686-687
Author(s):  
L. Hultman ◽  
C.-H. Choi ◽  
R. Kaspi ◽  
R. Ai ◽  
S.A. Barnett
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ion Irradiation ◽  
High Energy ◽  
Nucleation Mechanism ◽  
Layer By Layer ◽  
Extended Defect ◽  
Island Formation ◽  
Si Substrates ◽  
Transmission Electron

III-V semiconductor films nucleate by the Stranski-Krastanov (SK) mechanism on Si substrates. Many of the extended defects present in the films are believed to result from the island formation and coalescence stage of SK growth. We have recently shown that low (-30 eV) energy, high flux (4 ions per deposited atom), Ar ion irradiation during nucleation of III-V semiconductors on Si substrates prolongs the 1ayer-by-layer stage of SK nucleation, leading to a decrease in extended defect densities. Furthermore, the epitaxial temperature was reduced by >100°C due to ion irradiation. The effect of ion bombardment on the nucleation mechanism was explained as being due to ion-induced dissociation of three-dimensional islands and ion-enhanced surface diffusion.For the case of InAs grown at 380°C on Si(100) (11% lattice mismatch), where island formation is expected after ≤ 1 monolayer (ML) during molecular beam epitaxy (MBE), in-situ reflection high-energy electron diffraction (RHEED) showed that 28 eV Ar ion irradiation prolonged the layer-by-layer stage of SK nucleation up to 10 ML. Otherion energies maintained layer-by-layer growth to lesser thicknesses. The ion-induced change in nucleation mechanism resulted in smoother surfaces and improved the crystalline perfection of thicker films as shown by transmission electron microscopy and X-ray rocking curve studies.

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