Valence-band mixing effects in the exciton capture and escape in quantum-well structures

2007 ◽  
Vol 102 (9) ◽  
pp. 093716
Author(s):  
Y. Chen ◽  
S. M. Sadeghi ◽  
W. P. Huang
Keyword(s):  
Quantum Well ◽  
Valence Band ◽  
Quantum Well Structures ◽  
Mixing Effects ◽  
Band Mixing ◽  
Valence Band Mixing

Valence-band mixing effects on hole oscillations in coupled quantum wells

1993 ◽  
Vol 47 (8) ◽  
pp. 4563-4568 ◽  
Author(s):  
C. Juang ◽  
P. A. Chen ◽  
C. Y. Chang
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Coupled Quantum Wells ◽  
Mixing Effects ◽  
Band Mixing ◽  
Valence Band Mixing

Direct Observation of Valence-Band Mixing in GaAs/GaPAs Strained-Layer Superlattices

1986 ◽  
Vol 77 ◽  
Author(s):  
E. D. Jones ◽  
R. M. Biefeld ◽  
I. J. Fritz ◽  
P. L. Gourley ◽  
G. C. Osbourn ◽  
...  
Keyword(s):  
Valence Band ◽  
Direct Observation ◽  
Experimental Studies ◽  
Biaxial Compression ◽  
Strained Layer ◽  
Mixing Effects ◽  
Strained Layer Superlattice ◽  
Band Mixing ◽  
Valence Bands ◽  
Valence Band Mixing

ABSTRACTLow-temperature magneto-luminescence studies are used to examine the in-plane valence-band dispersion in GaAs/GaPAs strained-layer-superlattice structures. The results provide a direct observation of valence-band mixing effects in strained-layer systems.Theoretical and experimental studies of the effect of valence-band mixing upon the magneto-transport properties and magneto-luminescence data for GaAs/AlGaAs latticed-matched superlattices have been recently reported.[1–] Due to the presence of the 2D-quantum well, the valence-band degeneracy between the light-hole and heavy-hole bands at is removed. These studies show, however, that the lowest energy valence-band mass is still strongly dependent upon due to valence-band mixing. On the other hand, because of the large biaxial compression in strained-layer-super lattices (SLS), valence-band mixing effects should be minimal.[8–9] Recent magneto-transport measurements[10] on p-type InGaAs/GaAs SLS structures have provided information regarding nonparabolic valence-bands in these structures.

Theoretical gain in strained InGaAs/AlGaAs quantum wells including valence‐band mixing effects

1990 ◽  
Vol 57 (26) ◽  
pp. 2835-2837 ◽  
Author(s):  
S. W. Corzine ◽  
R. H. Yan ◽  
L. A. Coldren
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Mixing Effects ◽  
Band Mixing ◽  
Valence Band Mixing
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