Growth front nucleation of rubrene thin films for high mobility organic transistors

2007 ◽  
Vol 91 (19) ◽  
pp. 193505 ◽  
Author(s):  
C. H. Hsu ◽  
J. Deng ◽  
C. R. Staddon ◽  
P. H. Beton
Keyword(s):  
Thin Films ◽  
High Mobility ◽  
Growth Front ◽  
Organic Transistors

BTQBT (bis-(1, 2, 5-thiadiazolo)-p-quinobis(1, 3-dithiole)) Thin Films; A Promising Candidate for High Mobility Organic Transistors

2002 ◽  
Vol 41 (Part 2, No. 1A/B) ◽  
pp. L4-L6 ◽  
Author(s):  
Masaki Takada ◽  
Harald Graaf ◽  
Yoshiro Yamashita ◽  
Hirokazu Tada
Keyword(s):  
Thin Films ◽  
High Mobility ◽  
Organic Transistors ◽  
Promising Candidate

High-mobility amorphous PTB7 organic transistors enabled by high-capacitance electrolyte dielectric

2021 ◽  
Vol 119 (4) ◽  
pp. 042103
Author(s):  
Benjamin Nketia-Yawson ◽  
Ji Hyeon Lee ◽  
Jea Woong Jo
Keyword(s):  
High Mobility ◽  
Organic Transistors ◽  
High Capacitance

CMOS-Compatible Synthesis of Large-Area, High-Mobility Graphene by Chemical Vapor Deposition of Acetylene on Cobalt Thin Films

ACS Nano ◽  
2011 ◽  
Vol 5 (9) ◽  
pp. 7198-7204 ◽  
Author(s):  
Michael E. Ramón ◽  
Aparna Gupta ◽  
Chris Corbet ◽  
Domingo A. Ferrer ◽  
Hema C. P. Movva ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Mobility ◽  
Chemical Vapor ◽  
Large Area ◽  
Cobalt Thin Films ◽  
Cmos Compatible

High-mobility InSb thin films on GaAs (001) substrate grown by the two-step growth process

2004 ◽  
Vol 267 (1-2) ◽  
pp. 17-21 ◽  
Author(s):  
M.C. Debnath ◽  
T. Zhang ◽  
C. Roberts ◽  
L.F. Cohen ◽  
R.A. Stradling
Keyword(s):  
Thin Films ◽  
Growth Process ◽  
High Mobility ◽  
Insb Thin Films ◽  
Step Growth

The Interfacial Diffusion Zone in Magnetron Sputtered Ni-Ti Thin Films Deposited on Different Si Substrates Studied by HR-TEM

2008 ◽  
Vol 587-588 ◽  
pp. 820-823 ◽  
Author(s):  
Rui M.S. Martins ◽  
Manfred Beckers ◽  
A. Mücklich ◽  
Norbert Schell ◽  
Rui Jorge C. Silva ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Front ◽  
Interfacial Structure ◽  
Interfacial Diffusion ◽  
Tem Analysis ◽  
Si Substrates ◽  
Microelectromechanical Devices ◽  
Preferential Diffusion ◽  
High Resolution Tem ◽  
Columnar Grains

Ni-Ti Shape Memory Alloy thin films are suitable materials for microelectromechanical devices. During the deposition of Ni-Ti thin films on Si substrates, there exist interfacial diffusion and chemical interactions at the interface due to the high temperature processing necessary to crystallize the film. For the present study, Ni-Ti thin films were prepared by magnetron cosputtering from Ni-Ti and Ti targets in a specially designed chamber mounted on the 6-circle goniometer of the ROssendorf BeamLine (ROBL-CRG) at ESRF, Grenoble (France). The objective of this study has been to investigate the interfacial structure resulting from depositions (at a temperature of ≈ 470°C) on different substrates: naturally oxidized Si(100), Si(111) and poly-Si substrates. A detailed High-Resolution TEM analysis of the interfacial structure has been performed. When Ni-Ti is deposited on Si(100) substrate, a considerable diffusion of Ni into the substrate takes place, resulting in the growth of semi-octaeder A-NiSi2 silicide. In the case of Ni-Ti deposited on Si(111), there appears an uniform thickness plate, due to the alignment between substrate orientation and the [111]-growth front. For Ni-Ti deposited on poly-Si, the diffusion is inhomogeneous. Preferential diffusion is found along the columnar grains of poly-Si, which are favourably aligned for Ni diffusion. These results show that for the Ni-Ti/Si system, the morphology of the diffusion interface is strongly dependent on the type of substrates.

scholarly journals Nonthermal Crystalline Forming of Ceramic Nanoparticles by Non-Equilibrium Excitation Reaction Field of Electron

2021 ◽  
Author(s):  
Norihiro Shimoi
Keyword(s):  
Thin Films ◽  
Film Formation ◽  
High Mobility ◽  
Zno Thin Films ◽  
Reaction Field ◽  
Wet Process ◽  
Interface Control ◽  
Zno Particles ◽  
Pet Film ◽  
Non Equilibrium

In this work, we have discovered a method of forming ZnO thin films with high mobility, high carrier density and low resistivity on plastic (PET) films using non-equilibrium reaction fields, even when the films are deposited without heating, and we have also found a thin film formation technique using a wet process that is different from conventional deposition techniques. The field emission electron-beam irradiation treatment energetically activates the surface of ZnO particles and decomposes each ZnO particles. The energy transfer between zinc ions and ZnO surface and the oxygen present in the atmosphere around the ZnO particles induce the oxidation of zinc. In addition, the ZnO thin films obtained in this study successfully possess high functional thin films with high electrical properties, including high hole mobility of 208.6 cm2/Vs, despite being on PET film substrates. These results contribute to the discovery of a mechanism to create highly functional oxide thin films using a simple two-dimensional process without any heat treatment on the substrate or during film deposition. In addition, we have elucidated the interfacial phenomena and crosslinking mechanisms that occur during the bonding of metal oxide particles, and understood the interfacial physical properties and their effects on the electronic structure. and surface/interface control, and control of higher-order functional properties in metal/ceramics/semiconductor composites, and contribute to the provision of next-generation nanodevice components in a broad sense.

High-Mobility Organic Transistors Based on Single-Crystalline Microribbons of Triisopropylsilylethynyl Pentacene via Solution-Phase Self-Assembly

2007 ◽  
Vol 19 (5) ◽  
pp. 678-682 ◽  
Author(s):  
D. H. Kim ◽  
D. Y. Lee ◽  
H. S. Lee ◽  
W. H. Lee ◽  
Y. H. Kim ◽  
...  
Keyword(s):  
Self Assembly ◽  
High Mobility ◽  
Solution Phase ◽  
Organic Transistors ◽  
Single Crystalline

scholarly journals Epitaxial integration of high-mobility La-doped BaSnO3 thin films with silicon

APL Materials ◽  
2019 ◽  
Vol 7 (2) ◽  
pp. 022520 ◽  
Author(s):  
Zhe Wang ◽  
Hanjong Paik ◽  
Zhen Chen ◽  
David A. Muller ◽  
Darrell G. Schlom
Keyword(s):  
Thin Films ◽  
High Mobility ◽  
La Doped
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