High current multicharged metal ion source using high power gyrotron heating of vacuum arc plasma

2008 ◽  
Vol 79 (2) ◽  
pp. 02B304 ◽  
Author(s):  
A. V. Vodopyanov ◽  
S. V. Golubev ◽  
V. I. Khizhnyak ◽  
D. A. Mansfeld ◽  
A. G. Nikolaev ◽  
...  
Keyword(s):  
High Power ◽  
Metal Ion ◽  
Ion Source ◽  
Vacuum Arc ◽  
Arc Plasma ◽  
High Current

scholarly journals Ion Beam Modification of the Y-Ba-Cu-O System with the Mevva High Current Metal Ion Source

1989 ◽  
Vol 147 ◽  
Author(s):  
I. G. Brown ◽  
M. D. Rubin ◽  
K. M. Yu ◽  
R. Mutikainen ◽  
N. W. Cheung
Keyword(s):  
Ion Implantation ◽  
Metal Ion ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Rf Sputtering ◽  
Ion Source ◽  
Vacuum Arc ◽  
High Dose ◽  
High Current ◽  
Ion Beam Modification

AbstractWe have used high-dose metal ion implantation to ‘fine tune’ the composition of Y-Ba- Cu-O thin films. The films were prepared by either of two rf sputtering systems. One system uses three modified Varian S-guns capable of sputtering various metal powder targets; the other uses reactive rf magnetron sputtering from a single mixed-oxide stoichiometric solid target. Film thickness was typically in the range 2000–5000 A. Substrates of magnesium oxide, zirconia-buffered silicon, and strontium titanate have been used. Ion implantation was carried out using a metal vapor vacuum arc (MEVVA) high current metal ion source. Beam energy was 100–200 keV, average beam current about 1 mA, and dose up to about 1017 ions/cm2. Samples were annealed at 800 – 900°C in wet oxygen. Film composition was determined using Rutherford Backscattering Spectrometry (RBS), and the resistivity versus temperature curves were obtained using a four-point probe method. We find that the zero-resistance temperature can be greatly increased after implantation and reannealing, and that the ion beam modification technique described here provides a powerful means for optimizing the thin film superconducting properties.

Formation of Buried Iridium Silicide Layer in Silicon by High Dose Iridium Ion Implantation

1989 ◽  
Vol 147 ◽  
Author(s):  
K. M. Yu ◽  
B. Katz ◽  
I. C. Wu ◽  
I. G. Brown
Keyword(s):  
Ion Implantation ◽  
Metal Ion ◽  
Room Temperature ◽  
Metal Vapor ◽  
Ion Source ◽  
Vacuum Arc ◽  
High Dose ◽  
High Current ◽  
Interface Morphology ◽  
Silicide Layer

AbstractWe have investigated the formation of IrSi3 layers buried in <111> silicon. The layers are formed by iridium ion implantation using a metal vapor vacuum arc (MEVVA) high current metal ion source at room temperature with average beam energy = 130 keV. Doses of the Ir ions ranging from 2×1016 to 1.5×1017/cm2 were implanted into <111> Si. The formation of IrSi3 phase is realized after annealing at temperatures as low as 500°C. A continuous IrSi3 layer of =200 Å thick buried under =400 Å Si was achieved with samples implanted with doses not less than 3.5×1016/cm2. Implantated doses above 8×1016/cm2 resulted in the formation of an IrSi3 layer on the surface due to excessive sputtering of Si by the TI ions. The effects of implant dose on phase formation, interface morphology and implanted atom redistribution are discussed. Radiation damage and regrowth of Si due to the implantation process was also studied.

Vacuum Arc Plasma Guns and Ion Sources

2005 ◽  
Vol 107 ◽  
pp. 63-68
Author(s):  
Ian G. Brown
Keyword(s):  
Plasma Deposition ◽  
Ion Source ◽  
Ion Sources ◽  
Particle Accelerator ◽  
Vacuum Arc ◽  
Arc Plasma ◽  
High Current ◽  
Plasma Gun ◽  
Metal Plasma ◽  
Plasma Guns

Vacuum arc plasma can be formed using particularly uncomplicated hardware, providing a means for laboratory scale formation of dense and highly-ionized metal plasma. The simplicity and versatility of the approach has led to its widespread use in recent times for both fundamental and technological applications. When embodied in a plasma gun configuration, the source can provide a valuable tool for plasma deposition of metal and metal-containing thin films, including in plasma immersion configurations. When embodied in an ion source configuration, high current beams of metal ions can be formed, and such beams have found good use for ion implantation and particle accelerator injection. Here we briefly review vacuum arc plasma guns and ion sources, outlining some of the hardware embodiments that have been developed at Berkeley and used for various materials modification applications.

Performance of a high‐current metal vapor vacuum arc ion source

1990 ◽  
Vol 61 (12) ◽  
pp. 3775-3782 ◽  
Author(s):  
Hiroshi Shiraishi ◽  
Ian G. Brown
Keyword(s):  
Metal Vapor ◽  
Ion Source ◽  
Vacuum Arc ◽  
High Current

Surface Modification of Electromagnetic Railgun Components

1993 ◽  
Vol 316 ◽  
Author(s):  
M. A. Otooni ◽  
A. Graf ◽  
C. Dunham ◽  
Ian Brown ◽  
Xiang Yao
Keyword(s):  
Electron Microscopy ◽  
Metal Ion ◽  
High Energy ◽  
Ion Source ◽  
Vacuum Arc ◽  
Sufficient Evidence ◽  
Wear Properties ◽  
Implantation Energy ◽  
Rutherford Back Scattering ◽  
Spark Erosion

ABSTRACTCopper and aluminum used for rail and armature materials in electromagnetic railgun systems undergo severe degradation during the EM gun operation. The extent of this degradation is especially severe in guns operated at high energy levels or designed for repeated firings. In an effort to improve surface properties of the copper rail, armature, and sabot materials, the technique of metal ion implantation using a vacuum arc ion source has been employed. Preliminary tests have been conducted to identify the best implant species to improve spark erosion resistance, scratch resistance and hardness. The implanted species included Al, Ti, Cr, Ni, Ta, Ag, and W. The implantation energy range and dose varied between 100–180 KeV and 0.4 to 2 × 1017 cm-2, respectively . Several analytical techniques were also used to assess the effect of implanted species. These included Rutherford Back Scattering (RBS), Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM), Microhardness Measurements, Spark Erosion and Scratch Testing. It has been tentatively concluded that Ta and Ni implantation of the copper rail substantially improve wear and inhibit arc erosion. There is also sufficient evidence to indicate that implantation of the aluminum armature with Cr and Ta, involving two stages of implantation, will also improve its mechanical and wear properties.

The 100‐kV gas and metal ion source for high current ion implantation

1992 ◽  
Vol 63 (4) ◽  
pp. 2422-2424 ◽  
Author(s):  
S. P. Bugaev ◽  
A. G. Nikolaev ◽  
E. M. Oks ◽  
P. M. Schanin ◽  
G. Yu. Yushkov
Keyword(s):  
Ion Implantation ◽  
Metal Ion ◽  
Ion Source ◽  
High Current

Modeling and simulation of the influence of contact structure on the characteristics of high current vacuum arc plasma

2020 ◽  
Vol 27 (8) ◽  
pp. 083510
Author(s):  
Lihua Zhao ◽  
Haiyi Zhu ◽  
Hangyuan Gou ◽  
Junwen Ren ◽  
Zhong Wang ◽  
...  
Keyword(s):  
Modeling And Simulation ◽  
Contact Structure ◽  
Vacuum Arc ◽  
Arc Plasma ◽  
High Current

High current liquid metal ion source using porous tungsten multiemitters

2010 ◽  
Vol 111 (1) ◽  
pp. 1-4 ◽  
Author(s):  
M. Tajmar ◽  
I. Vasiljevich ◽  
W. Grienauer
Keyword(s):  
Liquid Metal ◽  
Metal Ion ◽  
Ion Source ◽  
High Current ◽  
Porous Tungsten

Pattern Evolution of NiSi2 on Si Surface upon High Current Pulsed Ni Ion Implantation

2000 ◽  
Vol 648 ◽  
Author(s):  
X.Q. Cheng ◽  
H.N. Zhu ◽  
B.X. Liu
Keyword(s):  
Ion Implantation ◽  
Ion Beam ◽  
Fractal Dimensions ◽  
Metal Vapor ◽  
Ion Source ◽  
Vacuum Arc ◽  
High Current ◽  
Si Substrate ◽  
Kinetics Of ◽  
Si Wafer

AbstractFractal pattern evolution of NiSi2 grains on a Si surface was induced by high current pulsed Ni ion implantation into Si wafer using metal vapor vacuum arc ion source. The fractal dimension of the patterns was found to correlate with the temperature rise of the Si substrate caused by the implanting Ni ion beam. With increasing of the substrate temperature, the fractal dimensions were determined to increase from less than 1.64, to beyond the percolation threshold of 1.88, and eventually up to 2.0, corresponding to a uniform layer with fine NiSi2 grains. The growth kinetics of the observed surface fractals was also discussed in terms of a special launching mechanism of the pulsed Ni ion beam into the Si substrate.

Ion species measurement of high current metal ion beams extracted from a multicusp ion source

1992 ◽  
Vol 63 (4) ◽  
pp. 2481-2483 ◽  
Author(s):  
Yasuhiro Matsuda ◽  
Hiroshi Inami ◽  
Takatoshi Yamashita ◽  
Shuichi Fujiwara ◽  
Yutaka Inouchi ◽  
...  
Keyword(s):  
Metal Ion ◽  
Ion Beams ◽  
Ion Source ◽  
High Current ◽  
Multicusp Ion Source ◽  
Ion Species
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