A photon detector with very high gain at low bias and at room temperature

2007 ◽  
Vol 91 (17) ◽  
pp. 171112 ◽  
Author(s):  
Omer Gokalp Memis ◽  
Alex Katsnelson ◽  
Soon-Cheol Kong ◽  
Hooman Mohseni ◽  
Minjun Yan ◽  
...  
Keyword(s):  
Room Temperature ◽  
High Gain ◽  
Photon Detector ◽  
Very High

Dislocation structures around SiO2 Particles in aged Cu-Cr-SiO2

1978 ◽  
Vol 36 (1) ◽  
pp. 594-595
Author(s):  
N.J. Long ◽  
M.H. Loretto ◽  
C.H. Lloyd
Keyword(s):  
Flow Stress ◽  
Single Crystals ◽  
Room Temperature ◽  
Thin Foil ◽  
Age Hardening ◽  
Dispersion Strengthening ◽  
Accurate Picture ◽  
The Matrix ◽  
Very High ◽  
Good Agreement

IntroductionThere have been several t.e.m. studies (1,2,3,4) of the dislocation arrangements in the matrix and around the particles in dispersion strengthened single crystals deformed in single slip. Good agreement has been obtained in general between the observed structures and the various theories for the flow stress and work hardening of this class of alloy. There has been though some difficulty in obtaining an accurate picture of these arrangements in the case when the obstacles are large (of the order of several 1000's Å). This is due to both the physical loss of dislocations from the thin foil in its preparation and to rearrangement of the structure on unloading and standing at room temperature under the influence of the very high localised stresses in the vicinity of the particles (2,3).This contribution presents part of a study of the Cu-Cr-SiO2 system where age hardening from the Cu-Cr and dispersion strengthening from Cu-Sio2 is combined.

Equivalent Noise Dose Obtained Through Hearing Aids in the Classrooms of Hearing-Impaired Children

1990 ◽  
Vol 21 (3) ◽  
pp. 147-150
Author(s):  
Ronald A. Wilde
Keyword(s):  
Hearing Aids ◽  
High Gain ◽  
Hearing Impaired ◽  
Deaf Children ◽  
Impaired Children ◽  
Very High ◽  
Hearing Impaired Children

A commercial noise dose meter was used to estimate the equivalent noise dose received through high-gain hearing aids worn in a school for deaf children. There were no significant differences among nominal SSPL settings and all SSPL settings produced very high equivalent noise doses, although these are within the parameters of previous projections.

A Low-Noise, High-Gain Quasi-Millimeter-Wave Receiver MMIC with a Very High Degree of Integration Using 3D-MMIC Technology

2011 ◽  
Vol E94-C (10) ◽  
pp. 1548-1556 ◽  
Author(s):  
Takana KAHO ◽  
Yo YAMAGUCHI ◽  
Kazuhiro UEHARA ◽  
Kiyomichi ARAKI
Keyword(s):  
Millimeter Wave ◽  
High Gain ◽  
Low Noise ◽  
High Degree ◽  
Very High ◽  
Millimeter Wave Receiver

Molecule-Based Magnets—An Overview

MRS Bulletin ◽  
2000 ◽  
Vol 25 (11) ◽  
pp. 21-30 ◽  
Author(s):  
Joel S. Miller ◽  
Arthur J. Epstein
Keyword(s):  
Low Temperature ◽  
Vapor Deposition ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Magnetic Ordering ◽  
Low Density ◽  
Materials Properties ◽  
The Common ◽  
New Processing ◽  
Very High

Molecule-based magnets are a broad, emerging class of magnetic materials that expand the materials properties typically associated with magnets to include low density, transparency, electrical insulation, and low-temperature fabrication, as well as combine magnetic ordering with other properties such as photoresponsiveness. Essentially all of the common magnetic phenomena associated with conventional transition-metal and rare-earth-based magnets can be found in molecule-based magnets. Although discovered less than two decades ago, magnets with ordering temperatures exceeding room temperature, very high (∼27.0 kOe or 2.16 MA/m) and very low (several Oe or less) coercivities, and substantial remanent and saturation magnetizations have been achieved. In addition, exotic phenomena including photoresponsiveness have been reported. The advent of molecule-based magnets offers new processing opportunities. For example, thin-film magnets can be prepared by means of low-temperature chemical vapor deposition and electrodeposition methods.

ION CHANNELING AND PIXE STUDIES OF S IMPLANTATION IN GaAs

1992 ◽  
Vol 02 (02) ◽  
pp. 151-159
Author(s):  
LIU SHIJIE ◽  
WANG JIANG ◽  
HU ZAOHUEI ◽  
XIA ZHONGHUONG ◽  
GAO ZHIGIANG ◽  
...  
Keyword(s):  
Room Temperature ◽  
Dislocation Loops ◽  
Good Recovery ◽  
Electrical Measurements ◽  
X Ray ◽  
Defect Complexes ◽  
Ion Channeling ◽  
Transmission Electron ◽  
Activation Efficiency ◽  
Very High

GaAs (100) crystals were implanted with 100 keV S+ to a dose of 3×1015 cm−2 in a nonchanneling direction at room temperature, and treated with rapid thermal annealing (RTA). He+ Rutherford backscattering and particle-induced X-ray emission in channeling mode in combination with transmission electron microscopy (TEM) were used to study the damage and the lattice location of S atoms. It is revealed that the RTA at 950 °C for 10 sec has resulted in a very good recovery of crystallinity with a few residual defects in the form of dislocation loops, and a very high substitutionality (~90%). The activation efficiency and the Hall mobility of the implanted samples are found to be low after the electrical measurements. Based on these results an extended dopant diffusion effect for the residual defects and a correlation between the electrical properties and defect complexes are suggested.

Very High Cycle Fatigue Behavior and Life Prediction of a Low Strength Weld Metal at Moderate Temperature

2011 ◽  
Author(s):  
Ming-Liang Zhu ◽  
Fu-Zhen Xuan ◽  
Zhengdong Wang
Keyword(s):  
Crack Initiation ◽  
Weld Metal ◽  
Room Temperature ◽  
Fatigue Behavior ◽  
Fatigue Properties ◽  
Dissimilar Welding ◽  
Initiation Mechanism ◽  
Metallic Inclusions ◽  
Low Strength ◽  
Very High

The fatigue properties of a low strength weld metal in a dissimilar welding joint in high cycle and very high cycle regimes were investigated by fully reversed axial tests in air at room temperature and 370°C. A clear duplex S-N curve existed as a result of the transition of fatigue failure mode from surface-induced failure to internal-induced failure at 370°C, while the S-N curve was continuously decreased at room temperature. A new model was successfully proposed to predict fatigue life, and interpret the crack initiation modes transition from surface inclusion to interior inclusion. It was concluded that cracks were initiated by competition among non-metallic inclusions, welding pores and discontinuous microstructures in high cycle regime. While in the very high cycle regime, non-metallic inclusions were the dominant crack initiation mechanism which depended on stress level, inclusion size as well as inclusion depth.

Annealing Kinetics of Amorphous Silicon Alloy Solar Cells Made at Various Deposition Rates

2001 ◽  
Vol 664 ◽  
Author(s):  
Baojie Yana ◽  
Jeffrey Yanga ◽  
Kenneth Lord ◽  
Subhendu Guha
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
High Frequency ◽  
Room Temperature ◽  
Defect Density ◽  
Very High Frequency ◽  
Solar Cell Performance ◽  
Kinetics Of ◽  
Very High

ABSTRACTA systematic study has been made of the annealing kinetics of amorphous silicon (a-Si) alloy solar cells. The cells were deposited at various rates using H2 dilution with radio frequency (RF) and modified very high frequency (MVHF) glow discharge. In order to minimize the effect of annealing during light soaking, the solar cells were degraded under 30 suns at room temperature to quickly reach their saturated states. The samples were then annealed at an elevated temperature. The J-V characteristics were recorded as a function of annealing time. The correlation of solar cell performance and defect density in the intrinsic layer was obtained by computer simulation. Finally, the annealing activation energy distribution (Ea) was deduced by fitting the experimental data to a theoretical model. The results show that the RF low rate solar cell with high H2 dilution has the lowest Ea and the narrowest distribution, while the RF cell with no H2 dilution has the highest Ea and the broadest distribution. The MVHF cell made at 8Å/s withhigh H2 dilution shows a lower Ea and a narrower distribution than the RF cell made at 3 Å/s, despite the higher rate. We conclude that different annealing kinetics plays an important role in determining the stabilized performance of a-Si alloy solar cells.

Image-Converter Streak Cameras with very High Gain

1975 ◽  
pp. 136-143 ◽  
Author(s):  
C. Chancel ◽  
N. Fleurot ◽  
J. P. Gex
Keyword(s):  
High Gain ◽  
Image Converter ◽  
Very High
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