Film thickness dependence of electro-optic effects in epitaxial Ba0.7Sr0.3TiO3 thin films

2007 ◽  
Vol 102 (7) ◽  
pp. 074101 ◽  
Author(s):  
J. H. Qiu ◽  
Q. Jiang
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Thickness Dependence ◽  
Electro Optic

Film thickness dependence of electro-optic effect in epitaxial BaTiO3 thin films

2011 ◽  
Vol 151 (19) ◽  
pp. 1344-1348 ◽  
Author(s):  
J.H. Qiu ◽  
J.N. Ding ◽  
N.Y. Yuan ◽  
X.Q. Wang ◽  
Y. Zhou
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Thickness Dependence ◽  
Electro Optic

Thickness Dependence of Vortex Pinning in Epitaxial Tl-Ca-Ba-Cu-O Thin Films

1992 ◽  
Vol 275 ◽  
Author(s):  
E. L. Venturing ◽  
W. Y. Lee ◽  
B. Morosin ◽  
D. S. Ginley
Keyword(s):  
Thin Films ◽  
Critical Current Density ◽  
Film Thickness ◽  
Single Crystals ◽  
High Field ◽  
Vortex Pinning ◽  
Thickness Dependence ◽  
Superconducting Thin Films ◽  
High Current ◽  
Pronounced Increase

ABSTRACTThe critical current density inferred from magnetization hysteresis for epitaxial Tl2Ca2Ba2Cu3O10 films on LaAlO3 exhibits a pronounced increase with film thickness in the high-field, high-current regime. This thickness dependence does not extend to comparatively “thick” single crystals, however, suggesting that the grain boundaries play a major role in collective vortex pinning for Tl-based superconducting thin films.

The Investigations of Dielectric Properties of BaTiO3 Thin Films on Polycrystalline Pt Substrates by Rf Magnetron Sputtering

1996 ◽  
Vol 433 ◽  
Author(s):  
Jin Wook Jang ◽  
Woon Jo Cho ◽  
Taek Sang Hahn ◽  
Sang Sam Choi ◽  
Su Jin Chung
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Magnetron Sputtering ◽  
Film Thickness ◽  
Room Temperature ◽  
Strong Dependence ◽  
Hysteresis Loops ◽  
Rf Magnetron Sputtering ◽  
Thickness Dependence ◽  
Grain Sizes

AbstractThickness dependence of ferroelectric and structural properties of BaTiO3 thin films were investigated. Stoichiometric BaTiO3 thin films were prepared by off-axis rf magnetron sputtering on polycrystalline Pt substrates at 700°C. Film thickness range was 2,100–20,000Å. Room temperature permittivity, frequency dependence of permittivity, and D-E hysteresis loops were measured and lattice parameters were determined as a function of the film thickness. It has been found that these properties had the strong dependence on film thickness, which was mainly due to grain sizes of BaTiO3 thin films. The main cause of thickness dependence of dielectric properties was thought to be crystallinity and stresses of thin films which is resulted from changes in grain sizes.

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