High temperature power performance of AlGaN∕GaN high-electron-mobility transistors on high-resistivity silicon

2007 ◽  
Vol 91 (8) ◽  
pp. 083516 ◽  
Author(s):  
S. Arulkumaran ◽  
G. I. Ng ◽  
Z. H. Liu ◽  
C. H. Lee
Keyword(s):  
High Temperature ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Resistivity ◽  
High Electron ◽  
Power Performance ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
High Resistivity Silicon

Ultrahigh-Speed AlInN/GaN High Electron Mobility Transistors Grown on (111) High-Resistivity Silicon withFT= 143 GHz

2010 ◽  
Vol 3 (9) ◽  
pp. 094101 ◽  
Author(s):  
Haifeng Sun ◽  
Andreas R. Alt ◽  
Hansruedi Benedickter ◽  
C. R. Bolognesi ◽  
Eric Feltin ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Resistivity ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
High Resistivity Silicon

scholarly journals High Temperature Operation of Al0.45Ga0.55N/Al0.30Ga0.70N High Electron Mobility Transistors

2017 ◽  
Vol 6 (11) ◽  
pp. S3010-S3013 ◽  
Author(s):  
Albert G. Baca ◽  
Andrew M. Armstrong ◽  
Andrew A. Allerman ◽  
Brianna A. Klein ◽  
Erica A. Douglas ◽  
...  
Keyword(s):  
High Temperature ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
High Temperature Operation
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