Zn vacancy induced room-temperature ferromagnetism in Mn-doped ZnO

2007 ◽  
Vol 91 (6) ◽  
pp. 062113 ◽  
Author(s):  
Wensheng Yan ◽  
Zhihu Sun ◽  
Qinghua Liu ◽  
Zhongrui Li ◽  
Zhiyun Pan ◽  
...  
2010 ◽  
Vol 46 (6) ◽  
pp. 2152-2155 ◽  
Author(s):  
Yan Wu ◽  
K. V. Rao ◽  
Wolfgang Voit ◽  
Takahiko Tamaki ◽  
O. D. Jayakumar ◽  
...  

2015 ◽  
Vol 3 (45) ◽  
pp. 11953-11958 ◽  
Author(s):  
Yiren Wang ◽  
Jingyuan Piao ◽  
Guozhong Xing ◽  
Yunhao Lu ◽  
Zhimin Ao ◽  
...  

K doped ZnO shows room temperature ferromagnetism from both theoretical and experimental studies. This ferromagnetism is mainly attributed to the formation of the Zn vacancy. The K dopants can stabilize the Zn vacancy by forming a defect complex and K substitution can induce magnetism via lattice distortion.


RSC Advances ◽  
2016 ◽  
Vol 6 (109) ◽  
pp. 107865-107870 ◽  
Author(s):  
Sanjun Wang ◽  
Xiaobo Shi ◽  
Jinming Li

Our first-principles calculation finds that only the Zn vacancy can induce a 1.0 μB magnetic moment in Er-doped ZnO, which comes from the unpaired 2p electrons at the ligand O atom and results in the room-temperature ferromagnetism property of ZnO.


2009 ◽  
Vol 58 (8) ◽  
pp. 5763
Author(s):  
Zou Wen-Qin ◽  
Lu Zhong-Lin ◽  
Wang Shen ◽  
Liu Yuan ◽  
Lu Lu ◽  
...  

2012 ◽  
Vol 112 (5) ◽  
pp. 053708 ◽  
Author(s):  
Zheng Zuo ◽  
Huimei Zhou ◽  
Mario J. Olmedo ◽  
Jieying Kong ◽  
Ward P. Beyermann ◽  
...  

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