Zn vacancy induced ferromagnetism in K doped ZnO

2015 ◽  
Vol 3 (45) ◽  
pp. 11953-11958 ◽  
Author(s):  
Yiren Wang ◽  
Jingyuan Piao ◽  
Guozhong Xing ◽  
Yunhao Lu ◽  
Zhimin Ao ◽  
...  

K doped ZnO shows room temperature ferromagnetism from both theoretical and experimental studies. This ferromagnetism is mainly attributed to the formation of the Zn vacancy. The K dopants can stabilize the Zn vacancy by forming a defect complex and K substitution can induce magnetism via lattice distortion.

RSC Advances ◽  
2016 ◽  
Vol 6 (109) ◽  
pp. 107865-107870 ◽  
Author(s):  
Sanjun Wang ◽  
Xiaobo Shi ◽  
Jinming Li

Our first-principles calculation finds that only the Zn vacancy can induce a 1.0 μB magnetic moment in Er-doped ZnO, which comes from the unpaired 2p electrons at the ligand O atom and results in the room-temperature ferromagnetism property of ZnO.


2007 ◽  
Vol 91 (6) ◽  
pp. 062113 ◽  
Author(s):  
Wensheng Yan ◽  
Zhihu Sun ◽  
Qinghua Liu ◽  
Zhongrui Li ◽  
Zhiyun Pan ◽  
...  

2021 ◽  
Vol 529 ◽  
pp. 167908
Author(s):  
Cai-Qin Luo ◽  
Si-Cong Zhu ◽  
Chi Xu ◽  
Shengqiang Zhou ◽  
Chi-Hang Lam ◽  
...  

Nano Letters ◽  
2012 ◽  
Vol 12 (8) ◽  
pp. 3994-4000 ◽  
Author(s):  
Dandan Wang ◽  
Qian Chen ◽  
Guozhong Xing ◽  
Jiabao Yi ◽  
Saidur Rahman Bakaul ◽  
...  

2009 ◽  
Vol 60 (4) ◽  
pp. 214-217 ◽  
Author(s):  
L.J. Zhuge ◽  
X.M. Wu ◽  
Z.F. Wu ◽  
X.M. Chen ◽  
Y.D. Meng

2006 ◽  
Vol 18 (14) ◽  
pp. 1857-1860 ◽  
Author(s):  
O. D. Jayakumar ◽  
I. K. Gopalakrishnan ◽  
S. K. Kulshreshtha

2010 ◽  
Vol 97 (23) ◽  
pp. 232502 ◽  
Author(s):  
X. G. Xu ◽  
H. L. Yang ◽  
Y. Wu ◽  
D. L. Zhang ◽  
S. Z. Wu ◽  
...  

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