Improvement of charge storage characteristics on floating gated nonvolatile memory devices with In2O3 nanoparticles embedded polyimide gate insulator

2007 ◽  
Vol 91 (4) ◽  
pp. 043513 ◽  
Author(s):  
Hyun-Mo Koo ◽  
Won-Ju Cho ◽  
Dong Uk Lee ◽  
Seon Pil Kim ◽  
Eun Kyu Kim
Keyword(s):  
Nonvolatile Memory ◽  
Gate Insulator ◽  
Charge Storage ◽  
Memory Devices ◽  
Nonvolatile Memory Devices ◽  
In2o3 Nanoparticles ◽  
Storage Characteristics

scholarly journals Nonvolatile memory devices based on undoped and Hf- and NaF-doped ZnO thin film transistors with Ag nanowires inserted between ZnO and gate insulator interface

RSC Advances ◽  
2017 ◽  
Vol 7 (44) ◽  
pp. 27699-27706 ◽  
Author(s):  
Manoj Kumar ◽  
Hakyung Jeong ◽  
Dongjin Lee
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Nonvolatile Memory ◽  
Charge Trapping ◽  
Gate Insulator ◽  
Memory Devices ◽  
Zno Thin Film ◽  
Insulator Interface ◽  
Ag Nanowires ◽  
Nonvolatile Memory Devices

Nonvolatile memory devices based on solution-processed thin film transistors (TFTs) of undoped ZnO and ZnO doped with Hf and NaF incorporating Ag nanowires (AgNWs) as charge trapping media between the ZnO and insulator interface are demonstrated.

Pentafluorosulfanylated polymers as electrets in nonvolatile organic field-effect transistor memory devices

2019 ◽  
Vol 7 (26) ◽  
pp. 7865-7871 ◽  
Author(s):  
Guoxian Zhang ◽  
Yu-Jung Lee ◽  
Prabhat Gautam ◽  
Chia-Chi Lin ◽  
Cheng-Liang Liu ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Charge Storage ◽  
Memory Devices ◽  
Organic Field Effect Transistor ◽  
Nonvolatile Memory Devices ◽  
Effect Transistor ◽  
Styrenic Polymer ◽  
Polymer Electrets

Styrenic polymer electrets with pentafluorosulfanylated sidechains demonstrate their charge-storage capabilities in organic nonvolatile memory devices.

Metal nanocrystals as charge storage nodes for nonvolatile memory devices

2007 ◽  
Vol 52 (8) ◽  
pp. 2920-2926 ◽  
Author(s):  
P.H. Yeh ◽  
L.J. Chen ◽  
P.T. Liu ◽  
D.Y. Wang ◽  
T.C. Chang
Keyword(s):  
Nonvolatile Memory ◽  
Charge Storage ◽  
Memory Devices ◽  
Metal Nanocrystals ◽  
Nonvolatile Memory Devices

Fabrication of YMnO3 Films: New Candidate for Non-Volatile Memory Devices

1996 ◽  
Vol 433 ◽  
Author(s):  
Norifumi Fujimura ◽  
Tadashi Ishida ◽  
Takeshi Yoshimura ◽  
Taichiro Ito
Keyword(s):  
Nonvolatile Memory ◽  
Valence Electron ◽  
Bottom Electrode ◽  
Rf Magnetron Sputtering ◽  
Film Deposition ◽  
Deposition Condition ◽  
Memory Devices ◽  
Non Volatile Memory ◽  
Nonvolatile Memory Devices ◽  
First Time

AbstractWe have proposed ReMnO3 (Re:rare earth) thin films, as a new candidate for nonvolatile memory devices. In this paper, we try to fabricate (0001) oriented YMnO3 films on (111)MgO, (0001)ZnO:Al/(0001) sapphire and (111)Pt/(111)MgO using rf magnetron sputtering. We succeed in obtaining (0001) epitaxial YMnO3 films on (111) MgO and (0001)ZnO:Al/(0001)sapphire substrate, and polycrystalline films on (111)Pt/(1 11)MgO for the first time. Electrical property of the bottom electrode (ZnO:Al) changes with varying the deposition condition of YMnO3 films. However, we find an optimum deposition condition of ZnO:Al film such that it functions as a bottom electrode even after YMnO3 film deposition. The dielectric properties of the epitaxial and polycrystalline YMnO3 films are almost the same. The YMnO3 films show leaky electrical properties. This may be caused by a change in the valence electron of Mn from 3+.

Nonvolatile memory devices with Cu2S and Cu-Pc bilayered films

2007 ◽  
Vol 91 (7) ◽  
pp. 073511 ◽  
Author(s):  
Liang Chen ◽  
Yidong Xia ◽  
Xuefei Liang ◽  
Kuibo Yin ◽  
Jiang Yin ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
Memory Devices ◽  
Nonvolatile Memory Devices
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