scholarly journals Anomalous polarization switching in organic ferroelectric field effect transistors

2007 ◽  
Vol 91 (4) ◽  
pp. 042909 ◽  
Author(s):  
C. A. Nguyen ◽  
P. S. Lee ◽  
N. Ng ◽  
H. Su ◽  
S. G. Mhaisalkar ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Polarization Switching ◽  
Anomalous Polarization

Implementation of an electrically modifiable artificial synapse based on ferroelectric field-effect transistors using Al-doped HfO2 thin films

Nanoscale ◽  
2020 ◽  
Vol 12 (25) ◽  
pp. 13421-13430 ◽  
Author(s):  
So-Jung Yoon ◽  
Seung-Eon Moon ◽  
Sung-Min Yoon
Keyword(s):  
Thin Films ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Polarization Switching ◽  
Ferroelectric Polarization ◽  
Gate Insulators ◽  
Switching Dynamics ◽  
Artificial Synapse

Biological synaptic behaviors such as short-/long-term plasticity were implemented by ferroelectric polarization switching dynamics of Al-doped HfO2 ferroelectric gate insulators.

Air-Stable n-Channel Organic Single-Crystal Field-Effect Transistors

2008 ◽  
Author(s):  
Takafumi Uemura ◽  
Masakazu Yamagishi ◽  
Yukihiro Tominari ◽  
Jun Takeya
Keyword(s):  
Single Crystal ◽  
Crystal Field ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Crystal Field Effect ◽  
Organic Single Crystal

Organic Three-dimensional Field-effect Transistors

2008 ◽  
Author(s):  
M. Uno ◽  
I. Doi ◽  
K. Takimiya ◽  
Jun Takeya
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Three Dimensional
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