Observation of the negative differential capacitance in Schottky diodes with InAs quantum dots near room temperature

2007 ◽  
Vol 90 (26) ◽  
pp. 263114 ◽  
Author(s):  
S. D. Lin ◽  
V. V. Ilchenko ◽  
V. V. Marin ◽  
N. V. Shkil ◽  
A. A. Buyanin ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Schottky Diodes ◽  
Differential Capacitance ◽  
Inas Quantum Dots

Frequency dependence of negative differential capacitance in Schottky diodes with InAs quantum dots

2008 ◽  
Vol 93 (10) ◽  
pp. 103103 ◽  
Author(s):  
S. D. Lin ◽  
V. V. Ilchenko ◽  
V. V. Marin ◽  
K. Y. Panarin ◽  
A. A. Buyanin ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Frequency Dependence ◽  
Schottky Diodes ◽  
Differential Capacitance ◽  
Inas Quantum Dots

InAs Quantum Dots in AlAs/GaAs Short Period Superlattices: Structure, Optical Characteristics and Laser Diodes

2001 ◽  
Vol 707 ◽  
Author(s):  
Vadim Tokranov ◽  
M. Yakimov ◽  
A. Katsnelson ◽  
K. Dovidenko ◽  
R. Todt ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Inas Quantum Dots ◽  
Transmission Electron ◽  
Short Period ◽  
Short Period Superlattices ◽  
Emitting Lasers ◽  
Cladding Layers

ABSTRACTThe influence of two monolayer - thick AlAs under- and overlayers on the formation and properties of self-assembled InAs quantum dots (QDs) has been studied using transmission electron microscopy (TEM) and photoluminescence (PL). Single sheets of InAs QDs were grown inside a 2ML/8ML AlAs/GaAs short-period superlattice with various combinations of under- and overlayers. It was found that 2.4ML InAs QDs with GaAs underlayer and 2ML AlAs overlayer exhibited the lowest QD surface density of 4.2x1010 cm-2 and the largest QD lateral size of about 19 nm as compared to the other combinations of cladding layers. This InAs QD ensemble has also shown the highest room temperature PL intensity with a peak at 1210 nm and the narrowest linewidth, 34 meV. Fabricated edge-emitting lasers using triple layers of InAs QDs with AlAs overlayer demonstrated 120 A/cm2 threshold current density and 1230 nm emission wavelength at room temperature. Excited state QD lasers have shown high thermal stability of threshold current up to 130°C.

Room temperature single-electron memory and light sensor with three-dimensionally positioned InAs quantum dots

2010 ◽  
Vol 97 (22) ◽  
pp. 222112 ◽  
Author(s):  
S. Göpfert ◽  
L. Worschech ◽  
S. Lingemann ◽  
C. Schneider ◽  
D. Press ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Single Electron ◽  
Inas Quantum Dots ◽  
Light Sensor

Noise spectroscopy of localized states in Au/n-GaAs Schottky diodes containing InAs quantum dots

2006 ◽  
Vol 50 (3) ◽  
pp. 340-344
Author(s):  
A. Tsormpatzoglou ◽  
D.H. Tassis ◽  
C.A. Dimitriadis ◽  
G. Kamarinos ◽  
P. Frigeri ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Schottky Diodes ◽  
Localized States ◽  
Inas Quantum Dots ◽  
Noise Spectroscopy

1/f noise of GaAs Schottky diodes embedded with self-assembled InAs quantum dots

2004 ◽  
Author(s):  
Jin Dong Song ◽  
Won June Choi ◽  
Il Ki Han ◽  
Woon-Jo Cho ◽  
Jung I. Lee ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Schottky Diodes ◽  
Inas Quantum Dots ◽  
Self Assembled

InAs quantum dots in AlAs/GaAs short period superlattices: structure, optical characteristics and laser diodes

2001 ◽  
Vol 692 ◽  
Author(s):  
Vadim Tokranov ◽  
M. Yakimov ◽  
A. Katsnelson ◽  
K. Dovidenko ◽  
R. Todt ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Inas Quantum Dots ◽  
Transmission Electron ◽  
Short Period ◽  
Short Period Superlattices ◽  
Emitting Lasers ◽  
Cladding Layers

AbstractThe influence of two monolayer - thick AlAs under- and overlayers on the formation and properties of self-assembled InAs quantum dots (QDs) has been studied using transmission electron microscopy (TEM) and photoluminescence (PL). Single sheets of InAs QDs were grown inside a 2ML/8ML AlAs/GaAs short-period superlattice with various combinations of under- and overlayers. It was found that 2.4ML InAs QDs with GaAs underlayer and 2ML AlAs overlayer exhibited the lowest QD surface density of 4.2×1010 cm-2 and the largest QD lateral size of about 19 nm as compared to the other combinations of cladding layers. This InAs QD ensemble has also shown the highest room temperature PL intensity with a peak at 1210 nm and the narrowest linewidth, 34 meV. Fabricated edge-emitting lasers using triple layers of InAs QDs with AlAs overlayer demonstrated 120 A/cm2 threshold current density and 1230 nm emission wavelength at room temperature. Excited state QD lasers have shown high thermal stability of threshold current up to 130°C.

Enhancement of room-temperature photoluminescence in InAs quantum dots

2003 ◽  
Vol 83 (21) ◽  
pp. 4300-4302 ◽  
Author(s):  
W. Lu ◽  
Y. L. Ji ◽  
G. B. Chen ◽  
N. Y. Tang ◽  
X. S. Chen ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Inas Quantum Dots ◽  
Room Temperature Photoluminescence

scholarly journals Enhancement of the room temperature luminescence of InAs quantum dots by GaSb capping

2007 ◽  
Vol 91 (1) ◽  
pp. 012111 ◽  
Author(s):  
J. M. Ripalda ◽  
D. Alonso-Álvarez ◽  
B. Alén ◽  
A. G. Taboada ◽  
J. M. García ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Inas Quantum Dots ◽  
Room Temperature Luminescence
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