Enhancement of room-temperature photoluminescence in InAs quantum dots

2003 ◽  
Vol 83 (21) ◽  
pp. 4300-4302 ◽  
Author(s):  
W. Lu ◽  
Y. L. Ji ◽  
G. B. Chen ◽  
N. Y. Tang ◽  
X. S. Chen ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Inas Quantum Dots ◽  
Room Temperature Photoluminescence

Enhancement of Room Temperature Photoluminescence from InAs Quantum Dots by Irradiating Mn

2007 ◽  
Vol 46 (No. 34) ◽  
pp. L801-L803
Author(s):  
Seiji Nagahara ◽  
Masahiko Shimoda ◽  
Shiro Tsukamoto ◽  
Yasuhiko Arakawa
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Inas Quantum Dots ◽  
Room Temperature Photoluminescence

InAs Quantum Dots in AlAs/GaAs Short Period Superlattices: Structure, Optical Characteristics and Laser Diodes

2001 ◽  
Vol 707 ◽  
Author(s):  
Vadim Tokranov ◽  
M. Yakimov ◽  
A. Katsnelson ◽  
K. Dovidenko ◽  
R. Todt ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Inas Quantum Dots ◽  
Transmission Electron ◽  
Short Period ◽  
Short Period Superlattices ◽  
Emitting Lasers ◽  
Cladding Layers

ABSTRACTThe influence of two monolayer - thick AlAs under- and overlayers on the formation and properties of self-assembled InAs quantum dots (QDs) has been studied using transmission electron microscopy (TEM) and photoluminescence (PL). Single sheets of InAs QDs were grown inside a 2ML/8ML AlAs/GaAs short-period superlattice with various combinations of under- and overlayers. It was found that 2.4ML InAs QDs with GaAs underlayer and 2ML AlAs overlayer exhibited the lowest QD surface density of 4.2x1010 cm-2 and the largest QD lateral size of about 19 nm as compared to the other combinations of cladding layers. This InAs QD ensemble has also shown the highest room temperature PL intensity with a peak at 1210 nm and the narrowest linewidth, 34 meV. Fabricated edge-emitting lasers using triple layers of InAs QDs with AlAs overlayer demonstrated 120 A/cm2 threshold current density and 1230 nm emission wavelength at room temperature. Excited state QD lasers have shown high thermal stability of threshold current up to 130°C.

Room temperature single-electron memory and light sensor with three-dimensionally positioned InAs quantum dots

2010 ◽  
Vol 97 (22) ◽  
pp. 222112 ◽  
Author(s):  
S. Göpfert ◽  
L. Worschech ◽  
S. Lingemann ◽  
C. Schneider ◽  
D. Press ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Single Electron ◽  
Inas Quantum Dots ◽  
Light Sensor

Room temperature photoluminescence of PbS quantum dots: Capping agent and thermal effect

Luminescence ◽  
2019 ◽  
Vol 34 (3) ◽  
pp. 387-390
Author(s):  
Ha‐Sung Kong ◽  
Byoung‐Ju Kim ◽  
Kwang‐Sun Kang
Keyword(s):  
Quantum Dots ◽  
Thermal Effect ◽  
Room Temperature ◽  
Capping Agent ◽  
Room Temperature Photoluminescence ◽  
Pbs Quantum Dots

InAs quantum dots in AlAs/GaAs short period superlattices: structure, optical characteristics and laser diodes

2001 ◽  
Vol 692 ◽  
Author(s):  
Vadim Tokranov ◽  
M. Yakimov ◽  
A. Katsnelson ◽  
K. Dovidenko ◽  
R. Todt ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Inas Quantum Dots ◽  
Transmission Electron ◽  
Short Period ◽  
Short Period Superlattices ◽  
Emitting Lasers ◽  
Cladding Layers

AbstractThe influence of two monolayer - thick AlAs under- and overlayers on the formation and properties of self-assembled InAs quantum dots (QDs) has been studied using transmission electron microscopy (TEM) and photoluminescence (PL). Single sheets of InAs QDs were grown inside a 2ML/8ML AlAs/GaAs short-period superlattice with various combinations of under- and overlayers. It was found that 2.4ML InAs QDs with GaAs underlayer and 2ML AlAs overlayer exhibited the lowest QD surface density of 4.2×1010 cm-2 and the largest QD lateral size of about 19 nm as compared to the other combinations of cladding layers. This InAs QD ensemble has also shown the highest room temperature PL intensity with a peak at 1210 nm and the narrowest linewidth, 34 meV. Fabricated edge-emitting lasers using triple layers of InAs QDs with AlAs overlayer demonstrated 120 A/cm2 threshold current density and 1230 nm emission wavelength at room temperature. Excited state QD lasers have shown high thermal stability of threshold current up to 130°C.

scholarly journals Enhancement of the room temperature luminescence of InAs quantum dots by GaSb capping

2007 ◽  
Vol 91 (1) ◽  
pp. 012111 ◽  
Author(s):  
J. M. Ripalda ◽  
D. Alonso-Álvarez ◽  
B. Alén ◽  
A. G. Taboada ◽  
J. M. García ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Inas Quantum Dots ◽  
Room Temperature Luminescence

Room-Temperature Dephasing in InAs Quantum Dots

2000 ◽  
Vol 178 (1) ◽  
pp. 337-340 ◽  
Author(s):  
P. Borri ◽  
W. Langbein ◽  
J. Mørk ◽  
J.M. Hvam ◽  
F. Heinrichsdorff ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Inas Quantum Dots

Enhanced light emission from InAs quantum dots in single-defect photonic crystal microcavities at room temperature

2005 ◽  
Vol 87 (7) ◽  
pp. 071111 ◽  
Author(s):  
W.-Y. Chen ◽  
W.-H. Chang ◽  
H.-S. Chang ◽  
T. M. Hsu ◽  
Chien-Chieh Lee ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Photonic Crystal ◽  
Room Temperature ◽  
Light Emission ◽  
Inas Quantum Dots ◽  
Single Defect ◽  
Photonic Crystal Microcavities
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