Effect of excitation wavelength on the Raman scattering from optical phonons in silicon carbide monofilaments

2007 ◽  
Vol 102 (2) ◽  
pp. 023512 ◽  
Author(s):  
Yanling Ward ◽  
Robert J. Young ◽  
Robert A. Shatwell
1991 ◽  
Vol 235 ◽  
Author(s):  
D. K. Sood ◽  
V. C. Nath ◽  
Yang Xi

ABSTRACTAmorphisation of sintered SiC by bombardment with self (C, Si) ions has been studied. Ion doses ranged from 1×1015 to 1×1017 ions/cm2; and ion energy was varied from 0.09 to 5 MeV. Amorphisation was detected by micro-focus Raman scattering. Tribomechanical properties-friction and wear were studied with a high precision pin (steel ball) and disc (implanted) machine. Results show substantial improvements in friction and wear, which persist to a large number of cycles. Tribomechanical properties are shown to correlate with surface amorphisation and carburisation. Carbon ions are found to be much more effective than Si ions (with similar damage distributions) in reducing friction and wear.


Molecules ◽  
2018 ◽  
Vol 23 (9) ◽  
pp. 2296 ◽  
Author(s):  
Yao Huang ◽  
Run Yang ◽  
Shijie Xiong ◽  
Jian Chen ◽  
Xinglong Wu

Silicon carbide (SiC) has a large number of polytypes of which 3C-, 4H-, 6H-SiC are most common. Since different polytypes have different energy gaps and electrical properties, it is important to identify and characterize various SiC polytypes. Here, Raman scattering is performed on 6H-SiC micro/nanocrystal (MNC) films to investigate all four folded transverse optic (TO) and longitudinal optic (LO) modes. With increasing film thickness, the four folded TO modes exhibit the same frequency downshift, whereas the four folded LO modes show a gradually-reduced downshift. For the same film thickness, all the folded modes show larger frequency downshifts with decreasing MNC size. Based on plasmons on MNCs, these folded modes can be attributed to strong coupling of the folded phonons with plasmons which show different strengths for the different folded modes while changing the film thickness and MNC size. This work provides a useful technique to identify SiC polytypes from Raman scattering.


1999 ◽  
Vol 215 (1) ◽  
pp. 419-424 ◽  
Author(s):  
S. Reich ◽  
A.R. Go�i ◽  
C. Thomsen ◽  
F. Heinrichsdorff ◽  
A. Krost ◽  
...  

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