Electron lifetime measurements of heavily C-doped InGaAs and GaAsSb as a function of the doping density

2007 ◽  
Vol 90 (24) ◽  
pp. 242104 ◽  
Author(s):  
D. Vignaud ◽  
D. A. Yarekha ◽  
J. F. Lampin ◽  
M. Zaknoune ◽  
S. Godey ◽  
...  
Keyword(s):  
Electron Lifetime ◽  
Doping Density ◽  
Lifetime Measurements

DELAYED COINCIDENCE AUGER ELECTRON LIFETIME MEASUREMENTS

1979 ◽  
Vol 40 (C1) ◽  
pp. C1-221-C1-222
Author(s):  
S. Schumann ◽  
I. A. Sellin ◽  
R. Mann ◽  
H. J. Frischkorn ◽  
D. Rosich ◽  
...  
Keyword(s):  
Auger Electron ◽  
Electron Lifetime ◽  
Lifetime Measurements

Carrier Lifetime Measurements by Photoconductance at Low Temperature on Passivated Crystalline Silicon Wafers

2013 ◽  
Vol 1536 ◽  
pp. 119-125 ◽  
Author(s):  
Guillaume Courtois ◽  
Bastien Bruneau ◽  
Igor P. Sobkowicz ◽  
Antoine Salomon ◽  
Pere Roca i Cabarrocas
Keyword(s):  
Low Temperature ◽  
Electron Mobility ◽  
Carrier Density ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Crystalline Silicon ◽  
Silicon Wafers ◽  
Doping Density ◽  
Lifetime Measurements ◽  
Effective Lifetime

ABSTRACTWe propose an implementation of the PCD technique to minority carrier effective lifetime assessment in crystalline silicon at 77K. We focus here on (n)-type, FZ, polished wafers passivated by a-Si:H deposited by PECVD at 200°C. The samples were immersed into liquid N2 contained in a beaker placed on a Sinton lifetime tester. Prior to be converted into lifetimes, data were corrected for the height shift induced by the beaker. One issue lied in obtaining the sum of carrier mobilities at 77K. From dark conductance measurements performed on the lifetime tester, we extracted an electron mobility of 1.1x104 cm².V-1.s-1 at 77K, the doping density being independently calculated in order to account for the freezing effect of dopants. This way, we could obtain lifetime curves with respect to the carrier density. Effective lifetimes obtained at 77K proved to be significantly lower than at RT and not to depend upon the doping of the a-Si:H layers. We were also able to experimentally verify the expected rise in the implied Voc, which, on symmetrically passivated wafers, went up from 0.72V at RT to 1.04V at 77K under 1 sun equivalent illumination.

Electron lifetime of heavily Be-doped In0.53Ga0.47As as a function of growth temperature and doping density

2002 ◽  
Vol 80 (22) ◽  
pp. 4151-4153 ◽  
Author(s):  
D. Vignaud ◽  
J. F. Lampin ◽  
E. Lefebvre ◽  
M. Zaknoune ◽  
F. Mollot
Keyword(s):  
Growth Temperature ◽  
Electron Lifetime ◽  
Doping Density

Electron lifetime measurements in MQW detectors: absorption and photoresponse saturation by a free electron laser

1995 ◽  
Vol 17 (1) ◽  
pp. 11-13 ◽  
Author(s):  
J.Y. Duboz ◽  
E. Costard ◽  
E. Rosencher ◽  
P. Bois ◽  
J.M. Berset ◽  
...  
Keyword(s):  
Free Electron ◽  
Free Electron Laser ◽  
Electron Lifetime ◽  
Lifetime Measurements

Angular correlation and lifetime measurements in Ne

1968 ◽  
Vol 111 (1) ◽  
pp. 529-550
Author(s):  
W KUTSCHERA ◽  
D PELTE ◽  
G SCHRIEDER
Keyword(s):  
Angular Correlation ◽  
Lifetime Measurements

Seeking the Good Fitting Procedure of PALS Polymer Spectra

2008 ◽  
Vol 607 ◽  
pp. 64-66
Author(s):  
Nicolas Laforest ◽  
Jérémie De Baerdemaeker ◽  
Corine Bas ◽  
Charles Dauwe
Keyword(s):  
Experimental Data ◽  
Low Temperature ◽  
Positron Annihilation ◽  
Physical Meaning ◽  
Lifetime Measurements ◽  
Positron Annihilation Lifetime ◽  
Fitting Procedure ◽  
Fitting Procedures ◽  
Blob Model

Positron annihilation lifetime measurements on polymethylmethacrylate (PMMA) at low temperature were performed. Different discrete fitting procedures have been used to analyze the experimental data. It shows that the extracted parameters depend strongly on the fitting procedure. The physical meaning of the results is discussed. The blob model seems to give the best annihilation parameters.

Collective properties of neutron-deficient Nd isotopes: Lifetime measurements of the yrast states in Nd136

2021 ◽  
Vol 103 (4) ◽  
Author(s):  
A. Turturică ◽  
C. Costache ◽  
P. Petkov ◽  
J.-P. Delaroche ◽  
M. Girod ◽  
...  
Keyword(s):  
Nd Isotopes ◽  
Lifetime Measurements

scholarly journals Decoupling bulk and surface recombination properties in silicon by depth-dependent carrier lifetime measurements

2021 ◽  
Vol 118 (25) ◽  
pp. 252105
Author(s):  
K. Yokoyama ◽  
J. S. Lord ◽  
J. Miao ◽  
P. Murahari ◽  
A. J. Drew
Keyword(s):  
Carrier Lifetime ◽  
Surface Recombination ◽  
Lifetime Measurements
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