Electron lifetime of heavily Be-doped In0.53Ga0.47As as a function of growth temperature and doping density

2002 ◽  
Vol 80 (22) ◽  
pp. 4151-4153 ◽  
Author(s):  
D. Vignaud ◽  
J. F. Lampin ◽  
E. Lefebvre ◽  
M. Zaknoune ◽  
F. Mollot
Keyword(s):  
Growth Temperature ◽  
Electron Lifetime ◽  
Doping Density

Electron lifetime measurements of heavily C-doped InGaAs and GaAsSb as a function of the doping density

2007 ◽  
Vol 90 (24) ◽  
pp. 242104 ◽  
Author(s):  
D. Vignaud ◽  
D. A. Yarekha ◽  
J. F. Lampin ◽  
M. Zaknoune ◽  
S. Godey ◽  
...  
Keyword(s):  
Electron Lifetime ◽  
Doping Density ◽  
Lifetime Measurements

Silicon and Zinc Co-Doped InGaN Films with High Luminuous Efficiency Grown by LP-MOVCD at High Growth Temperature

1998 ◽  
Vol 12 (28) ◽  
pp. 1185-1190
Author(s):  
Y. Z. Tong ◽  
F. Li ◽  
G. Y. Zhang ◽  
Z. J. Yang ◽  
S. X. Jin ◽  
...  
Keyword(s):  
Growth Temperature ◽  
High Growth ◽  
Luminous Efficiency ◽  
Photoluminescence Intensity ◽  
Doping Density ◽  
Light Emitting ◽  
Co Doping ◽  
Si Doping ◽  
Low Pressure Mocvd ◽  
Co Doped

Silicon and zinc co-doped InGaN films were grown by low pressure MOCVD at growth temperature from 820°C to 1060°C. The 455 nm blue light emitting peak was obtained by Si and Zn co-doping. It was found that the photoluminescence intensity of the 455 nm wavelength peak dramatically increases with increasing of growth temperature. The luminous efficiency nearly increases 100 times from 820°C to 1060°C. It was demonstrated that the characteristics mainly come from improvement of crystalline quality instead of the change of Zn or Si doping density in the InGaN films.

Structure and Orientation of As Precipitates in LT-MBE Grown GaAs

1991 ◽  
Vol 49 ◽  
pp. 900-901 ◽  
Author(s):  
Alain Claverie ◽  
Zuzanna Liliental-Weber
Keyword(s):  
Transport Properties ◽  
Layer Thickness ◽  
Growth Temperature ◽  
Low Temperatures ◽  
Lattice Parameter ◽  
Crystalline Quality ◽  
Insulating Properties ◽  
Lt Gaas

GaAs layers grown by MBE at low temperatures (in the 200°C range, LT-GaAs) have been reported to have very interesting electronic and transport properties. Previous studies have shown that, before annealing, the crystalline quality of the layers is related to the growth temperature. Lowering the temperature or increasing the layer thickness generally results in some columnar polycrystalline growth. For the best “temperature-thickness” combinations, the layers may be very As rich (up to 1.25%) resulting in an up to 0.15% increase of the lattice parameter, consistent with the excess As. Only after annealing are the technologically important semi-insulating properties of these layers observed. When annealed in As atmosphere at about 600°C a decrease of the lattice parameter to the substrate value is observed. TEM studies show formation of precipitates which are supposed to be As related since the average As concentration remains almost unchanged upon annealing.

DELAYED COINCIDENCE AUGER ELECTRON LIFETIME MEASUREMENTS

1979 ◽  
Vol 40 (C1) ◽  
pp. C1-221-C1-222
Author(s):  
S. Schumann ◽  
I. A. Sellin ◽  
R. Mann ◽  
H. J. Frischkorn ◽  
D. Rosich ◽  
...  
Keyword(s):  
Auger Electron ◽  
Electron Lifetime ◽  
Lifetime Measurements
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