Annealing condition optimization and electrical characterization of amorphous LaAlO3∕GaAs metal-oxide-semiconductor capacitors

2007 ◽  
Vol 90 (24) ◽  
pp. 243505 ◽  
Author(s):  
Donghun Choi ◽  
James S. Harris ◽  
Maitri Warusawithana ◽  
Darrell G. Schlom
Keyword(s):  
Metal Oxide ◽  
Electrical Characterization ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Annealing Condition ◽  
Condition Optimization

Electrical characterization of deoxyribonucleic acid hybridization in metal-oxide-semiconductor-like structures

2012 ◽  
Vol 101 (9) ◽  
pp. 093703 ◽  
Author(s):  
S. Libertino ◽  
G. Cannella ◽  
V. Aiello ◽  
A. Busacca ◽  
S. Lombardo
Keyword(s):  
Metal Oxide ◽  
Deoxyribonucleic Acid ◽  
Electrical Characterization ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor

scholarly journals Electrical Characterization of Positively Charged SiO Coatings for MOS Solar Cells

2020 ◽  
Vol 15 (2) ◽  
pp. 1-5
Author(s):  
William Tsuyoshi Shiga ◽  
Stefanie Pereira Regis ◽  
Gabriel Oliveira Louzada ◽  
Marcos Norio Watanabe ◽  
Fábio Izumi ◽  
...  
Keyword(s):  
Solar Cells ◽  
Metal Oxide ◽  
Relative Permittivity ◽  
Electrical Characterization ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Mos Capacitors ◽  
Effective Charges ◽  
Positively Charged

This article discusses fabrication, characteriza-tion and studies of the C-V characteristics of SiO layers depos-ited by PVD on Si-p <100> substrates with doping around 1x1016 cm-3. MOS capacitors (Metal-Oxide-Semiconductor) with Al/SiO2/Si-P, Al/SiO/Si-P and Al/SiO/SiO2/Si-P structures were manufactured. It was observed the presence of negative charges in the structure with SiO/SiO2 with density of effective charges Qf ≈ -1x1012 cm-2 and relative permittivity of the die-lectric εr = 2.9. After sintering in ultrapure Ar and N2+H2(10%) the relative permittivity changed to εr = 4.52 and the layers stayed positively charged (Qf = (0.5-1.6)x1012 cm-2), which is adequate for positively charged anti-reflective (AR) coatings of MOS solar cells.

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