Inhomogeneities in Ni∕4H-SiC Schottky barriers: Localized Fermi-level pinning by defect states

2007 ◽  
Vol 101 (11) ◽  
pp. 114514 ◽  
Author(s):  
D. J. Ewing ◽  
L. M. Porter ◽  
Q. Wahab ◽  
X. Ma ◽  
T. S. Sudharshan ◽  
...  
Keyword(s):  
Fermi Level ◽  
Schottky Barriers ◽  
Defect States ◽  
Fermi Level Pinning

Metal silicide Schottky barriers on Si and Ge show weaker Fermi level pinning

2012 ◽  
Vol 101 (5) ◽  
pp. 052110 ◽  
Author(s):  
L. Lin ◽  
Y. Guo ◽  
J. Robertson
Keyword(s):  
Fermi Level ◽  
Schottky Barriers ◽  
Metal Silicide ◽  
Fermi Level Pinning

Mechanisms of Fermi level pinning in Schottky barriers on InGaAsSb and AlGaAsSb

1993 ◽  
Vol 36 (10) ◽  
pp. 1371-1373 ◽  
Author(s):  
A.Y. Polyakov ◽  
A.G. Milnes ◽  
N.B. Smirnov ◽  
L.V. Druzhinina ◽  
I.V. Tunitskaya
Keyword(s):  
Fermi Level ◽  
Schottky Barriers ◽  
Fermi Level Pinning

Advanced Characterization of the Electronic Structure of MEH-PPV

2005 ◽  
Vol 871 ◽  
Author(s):  
David Keith Chambers ◽  
Sandra Selmic
Keyword(s):  
Optical Absorption ◽  
Fermi Level ◽  
Incident Energy ◽  
Light Emitting Diode ◽  
Emission Spectra ◽  
Advanced Characterization ◽  
Bandgap Energy ◽  
Defect States ◽  
Fermi Level Pinning ◽  
Energy Dependent

AbstractIn this paper, we present research results that explore the basic molecular structure, orientation, and electrical properties of the conjugated polymer poly(2-methoxy-5- (2,9-ethyl-hexyloxy)-1,4-phenylenevinylene) (MEH-PPV). The bandgap structure of MEH-PPV was investigated through optical absorption and emission spectra, and ultraviolet photoemission spectroscopy (UPS). Based on the optical absorption of MEH-PPV, the π-π* bandgap energy is 2.14eV. The emission spectrum of ITO/MEH-PPV/Al light emitting diode has a peak at 590nm in wavelength which corresponds to photon energies of 2.1eV. By using ultraviolet synchrotron radiation to investigate the highest occupied molecular orbitals (HOMO) of the MEH-PPV, the relative change in photoemission cross-section for various electron states was measured. The HOMO to Fermi level gap obtained from UPS spectra is about 3eV. The UPS measurements include angle-resolved and incident energy dependent spectra. Some indication of bulk film orientation was inferred by dispersion of incident energy dependent UPS. Disparities in these spectra imply some role for defect states, extrinsic carrier involvement, or Fermi-level pinning.

Fermi Level Pinning in Au Schottky Barriers on InGaP and InGaAlP

1994 ◽  
Vol 340 ◽  
Author(s):  
V.A. Gorbyley ◽  
A.A. Chelniy ◽  
A.A. Chekalin ◽  
A.Y. Polyakov ◽  
S.J. Pearon ◽  
...  
Keyword(s):  
Quantum Well ◽  
Fermi Level ◽  
Plasma Treatment ◽  
Schottky Barrier ◽  
Hydrogen Plasma ◽  
Schottky Diodes ◽  
Schottky Barriers ◽  
Quantum Well Structures ◽  
Fermi Level Pinning ◽  
Barrier Heights

ABSTRACTIt is shown that in Au/InGaP and Au/InGaAlP Schottky diodes the Fermi level is pinned by metal-deposition-induced midgap states. Hydrogen plasma treatment of such diodes greatly improves the reverse currents. The measured Schottky barrier heights seem to correlate with the valence band offsets measured by DLTS on quantum well structures.

Tuning Schottky barriers for monolayer GaSe FETs by exploiting a weak Fermi level pinning effect

2018 ◽  
Vol 20 (33) ◽  
pp. 21732-21738 ◽  
Author(s):  
Nanshu Liu ◽  
Si Zhou ◽  
Nan Gao ◽  
Jijun Zhao
Keyword(s):  
Fermi Level ◽  
Schottky Barriers ◽  
Great Promise ◽  
Gallium Selenide ◽  
Two Dimensional ◽  
Fermi Level Pinning ◽  
Pinning Effect

Monolayer gallium selenide (GaSe), an emerging two-dimensional semiconductor, holds great promise for electronics and optoelectronics.

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