scholarly journals Temperature dependent photoluminescence in oxygen ion implanted and rapid thermally annealed ZnO∕ZnMgO multiple quantum wells

2007 ◽  
Vol 90 (22) ◽  
pp. 221914 ◽  
Author(s):  
Xiaoming Wen ◽  
Jeffrey A. Davis ◽  
Lap Van Dao ◽  
Peter Hannaford ◽  
V. A. Coleman ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Temperature Dependent ◽  
Oxygen Ion ◽  
Temperature Dependent Photoluminescence ◽  
Ion Implanted

Temperature-dependent Photoluminescence Spectra of InGaN/GaN Multiple Quantum Wells Blue LED Wafers

2019 ◽  
Vol 40 (7) ◽  
pp. 891-897
Author(s):  
杨超普 YANG Chao-pu ◽  
方文卿 FANG Wen-qing ◽  
毛清华 MAO Qing-hua ◽  
杨 岚 YANG Lan ◽  
刘彦峰 LIU Yan-feng ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Photoluminescence Spectra ◽  
Temperature Dependent ◽  
Blue Led ◽  
Temperature Dependent Photoluminescence

Temperature-dependent Carrier Leakage in InGaN/GaN Multiple Quantum Wells Light-emitting Diodes

2017 ◽  
Vol 38 (1) ◽  
pp. 63-69
Author(s):  
刘诗涛 LIU Shi-tao ◽  
王立 WANG Li ◽  
伍菲菲 WU Fei-fei ◽  
杨祺 YANY Qi ◽  
何沅丹 HE Yuan-dan ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emitting Diodes ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Temperature Dependent ◽  
Light Emitting

Temperature dependent dynamic of excitons in Zn1−xCdxSe/ZnSe multiple quantum wells

1998 ◽  
Vol 23 (1) ◽  
pp. 23-27
Author(s):  
D. Greco ◽  
L. Calcagnile ◽  
R. Cingolani ◽  
M. Lomascolo ◽  
M. Di Dio ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Temperature Dependent

Optical Properties of Zn0.46Cd0.54Se/Zn0.24Cd0.25Mg0.51Se Multiple Quantum Wells for Infrared Photodetector Applications

2006 ◽  
Vol 952 ◽  
Author(s):  
Xuecong Zhou ◽  
Shengkun Zhang ◽  
Hong Lu ◽  
Aidong Shen ◽  
Wubao Wang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Quantum Cascade Lasers ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Infrared Photodetector ◽  
Temperature Dependent ◽  
Time Resolved ◽  
Mid Infrared ◽  
Luminescence Efficiency ◽  
Decay Times

ABSTRACTRecently, lattice-matched Zn0.46Cd0.54Se/ZnCdMgSe multiple-quantum-wells (MQWs) have been recognized as very promising materials to fabricate intersubband (ISB) devices such as quantum cascade lasers and mid-infrared photoconductors. These structures have important applications in biological and chemical detections. The ISB transition covers a wide mid-infrared wavelength range from 1.3 μm to a few tens of μm.In this work, two heavily doped n-Zn0.46Cd0.54Se/Zn0.24Cd0.25Mg0.51Se MQW structures have been grown on InP (001) substrate by molecular beam epitaxy. Temperature dependent steady-state photoluminescence (SSPL), temperature dependent time- resolved photoluminescence (TRPL), and Fourier transform infrared spectroscopy (FTIR) were performed to characterize their interband and ISB properties. These two MQW samples have similar structures except different well widths and different number of periods. The integrated SSPL intensities and the PL decay times of the MQWs were measured as functions of temperature in the range from 77 K to 290 K. The luminescence efficiency of the sample with 28 Å well width is larger than that of the sample with 42 Å well width although both samples exhibit similar temperature dependence of PL intensity. Time-resolved PL measurements show that the PL decay times of both samples decrease with increasing temperature. From 77 K to 290 K, the decay time of the sample with 28 Å well width is in the range of 440 ps ∼ 120 ps and is much longer than that of the sample with 42 Å well width, which is in the range of 65 ps ∼ 25 ps. Strong non-radiative recombinations dominate the luminescence behavior of the wider MQWs. Intersubband absorption spectra of the samples were measured by FTIR and show peak absorption at wavelengths of 3.99 μm and 5.35 μm for the MQWs with well widths of 28 Å and 42 Å, respectively, falling within the 3-5 Åm range, which is of great interest for the infrared photodetector applications.

“S-shaped” temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells

1998 ◽  
Vol 73 (10) ◽  
pp. 1370-1372 ◽  
Author(s):  
Yong-Hoon Cho ◽  
G. H. Gainer ◽  
A. J. Fischer ◽  
J. J. Song ◽  
S. Keller ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Carrier Dynamics ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Temperature Dependent
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