Growth temperature dependent radiative relaxation in AlGaAs/GaAs multiple quantum wells

1989 ◽  
Vol 55 (4) ◽  
pp. 362-364 ◽  
Author(s):  
Hideaki Matsueda ◽  
Kiyoaki Hara
Keyword(s):  
Quantum Wells ◽  
Growth Temperature ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Temperature Dependent ◽  
Radiative Relaxation

Influence of InGaN layer growth temperature on luminescence properties of InGaN/GaN multiple quantum wells

2018 ◽  
Vol 5 (2) ◽  
pp. 025906 ◽  
Author(s):  
Xiaowei Wang ◽  
Jing Yang ◽  
Degang Zhao ◽  
Desheng Jiang ◽  
Zongshun Liu ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Growth Temperature ◽  
Layer Growth ◽  
Multiple Quantum Wells ◽  
Luminescence Properties ◽  
Multiple Quantum ◽  
Ingan Layer

scholarly journals Temperature dependent photoluminescence in oxygen ion implanted and rapid thermally annealed ZnO∕ZnMgO multiple quantum wells

2007 ◽  
Vol 90 (22) ◽  
pp. 221914 ◽  
Author(s):  
Xiaoming Wen ◽  
Jeffrey A. Davis ◽  
Lap Van Dao ◽  
Peter Hannaford ◽  
V. A. Coleman ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Temperature Dependent ◽  
Oxygen Ion ◽  
Temperature Dependent Photoluminescence ◽  
Ion Implanted

Temperature-dependent Carrier Leakage in InGaN/GaN Multiple Quantum Wells Light-emitting Diodes

2017 ◽  
Vol 38 (1) ◽  
pp. 63-69
Author(s):  
刘诗涛 LIU Shi-tao ◽  
王立 WANG Li ◽  
伍菲菲 WU Fei-fei ◽  
杨祺 YANY Qi ◽  
何沅丹 HE Yuan-dan ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emitting Diodes ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Temperature Dependent ◽  
Light Emitting

Temperature-dependent Photoluminescence Spectra of InGaN/GaN Multiple Quantum Wells Blue LED Wafers

2019 ◽  
Vol 40 (7) ◽  
pp. 891-897
Author(s):  
杨超普 YANG Chao-pu ◽  
方文卿 FANG Wen-qing ◽  
毛清华 MAO Qing-hua ◽  
杨 岚 YANG Lan ◽  
刘彦峰 LIU Yan-feng ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Photoluminescence Spectra ◽  
Temperature Dependent ◽  
Blue Led ◽  
Temperature Dependent Photoluminescence

Influence of growth temperature on emission efficiency of InGaN/GaN multiple quantum wells

2001 ◽  
Vol 693 ◽  
Author(s):  
Fei Chen ◽  
A. N. Cartwright ◽  
Paul M. Sweeney ◽  
M. C. Cheung ◽  
Jeffrey S. Flynn ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Growth Temperature ◽  
Radiative Recombination ◽  
Localized States ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Lower Growth ◽  
Time Resolved ◽  
Gaussian Shape ◽  
Emission Efficiency

AbstractA comparative study, using time-resolved and CW photoluminescence spectroscopy, of MOVPE grown InGaN/GaN multiple quantum wells deposited on HVPE GaN/Sapphire at different growth temperatures was undertaken. It was found that the PL linewidth increased and the peak emission energy decreased as the growth temperature was reduced. Moreover, the sample grown at an intermediate growth temperature exhibited total integrated luminescence intensity much greater than the samples grown at higher or lower growth temperatures. A phenomenological carrier recombination dynamics model based on the competition of quantum well-like radative recombination, spatially localized radiative recombination in potential minima and non-radiative recombination through defects is presented to provide an explanation of the observed emission dynamics and efficiency. In this model, the emission efficiency is determined by the relative area of defects and the number density of localized states in the potential minima, both of which are influenced by the growth temperature. Furthermore, the photon energy dependent lifetimes are well fitted with this model by assuming a Gaussian shape localized states distribution. The localized potential minima are consistent with nanoscale indium rich regions due to indium aggregation.

Sign in / Sign up

Export Citation Format

Share Document