Fabrication of highly conductive Ti1−xNbxO2 polycrystalline films on glass substrates via crystallization of amorphous phase grown by pulsed laser deposition

2007 ◽  
Vol 90 (21) ◽  
pp. 212106 ◽  
Author(s):  
T. Hitosugi ◽  
A. Ueda ◽  
S. Nakao ◽  
N. Yamada ◽  
Y. Furubayashi ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Amorphous Phase ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Polycrystalline Films ◽  
Glass Substrates

Pulsed laser deposition of oriented V2O5 thin films

2000 ◽  
Vol 15 (10) ◽  
pp. 2249-2265 ◽  
Author(s):  
Jeanne M. McGraw ◽  
John D. Perkins ◽  
Falah Hasoon ◽  
Philip A. Parilla ◽  
Chollada Warmsingh ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Oxygen Pressure ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Glass Substrates ◽  
Wide Range ◽  
Phase Pure ◽  
Amorphous Quartz ◽  
Quartz Substrates

We have found that by varying only the substrate temperature and oxygen pressure five different crystallographic orientations of V2O5 thin films can be grown, ranging from amorphous to highly textured crystalline. Dense, phase-pure V2O5 thin films were grown on SnO2/glass substrates and amorphous quartz substrates by pulsed laser deposition over a wide range of temperatures and oxygen pressures. The films' microstructure, crystallinity, and texturing were characterized by electron microscopy, x-ray diffraction, and Raman spectroscopy. Temperature and oxygen pressure appeared to play more significant roles in the resulting crystallographic texture than did the choice of substrate. A growth map summarizes the results and delineates the temperature and O2 pressure window for growing dense, uniform, phase-pure V2O5 films.

scholarly journals Study of structural, optical and electrical properties of thin Ag2Cu2O4 films prepared by pulsed laser deposition

2019 ◽  
Vol 15 (34) ◽  
pp. 41-54
Author(s):  
Iqbal S. Naji
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Sintering Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Positive Sign ◽  
Glass Substrates ◽  
Atomic Force ◽  
Structural Surface ◽  
P Type

The influence of sintering and annealing temperatures on the structural, surface morphology, and optical properties of Ag2Cu2O4 thin films which deposited on glass substrates by pulsed laser deposition method have been studied. Ag2Cu2O4 powders have polycrystalline structure, and the Ag2Cu2O4 phase was appear as low intensity peak at 35.57o which correspond the reflection from (110) plane. Scan electron microscopy images of Ag2Cu2O4 powder has been showed agglomerate of oxide particles with platelets shape. The structure of thin films has been improved with annealing temperature. Atomic Force micrographs of Ag2Cu2O4 films showed uniform, homogenous films and the shape of grains was almost spherical and larger grain size of 97.85 nm has obtained for film sintered at 600 °C. The optical band gap was increase from 1.6 eV to 1.65 eV when sintering temperature increased to 300 °C and decrease to 1.45 eV at 600 °C for the films deposited at room temperature. Heat treatment of films has been increased the energy band with increasing sintering temperature. Hall coefficient of Ag2Cu2O4 films have a positive sign which means the charge carrier is a p-type. The electrical conductivity decreases with increasing of the sintering temperature for as deposited and annealed films.

scholarly journals The Properties of Zn-Doped AlSb Thin Films Prepared by Pulsed Laser Deposition

Coatings ◽  
2019 ◽  
Vol 9 (2) ◽  
pp. 136
Author(s):  
Ping Tang ◽  
Weimin Wang ◽  
Bing Li ◽  
Lianghuan Feng ◽  
Guanggen Zeng
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Band Gap ◽  
Photovoltaic Effect ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Sem Images ◽  
Glass Substrates ◽  
Substrate Temperatures

Aluminum antimony (AlSb) is a promising photovoltaic material with a band gap of about 1.62 eV. However, AlSb is highly deliquescent and not stable, which has brought great difficulties to the applications. Based on the above situation, there are two purposes for preparing our Zn-doped AlSb (AlSb:Zn) thin films: One is to make P-type AlSb and the other is to find a way to suppress the deliquescence of AlSb. The AlSb:Zn thin films were prepared on glass substrates at different substrate temperatures by using the pulsed laser deposition (PLD) method. The structural, surface morphological, optical, and electrical properties of AlSb:Zn films were investigated. The crystallization of AlSb:Zn thin films was enhanced and the electrical resistivity decreased as the substrate temperature increased. The scanning electron microscopy (SEM) images indicated that the grain sizes became bigger as the substrate temperatures increased. The Raman vibration mode AlSb:Zn films were located at ~107 and ~142 cm−1 and the intensity of Raman peaks was stronger at higher substrate temperatures. In the experiment, a reduced band gap (1.4 eV) of the AlSb:Zn thin film was observed compared to the undoped AlSb films, which were more suitable for thin-film solar cells. Zn doping could reduce the deliquescent speed of AlSb thin films. The fabricated heterojunction device showed the good rectification behavior, which indicated the PN junction formation. The obvious photovoltaic effect has been observed in an FTO/ZnS/AlSb:Zn/Au device.

Growth and Characterization of Urea Doped p-Type ZnO Thin Film Grown by Pulsed Laser Deposition

2009 ◽  
Vol 67 ◽  
pp. 127-130 ◽  
Author(s):  
Majumdar Sayanee ◽  
Banerji Pallab
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Pulses ◽  
Laser Deposition ◽  
Zno Films ◽  
Group V ◽  
Xrd Pattern ◽  
Glass Substrates ◽  
P Type

In the present study we have used urea as the source for doping nitrogen in ZnO since the most successful acceptor type dopant is the group V element like nitrogen. The nitrogen doped ZnO films have been deposited on glass substrates using Pulsed Laser Deposition technique using 248 nm KrF laser at energy 300 mJ by varying the number of laser pulses with a repetition rate of 10 pulse/sec in vacuum (10-6 mbar) at a constant temperature of 300 °C. The XRD pattern confirms the formation of wurtzite structure of ZnO, which is polycrystalline in nature. We have also performed UV absorption spectroscopy and the band gap is found to be 3.4 eV. Resistivity of the film increases with the increase of thickness for the undoped ZnO samples where the carrier concentrations are found to be of the order of 1017 cm-3. The mobility of the as-grown film is found to be 24.9 cm2/V-s. After doping with nitrogen the carrier concentration drops to the order of 1015 cm-3 and the mobility becomes 1.5 cm2/V-s. The mobility slightly varies with thickness. The resistivity increases to 1.3 KΩ-cm and the film shows p-type behavior. The results are explained on the basis of the available theory.

Pulsed Laser Deposition of Pseudocapacitive Metal Oxide Thin Films for Supercapacitor Applications

2012 ◽  
Vol 706-709 ◽  
pp. 884-889
Author(s):  
Dong Fang Yang
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Amorphous Phase ◽  
Manganese Oxides ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Material Research ◽  
Metal Oxide Thin Films ◽  
Pure Phases ◽  
Steel Substrates

Thin films of manganese oxides have been prepared by pulsed laser deposition (PLD) process on silicon and stainless steel substrates at different substrate temperatures and oxygen gas pressures. By proper selection of temperature and oxygen pressure during the PLD process, pure phases of Mn2O3, Mn3O4 as well as an amorphous phase of MnOx were successfully fabricated and characterized by X-ray diffraction. The pseudo-capacitance behaviors of those manganese oxides of different phases have also been evaluated by the electrochemical cyclic voltammetry in 0.1 M Na2SO4 aqueous electrolyte. Their specific current and capacitance determined at different scan rates were calculated and compared. The results show that polycrystalline Mn2O3 phase has the highest specific current and capacitance, while the values for polycrystalline Mn3O4 films are the lowest. The amorphous phase MnOx films have the values sitting in between those of Mn2O3 and Mn3O4. The specific capacitance of Mn2O3 films reaches 200 F/g at 1 mV/sec scan with excellent stability and cyclic durability. This work has demonstrated that PLD is a very promising technique for supercapacitor material research due to its excellent flexibility and capability of controlling microstructures and phases of various materials.

OPTICAL WAVEGUIDE FABRICATION AND REFRACTIVE INDEX CHARACTERIZATION OF Nd:LuVO4 THIN FILMS BY PULSED LASER DEPOSITION

2007 ◽  
Vol 14 (06) ◽  
pp. 1079-1082 ◽  
Author(s):  
HONGXIA LI ◽  
XIN WU ◽  
RENGUO SONG ◽  
JIYANG WANG
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Pulsed Laser Deposition ◽  
Silica Glass ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Propagation Mode ◽  
Glass Substrates ◽  
Oriented Polycrystalline ◽  
Waveguide Fabrication

High-quality Nd:LuVO 4 thin films have been grown on silica glass substrates by using a pulsed laser deposition technique. X-ray diffraction results show that the as-deposited Nd:LuVO 4 film is basically oriented polycrystalline, and strong (200) peak was revealed. The waveguide property was characterized by the prism-coupling method. The refractive index of the propagation mode is higher than that of the silica glass substrate which means that the dips correspond to real propagation mode, where the light could be well defined. The surface morphology of the deposited Nd:LuVO 4 films was also observed by using an atomic force microscopy.

Polarity of heavily doped ZnO films grown on sapphire and SiO2 glass substrates by pulsed laser deposition

2011 ◽  
Vol 519 (18) ◽  
pp. 5875-5881 ◽  
Author(s):  
Yutaka Adachi ◽  
Naoki Ohashi ◽  
Takeshi Ohgaki ◽  
Tsuyoshi Ohnishi ◽  
Isao Sakaguchi ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Films ◽  
Sio2 Glass ◽  
Glass Substrates ◽  
Heavily Doped ◽  
Doped Zno

scholarly journals Optical properties of ZnCoO layers obtained by PLD method

2018 ◽  
Vol 35 (4) ◽  
pp. 878-884 ◽  
Author(s):  
P. Potera ◽  
I. Virt ◽  
G. Wisz ◽  
J. Cebulski
Keyword(s):  
Optical Properties ◽  
Pulsed Laser Deposition ◽  
Cobalt Oxide ◽  
Pulsed Laser ◽  
Growth Conditions ◽  
Laser Deposition ◽  
Process Conditions ◽  
Gap Energy ◽  
Glass Substrates

Abstract Optical properties of the zinc-cobalt oxide (ZnCoO) layers manufactured at different process conditions have been investigated. ZnCoO layers were grown on sapphire and glass substrates by pulsed laser deposition (PLD) technique. The influence of growth conditions as well as post-growth annealing on the films transmission and gap energy was analyzed.

Transparent conductive ZnO thin films on glass substrates deposited by pulsed laser deposition

2005 ◽  
Vol 277 (1-4) ◽  
pp. 284-292 ◽  
Author(s):  
F.K. Shan ◽  
G.X. Liu ◽  
W.J. Lee ◽  
G.H. Lee ◽  
I.S. Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Thin Films ◽  
Glass Substrates
Sign in / Sign up

Export Citation Format

Share Document