Mechanism for persistent hexagonal island formation in AlN buffer layer during growth on Si (111) by plasma-assisted molecular beam epitaxy

2007 ◽  
Vol 90 (21) ◽  
pp. 211902 ◽  
Author(s):  
Kuang-Yuan Hsu ◽  
Hung-Chin Chung ◽  
Chuan-Pu Liu ◽  
Li-Wei Tu
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Island Formation ◽  
Aln Buffer

scholarly journals Effect of Aluminum Nitride Buffer Layer Deposited by Molecular Beam Epitaxy on the Growth of Aluminum Nitride Thin Films Deposited by DC Magnetron Sputtering Technique

2021 ◽  
Author(s):  
B. Riah ◽  
Julien Camus ◽  
Abdelhak Ayad ◽  
Mohammad Rammal ◽  
Raouia Zernadji ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Aluminum Nitride ◽  
Magnetron Sputtering ◽  
Epitaxial Growth ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Dc Magnetron Sputtering ◽  
Aln Buffer

This paper reports the effect of silicon substrate orientation and aluminum nitride buffer layer deposited by molecular beam epitaxy on the growth of aluminum nitride thin films deposited by DC magnetron sputtering technique at low temperature. The structural analysis has revealed a strong (0001) fiber texture for both substrates Si (100) and (111) and a hetero-epitaxial growth on few nanometers AlN buffer layer grown by MBE on Si (111) substrate. SEM images and XRD characterization have shown an enhancement in AlN crystallinity thanks to AlN (MBE) buffer layer. Raman spectroscopy indicated that the AlN film was relaxed when it deposited on Si (111), in compression on Si (100) and under tension on AlN buffer layer grown by MBE/Si (111) substrates, respectively. The interface between Si (111) and AlN grown by MBE is abrupt and well defined; contrary to the interface between AlN deposited using PVD and AlN grown by MBE. Nevertheless, AlN hetero-epitaxial growth was obtained at low temperature (<250°C).

Study of Interface Properties of InN and InN-Based Heterostructures by Molecular Beam Epitaxy

2001 ◽  
Vol 693 ◽  
Author(s):  
Hai Lu ◽  
William J. Schaff ◽  
Lester F. Eastman ◽  
Colin Wood
Keyword(s):  
Molecular Beam Epitaxy ◽  
Film Thickness ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Growth Conditions ◽  
High Energy ◽  
Near Surface ◽  
Low Leakage ◽  
Sheet Charge ◽  
Aln Buffer

AbstractIn this work, we prepared epitaxial InN on (0001) sapphire with an AlN or GaN buffer layer by molecular beam epitaxy (MBE). A series of samples were grown with different thickness under the optimized growth conditions. Films were characterized by x-ray diffraction (XRD), reflective high-energy electron diffraction (RHEED), atomic-force microscopy (AFM), transmission electron microscopy (TEM) and Hall measurements. By extrapolating the fitted curve of sheet carrier density vs. film thickness to zero film thickness, a strong residual sheet charge was derived, which may be located at the interface between the buffer layer and the InN film, or at the near-surface. It was found that for InN film on AlN buffer, the residual sheet charge is about 4.3×1013 cm-2, while for InN films on GaN buffer, the residual sheet charge is about 2.5×1013 cm-2. At present, we tentatively believe that the residual charge is surface charge accumulation similar to what is observed at the InAs surface. InN samples with Hall mobility beyond 1300 cm2/Vs and carrier concentration below 2×1018 cm-3 were routinely achieved in this study.The first study on InN-based FET structures was performed. Amorphous AlN was used as the barrier material, which was prepared by migration enhanced epitaxy (MEE) at low growth temperature. It was found that the surface morphology is improved after an AlN barrier layer is added to InN. Hg was used as a back-to-back Schottky metallization. Very low leakage current and weak rectifying behavior were observed.

Influence of AlN buffer layer on molecular beam epitaxy growth of wurtzite Al1−xScxN thin films

2020 ◽  
Vol 43 (1) ◽  
Author(s):  
Shashidhara Acharya ◽  
Abhijit Chatterjee ◽  
Seema ◽  
Mukul Gupta ◽  
Bivas Saha
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Growth ◽  
Aln Buffer

Effect of AlN buffer layer properties on the morphology and polarity of GaN nanowires grown by molecular beam epitaxy

2011 ◽  
Vol 110 (5) ◽  
pp. 053506 ◽  
Author(s):  
Matt D. Brubaker ◽  
Igor Levin ◽  
Albert V. Davydov ◽  
Devin M. Rourke ◽  
Norman A. Sanford ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Gan Nanowires ◽  
Aln Buffer

scholarly journals Influence of surface nitridation and an AlN buffer layer on the growth of GaN nanostructures on a flexible Ti metal foil using laser molecular beam epitaxy

2019 ◽  
Vol 58 (SC) ◽  
pp. SC1032 ◽  
Author(s):  
Chodipilli Ramesh ◽  
Prashant Tyagi ◽  
Govind Gupta ◽  
Muthusamy Senthil Kumar ◽  
Sunil Singh Kushvaha
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Metal Foil ◽  
Laser Molecular Beam Epitaxy ◽  
Aln Buffer

Preparation of InN and InN-Based Heterostructures by Molecular Beam Epitaxy

2001 ◽  
Vol 680 ◽  
Author(s):  
Hai Lu ◽  
William J. Schaff ◽  
Jeonghyun Hwang ◽  
Lester F. Eastman
Keyword(s):  
Molecular Beam Epitaxy ◽  
Carrier Concentration ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Buffer Layers ◽  
X Ray Diffraction ◽  
Optimum Growth Temperature ◽  
Migration Enhanced Epitaxy ◽  
Dimensional Electron Gas ◽  
Aln Buffer

ABSTRACTInN is an important III-V compound semiconductor with many potential microelectronic and optoelectronic applications. In this study, we prepared epitaxial InN on (0001) sapphire with an AlN buffer layer by molecular beam epitaxy, and its variation, migration enhanced epitaxy. A series of samples were grown with different substrate temperatures ranging from 360°C to 590°C. The optimum growth temperature for InN was found to be between 450°C and 500°C. We also found that thicker AlN buffer layers result in the best InN quality. With increasing thickness of an AlN buffer layer, the Hall electron mobility of InN increases while the carrier concentration decreases. The surface morphology is also improved this way. Hall mobility greater than 800 cm2/Vs with carrier concentration 2-3×1018 cm−3 at room temperature can be routinely obtained for ∼0.1[.proportional]m thick InN films. Various InN-based heterostructures with AlInN or AlN barrier were fabricated. X-ray diffraction study clearly shows the barrier and InN layers. A 2-dimensional electron gas resulting from polarization induced electrons was observed in capacitance-voltage measurements. Some results on Mg doping of InN will be discussed as well.

Effect of an AlN buffer layer on the epitaxial growth of InN by molecular-beam epitaxy

2001 ◽  
Vol 79 (10) ◽  
pp. 1489-1491 ◽  
Author(s):  
Hai Lu ◽  
William J. Schaff ◽  
Jeonghyun Hwang ◽  
Hong Wu ◽  
Goutam Koley ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Aln Buffer
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