Effects of strained InGaN interlayer on contact resistance between p-GaN and indium tin oxide

2007 ◽  
Vol 90 (18) ◽  
pp. 181125 ◽  
Author(s):  
Chi-Ling Lee ◽  
Wei-I Lee
Keyword(s):  
Contact Resistance ◽  
Tin Oxide ◽  
Indium Tin Oxide

Improvement of the light output and contact resistance of InGaN-based light-emitting diodes based on tantalum-doped indium tin oxide as p-type electrodes

2010 ◽  
Vol 19 (4) ◽  
pp. 047205 ◽  
Author(s):  
Huang Jun-Yi ◽  
Fan Guang-Han ◽  
Zheng Shu-Wen ◽  
Niu Qiao-Li ◽  
Li Shu-Ti ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Light Emitting Diodes ◽  
Light Output ◽  
Light Emitting ◽  
P Type

Contact resistance between pentacene and indium–tin oxide (ITO) electrode with surface treatment

2007 ◽  
Vol 8 (6) ◽  
pp. 690-694 ◽  
Author(s):  
Dong-Jin Yun ◽  
Dong-Kyu Lee ◽  
Hwan-Ki Jeon ◽  
Shi-Woo Rhee
Keyword(s):  
Contact Resistance ◽  
Surface Treatment ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Ito Electrode

Electrical Characteristics Of The Transparent Conductive Oxide / p-a-Si:H Interface

1996 ◽  
Vol 426 ◽  
Author(s):  
Stephan Guse ◽  
Dimitrios Peros ◽  
Michael Wagner ◽  
Markus Böhm
Keyword(s):  
Contact Resistance ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Contact Region ◽  
Transparent Conductive Oxide ◽  
Boron Doped ◽  
Current Voltage ◽  
Bridge Structures ◽  
Direct Sensing ◽  
Hydrogenated Amorphous

AbstractThe current-voltage (I-V) characteristics of the interfaces between boron-doped hydrogenated amorphous silicon (p-a-Si:H) and transparent conductive oxides (TCOs) such as tin oxide (SnO2) and indium tin oxide (ITO) are experimentally determined. The measurements are performed on especially developed Kelvin cross bridge structures which allow the direct sensing of the contact region. All contacts exhibit for high dopant concentrations an almost linear I-V characteristic. The values of the contact resistance depend on the TCO type and range between 0.5 and 4 Ω· cm2 at 25°C. Gradual reduction of the boron doping level leads to a remarkable increase of the contact resistance and finally to a rectifying behavior. The results indicate that tunnelling across the interface contributes significantly to the current transport. This conclusion is also supported by the behavior of the I-V characteristics at low temperatures. Regarding degradation of the contacts a systematic reduction of the contact resistance is observed after ageing them for 1000 hours at 80°C.

Fan-shaped mid-infrared chiral metamaterials based on indium tin oxide and their circular dichroism

2020 ◽  
Vol 13 (4) ◽  
pp. 722-727
Author(s):  
ZHU Ye-xin ◽  
◽  
◽  
LI Ya-nan ◽  
SHI Wei-jie ◽  
...  
Keyword(s):  
Circular Dichroism ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Mid Infrared ◽  
Chiral Metamaterials ◽  
Circular Dichroïsm

Indium tin oxide/GaAs photodiodes for millimetric-wave applications

1986 ◽  
Vol 22 (23) ◽  
pp. 1266 ◽  
Author(s):  
D.G. Parker ◽  
P.G. Say
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Millimetric Wave

Indium–tin oxide film electrode as catalytic amperometric sensor for hydrogen peroxide

The Analyst ◽  
1995 ◽  
Vol 120 (10) ◽  
pp. 2579-2583 ◽  
Author(s):  
Xiaohua Cai ◽  
Božidar Ogorevc ◽  
Gabrijela Tavčar ◽  
Joseph Wang
Keyword(s):  
Hydrogen Peroxide ◽  
Oxide Film ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Amperometric Sensor ◽  
Film Electrode
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