Screen-printed multicrystalline silicon solar cells with porous silicon antireflective layer formed by electrochemical etching

2007 ◽  
Vol 101 (10) ◽  
pp. 104515 ◽  
Author(s):  
Jae-Hong Kwon ◽  
Soo-Hong Lee ◽  
Byeong-Kwon Ju
Keyword(s):  
Solar Cells ◽  
Porous Silicon ◽  
Electrochemical Etching ◽  
Multicrystalline Silicon ◽  
Silicon Solar Cells ◽  
Screen Printed

The porous silicon emitter concept applied to multicrystalline silicon solar cells

1997 ◽  
Vol 297 (1-2) ◽  
pp. 291-295 ◽  
Author(s):  
S Strehlke ◽  
D Sarti ◽  
A Krotkus ◽  
K Grigoras ◽  
C Lévy-Clément
Keyword(s):  
Solar Cells ◽  
Porous Silicon ◽  
Multicrystalline Silicon ◽  
Silicon Solar Cells

Combination of silicon nitride and porous silicon induced optoelectronic features enhancement of multicrystalline silicon solar cells

2011 ◽  
Vol 8 (6) ◽  
pp. 1874-1877 ◽  
Author(s):  
Mohamed Ben Rabha ◽  
Wissem Dimassi ◽  
Mounir Gaidi ◽  
Hatem Ezzaouia ◽  
Brahim Bessais
Keyword(s):  
Solar Cells ◽  
Silicon Nitride ◽  
Porous Silicon ◽  
Multicrystalline Silicon ◽  
Silicon Solar Cells

Effects of Electrochemical Etching Time on the Performance of Porous Silicon Solar Cells on Crystalline n-Type (100) and (111)

2017 ◽  
Vol 46 ◽  
pp. 45-56 ◽  
Author(s):  
Khalid Omar ◽  
Khaldun A. Salman
Keyword(s):  
Solar Cells ◽  
Porous Silicon ◽  
Crystalline Silicon ◽  
Electrochemical Etching ◽  
Silicon Layer ◽  
Porous Silicon Layer ◽  
Silicon Solar Cells ◽  
Etching Time ◽  
Crystalline Silicon Solar Cells ◽  
Coating Layers

Electrochemical etching was carried out to produce porous silicon based on crystalline silicon n-type (100) and (111) wafers. Etching times of 10, 20, and 30 min were applied. Porous silicon layer was used as anti-reflection coating on crystalline silicon solar cells. The optimal etching time is 20 min for preparing porous silicon layers based on crystalline silicon n-type (100) and (111) wafers. Nanopores with high porosity were produced on the porous silicon layer based on crystalline silicon n-type (100) and (111) wafers with average diameters of 5.7 and 5.8 nm, respectively. Average crystallite sizes for the porous silicon layer based on crystalline silicon n-type (100) and (111) wafers were 20.57 and 17.45 nm at 20 and 30 min, respectively, due to the increase in broadening of the full width at half maximum. Photoluminescence peaks for porous silicon layers based on crystalline silicon n-type (100) and (111) wafers increased with growing porosity and a great blue shift in luminescence. The minimum effective coefficient of reflection was obtained from porous silicon layers based on the crystalline silicon n-type (100) wafer compared with n-type (111) wafer and as-grown at different etching times. Porous silicon layers based on the crystalline silicon n-type (100) wafer at 20 min etching time exhibited excellent light trapping at wavelengths ranging from 400 to 1000 nm. Thus, fabricated crystalline silicon solar cells based on porous silicon (100) anti-reflection coating layers achieved the highest efficiency at 15.50% compared to porous silicon (111) anti-reflection coating layers. The efficiency is characterized applying I-V characterization system under 100 mW/cm2 illumination conditions.

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