Defect study on the indium-gallium alloy system of copper chalcopyrites performed on solar cell heterostructures

2007 ◽  
Vol 101 (10) ◽  
pp. 104507 ◽  
Author(s):  
Verena Mertens ◽  
Jürgen Parisi ◽  
Rolf Reineke-Koch
Keyword(s):  
Solar Cell ◽  
Alloy System ◽  
Indium Gallium ◽  
Gallium Alloy

Comparative Study of Copper Indium Gallium Selenide (CIGS) Solar Cell With Other Solar Technologies

2021 ◽  
Author(s):  
Isabela C. B. ◽  
Ricardo Lameirinhas ◽  
Carlos A. F. Fernandes ◽  
João Paulo N. Torres
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Comparative Study ◽  
Crystalline Silicon ◽  
Gallium Selenide ◽  
Copper Indium Gallium Selenide ◽  
Cigs Solar Cell ◽  
Copper Indium ◽  
Indium Gallium ◽  
Copper Indium Gallium

Thin-film modules are emerging in the photovoltaic market, due to their competitive cost with the traditional crystalline silicon modules. The thin-film cells CuIn(1-x)Ga(x)Se2 (Copper Indium Gallium Selenide - CIGS) are...

Materials Optimization for thin-film copper indium gallium selenide (CIGS) solar cell based on distributed braggs reflector

Optik ◽  
2020 ◽  
pp. 165987
Author(s):  
Waqas Farooq ◽  
Thamraa Alshahrani ◽  
Syed Asfandyar Ali Kazmi ◽  
Javed Iqbal ◽  
Hassnain Abbas Khan ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Gallium Selenide ◽  
Copper Indium Gallium Selenide ◽  
Cigs Solar Cell ◽  
Copper Indium ◽  
Indium Gallium ◽  
Copper Indium Gallium

A low temperature, single step, pulsed d.c magnetron sputtering technique for copper indium gallium diselenide photovoltaic absorber layers

2013 ◽  
Vol 1538 ◽  
pp. 45-50 ◽  
Author(s):  
Sreejith Karthikeyan ◽  
Kushagra Nagaich ◽  
Arthur E Hill ◽  
Richard D Pilkington ◽  
Stephen A Campbell
Keyword(s):  
Optical Properties ◽  
Solar Cell ◽  
Single Step ◽  
Copper Indium Gallium Diselenide ◽  
Copper Indium ◽  
Photovoltaic Applications ◽  
Indium Gallium ◽  
P Type ◽  
Substrate Temperatures ◽  
Copper Indium Gallium

ABSTRACTPulsed d.c Magnetron Sputtering (PdcMS) has been investigated for the first time to study the deposition of copper indium gallium diselenide (CIGS) thin films for photovoltaic applications. Pulsing the d.c. in the mid frequency region enhances the ion intensity and enables long term arc-free operation for the deposition of high resistivity materials such as CIGS. It has the potential to produce films with good crystallinity, even at low substrate temperatures. However, the technique has not generally been applied to the absorber layers for photovoltaic applications. The growth of stoichiometric p-type CIGS with the desired electro-optical properties has always been a challenge, particularly over large areas, and has involved multiple steps often including a dangerous selenization process to compensate for selenium vacancies. The films deposited by PdcMS had a nearly ideal composition (Cu0.75In0.88Ga0.12Se2) as deposited at substrate temperatures ranging from no intentional heating to 400 °C. The films were found to be very dense and pin-hole free. The stoichiometry was independent of heating during the deposition, but the grain size increased with substrate temperature, reaching about ∼ 150 nm at 400 °C. Hot probe analysis showed that the layers were p-type. The physical, structural and optical properties of these films were analyzed using SEM, EDX, XRD, and UV-VIS-NIR spectroscopy. The material characteristics suggest that these films can be used for solar cell applications. This novel ion enhanced single step low temperature deposition technique may have a critical role in flexible and tandem solar cell applications compared to other conventional techniques which require higher temperatures.

Optical Absorption at Digitally and Continuously Graded Indium Gallium Nitride Schottky Barriers

2007 ◽  
Vol 1012 ◽  
Author(s):  
Choudhury Jayant Praharaj
Keyword(s):  
Gallium Nitride ◽  
Optical Absorption ◽  
Schottky Barrier ◽  
Indium Gallium Nitride ◽  
Spectral Response ◽  
Alloy System ◽  
Schottky Barriers ◽  
Material System ◽  
Indium Gallium ◽  
Absorption Characteristics

AbstractWe present numerical calculations of the optical absorption characteristics of graded Indium Gallium Nitride Schottky Barriers, and study their implications for photovoltaic and photodetector applications. We consider the two cases of digital and continuous grading because of their different effects on the collection of photo-generated carriers due to band discontinuities. Composition grading can achieve desired spectral response between the ranges of 0.7 eV and 3.43 eV afforded by the Indium Gallium Nitride alloy system. The presence of spontaneous and piezoelectric polarizations in this material system adds bulk and/or interface bound charges in graded layers. This has a non-trivial effect on the band profile seen by the photo-generated carriers. The layer thicknesses needed for optimal absorption characteristics are well above the theoretical critical thickness limits reported in the literature for abrupt heterojunctions. However, experimental data about critical thicknesses is scarce, especially for graded compositions. Therefore, we calculate the characteristics of the Schottky barrier for the case of spontaneous polarization only and also for the case of both spontaneous and piezoelectric polarization assuming no relaxation. The low or even negative Schottky barrier heights at low Gallium composition necessitates the use of high Gallium composition layers next to the metal, in order to suppress the excessive dark currents

Electrodeposited Gallium Alloy Thin Films Synthesized by Solid State Reactions for CIGS Solar Cell

2011 ◽  
Vol 159 (2) ◽  
pp. D129-D134 ◽  
Author(s):  
S. Ahmed ◽  
K. B. Reuter ◽  
Q. Huang ◽  
H. Deligianni ◽  
L. T. Romankiw ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Solid State ◽  
Solid State Reactions ◽  
Cigs Solar Cell ◽  
Gallium Alloy

The comparison between gallium arsenide and indium gallium arsenide as materials for solar cell performance using Silvaco application

2015 ◽  
Author(s):  
Suhaila Mohd Zahari ◽  
Mohd Natashah Norizan ◽  
Ili Salwani Mohamad ◽  
Rozana Aina Maulat Osman ◽  
Sanna Taking
Keyword(s):  
Gallium Arsenide ◽  
Solar Cell ◽  
Indium Gallium Arsenide ◽  
Cell Performance ◽  
Solar Cell Performance ◽  
Indium Gallium
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