The comparison between gallium arsenide and indium gallium arsenide as materials for solar cell performance using Silvaco application

Author(s):  
Suhaila Mohd Zahari ◽  
Mohd Natashah Norizan ◽  
Ili Salwani Mohamad ◽  
Rozana Aina Maulat Osman ◽  
Sanna Taking
2020 ◽  
Vol 12 ◽  
Author(s):  
Shingmila Hungyo ◽  
Khomdram Jolson Singh ◽  
Dickson Warepam ◽  
Rudra Sankar Dhar

Background: Energy is a major concern in every aspect of our life. Solar energy is a renewable environment friendly source of energy. Therefore, solar cells are vastly studied with different technology and with different material. Objective: The main objective here is to analyze InGaN material for solar cell applications with less complicated structures of MQW solar cells on revising solar cell with the recombination structure, I-V characteristics and its efficiency. Methods: The device is simulated using SILVACO ATLAS where the well and the barrier layers are inserted in the depletion region employing material combination of InGaN / GaN which increases the solar cell performance parameter. This work focuses on the photogeneration rate, recombination in the active region as well as its current voltage relation from the simulation. Results: With the increase in the number of QW periods in the active region of the device, the photovoltaic parameters especially conversion efficiency increases significantly. Under space AM0 solar illumination, the cell efficiency increases up to 8.2 % for 20 MQWs with 20% Indium content for the InGaN/GaN structure. It enhances the external quantum efficiency (EQE) upto 36% at nearly 380nm wavelength range near the UV region. Conclusion: The modelled structure is efficiently simulated using TCAD SILVACO ATLAS, and the material Indium Gallium Nitride semiconductor shows an excellent solar cell performance with high solar radiation. It is also observed that with increase in the number of well periods the solar cell performance increases which demonstrates the feasibility of Indium Gallium Nitride solar cell with additional MQW period as power source.


2020 ◽  
pp. 114-119

Experimental and theoretical study Porphyrin-grafted ZnO nanowire arrays were investigated for organic/inorganic hybrid solar cell applications. Two types of porphyrin – Tetra (4-carboxyphenyle) TCPP and meso-Tetraphenylporphine (Zinc-TPP)were used to modify the nanowire surfaces. The vertically aligned nanowires with porphyrin modifications were embedded in graphene-enriched poly (3-hexylthiophene) [G-P3HT] for p-n junction nanowire solar cells. Surface grafting of ZnO nanowires was found to improve the solar cell efficiency. There are different effect for the two types of porphyrin as results of Zn existing. Annealing effects on the solar cell performance were investigated by heating the devices up to 225 °C in air. It was found that the cell performance was significantly degraded after annealing. The degradation was attributed to the polymer structural change at high temperature as evidenced by electrochemical impedance spectroscopy measurements.


Author(s):  
Apichat Phengdaam ◽  
Supeera Nootchanat ◽  
Ryousuke Ishikawa ◽  
Chutiparn Lertvachirapaiboon ◽  
Kazunari Shinbo ◽  
...  

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