Photo-assisted capacitance-voltage characterization of high-quality atomic-layer-deposited Al2O3∕GaN metal-oxide-semiconductor structures

Y. Q. Wu; T. Shen; P. D. Ye; G. D. Wilk

doi:10.1063/1.2719228

Photo-assisted capacitance-voltage characterization of high-quality atomic-layer-deposited Al2O3∕GaN metal-oxide-semiconductor structures

Applied Physics Letters ◽

10.1063/1.2719228 ◽

2007 ◽

Vol 90 (14) ◽

pp. 143504 ◽

Cited By ~ 72

Author(s):

Y. Q. Wu ◽

T. Shen ◽

P. D. Ye ◽

G. D. Wilk

Keyword(s):

Metal Oxide ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Quality ◽

Semiconductor Structures ◽

Capacitance Voltage

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Capacitance-Voltage Characterization of Atomic-Layer-Deposited Al2O3/InGaAs and Al2O3/GaAs Metal-Oxide-Semiconductor Structures

ECS Transactions ◽

10.1149/1.2355699 ◽

2019 ◽

Vol 3 (3) ◽

pp. 59-69 ◽

Cited By ~ 4

Author(s):

Peide (Peter) Ye ◽

Yi Xuan ◽

H.C. Lin

Keyword(s):

Metal Oxide ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

Capacitance Voltage

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Formation and characterization of nanometer scale metal-oxide-semiconductor structures on GaAs using low-temperature atomic layer deposition

Applied Physics Letters ◽

10.1063/1.1954902 ◽

2005 ◽

Vol 87 (1) ◽

pp. 013501 ◽

Cited By ~ 17

Author(s):

P. D. Ye ◽

G. D. Wilk ◽

E. E. Tois ◽

Jian Jim Wang

Keyword(s):

Low Temperature ◽

Atomic Layer Deposition ◽

Metal Oxide ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Nanometer Scale ◽

Semiconductor Structures ◽

Layer Deposition

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Characterization of ultrathin metal–oxide–semiconductor structures using coupled current and capacitance–voltage models based on quantum calculation

Journal of Applied Physics ◽

10.1063/1.1506000 ◽

2002 ◽

Vol 92 (8) ◽

pp. 4449-4458 ◽

Cited By ~ 19

Author(s):

O. Simonetti ◽

T. Maurel ◽

M. Jourdain

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Quantum Calculation ◽

Semiconductor Structures ◽

Capacitance Voltage

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Capacitance–voltage characterization of surface-treated Al2O3/GaN metal–oxide–semiconductor structures

Microelectronic Engineering ◽

10.1016/j.mee.2013.03.108 ◽

2013 ◽

Vol 109 ◽

pp. 10-12 ◽

Cited By ~ 4

Author(s):

Sung-Bum Bae ◽

Ki-Won Kim ◽

Yong Soo Lee ◽

Jung-Hee Lee ◽

Youngho Bae ◽

...

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

Capacitance Voltage

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Capacitance–Voltage Characterization of La$_{2}$O$_{3}$ Metal–Oxide–Semiconductor Structures on In$_{0.53}$Ga$_{0.47}$As Substrate with Different Surface Treatment Methods

Japanese Journal of Applied Physics ◽

10.1143/jjap.50.10pd03 ◽

2011 ◽

Vol 50 (10) ◽

pp. 10PD03 ◽

Cited By ~ 1

Author(s):

Dariush Zade ◽

Takashi Kanda ◽

Koji Yamashita ◽

Kuniyuki Kakushima ◽

Hiroshi Nohira ◽

...

Keyword(s):

Metal Oxide ◽

Surface Treatment ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Treatment Methods ◽

Semiconductor Structures ◽

Capacitance Voltage

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Interface/border trap characterization of Al2O3/AlN/GaN metal-oxide-semiconductor structures with an AlN interfacial layer

Applied Physics Letters ◽

10.1063/1.4907861 ◽

2015 ◽

Vol 106 (5) ◽

pp. 051605 ◽

Cited By ~ 52

Author(s):

Shenghou Liu ◽

Shu Yang ◽

Zhikai Tang ◽

Qimeng Jiang ◽

Cheng Liu ◽

...

Keyword(s):

Metal Oxide ◽

Interfacial Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures

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Trap states in AlGaN/GaN metal-oxide-semiconductor structures with Al2O3 prepared by atomic layer deposition

Journal of Applied Physics ◽

10.1063/1.3428492 ◽

2010 ◽

Vol 107 (10) ◽

pp. 106104 ◽

Cited By ~ 43

Author(s):

D. Gregušová ◽

R. Stoklas ◽

Ch. Mizue ◽

Y. Hori ◽

J. Novák ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Trap States ◽

Semiconductor Structures ◽

Layer Deposition

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High frequency capacitance–voltage characterization of Al2O3/ZrO2/Al2O3 in fully depleted silicon-on-insulator metal–oxide–semiconductor capacitors

Applied Physics Letters ◽

10.1063/1.1579865 ◽

2003 ◽

Vol 83 (25) ◽

pp. 5238-5240 ◽

Cited By ~ 4

Author(s):

N. L. Zhang ◽

Z. T. Song ◽

Q. W. Shen ◽

Y. J. Wu ◽

Q. B. Liu ◽

...

Keyword(s):

Metal Oxide ◽

High Frequency ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Fully Depleted ◽

Capacitance Voltage

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Characteristic trapping lifetime and capacitance-voltage measurements of GaAs metal-oxide-semiconductor structures

Applied Physics Letters ◽

10.1063/1.2790787 ◽

2007 ◽

Vol 91 (13) ◽

pp. 133510 ◽

Cited By ~ 85

Author(s):

Guy Brammertz ◽

Koen Martens ◽

Sonja Sioncke ◽

Annelies Delabie ◽

Matty Caymax ◽

...

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

Capacitance Voltage

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Some electrical properties of the GaAs-anodic oxide interface on the basis of measurements of the capacitance-voltage and conductance-voltage characteristics of metal-oxide-semiconductor structures

Thin Solid Films ◽

10.1016/0040-6090(88)90675-x ◽

1988 ◽

Vol 165 (1) ◽

pp. 21-28

Author(s):

St. Łos̀ ◽

St. Kochowski

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Anodic Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Oxide Interface ◽

Semiconductor Structures ◽

Capacitance Voltage

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