Above-threshold drain current model including band tail states in nanocrystalline silicon thin-film transistors for circuit implementation

2007 ◽  
Vol 101 (8) ◽  
pp. 084506 ◽  
Author(s):  
I. Pappas ◽  
C. A. Dimitriadis ◽  
F. Templier ◽  
M. Oudwan ◽  
G. Kamarinos
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Current Model ◽  
Drain Current ◽  
Nanocrystalline Silicon ◽  
Circuit Implementation ◽  
Band Tail ◽  
Silicon Thin Film

Surface-Potential-Based Drain Current Model for Polycrystalline Silicon Thin-Film Transistors

2008 ◽  
Vol 47 (10) ◽  
pp. 7798-7802 ◽  
Author(s):  
Hiroshi Tsuji ◽  
Tsuyoshi Kuzuoka ◽  
Yuji Kishida ◽  
Yoshiyuki Shimizu ◽  
Masaharu Kirihara ◽  
...  
Keyword(s):  
Thin Film ◽  
Surface Potential ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Current Model ◽  
Drain Current ◽  
Silicon Thin Film

Thickness Effects on the Activation Energy of Source-Drain Current in P and N Channel Polycrystalline Silicon Thin Film Transistors

1990 ◽  
Vol 182 ◽  
Author(s):  
Babar A. Khan ◽  
Ranjana Pandya
Keyword(s):  
Thin Film ◽  
Activation Energy ◽  
Thin Film Transistors ◽  
Drain Current ◽  
Localized States ◽  
Subthreshold Slope ◽  
Band Tail ◽  
Silicon Thin Film ◽  
Sharp Drop ◽  
P Type

AbstractWe report activation energy measurements of the source-drain current of polysilicon thin film transistors (TFTs). We have shown earlier that measurements carried out on unhydrogenated TFTs can be explained by the presence of band tail states in addition to deep localized states. After hydrogenation, the density of band tail states is greatly reduced and the data can be fitted with only the deep states.In the present work we have studied both n and p channel TFTs. This was done by measuring both type of devices on the same wafer so that differences due to processing conditions could be ruled out. Both type of devices had intentionally undoped channels and were identical except for the n or p type source-drain regions. The thinner TFTs discussed in this work have a sharper drop in the activation energy than would be expected from idealized calculations. This sharp drop in activation energy is also an indication of a sharp subthreshold slope. This decrease in subthreshold slope (Volts/decade) is due to the complete depletion of the channel polysilicon, which leads to a rapid increase (or decrease) in the surface potential as a function of the gate voltage.

Analytical surface-potential-based drain current model for amorphous InGaZnO thin film transistors

2013 ◽  
Vol 114 (18) ◽  
pp. 184502 ◽  
Author(s):  
A. Tsormpatzoglou ◽  
N. A. Hastas ◽  
N. Choi ◽  
F. Mahmoudabadi ◽  
M. K. Hatalis ◽  
...  
Keyword(s):  
Thin Film ◽  
Surface Potential ◽  
Thin Film Transistors ◽  
Current Model ◽  
Drain Current ◽  
Amorphous Ingazno

scholarly journals Electromechanical Stability of Flexible Nanocrystalline-Silicon Thin-Film Transistors

2010 ◽  
Vol 31 (3) ◽  
pp. 222-224 ◽  
Author(s):  
I-Chung Chiu ◽  
Jung-Jie Huang ◽  
Yung-Pei Chen ◽  
I-Chun Cheng ◽  
J.Z. Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Nanocrystalline Silicon ◽  
Silicon Thin Film
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