scholarly journals Mechanism of molecular beam epitaxy growth of GaN nanowires on Si(111)

2007 ◽  
Vol 90 (12) ◽  
pp. 123117 ◽  
Author(s):  
R. K. Debnath ◽  
R. Meijers ◽  
T. Richter ◽  
T. Stoica ◽  
R. Calarco ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Growth ◽  
Gan Nanowires

Plasma-assisted molecular beam epitaxy growth of GaN nanowires using indium-enhanced diffusion

2008 ◽  
Vol 93 (18) ◽  
pp. 183109 ◽  
Author(s):  
O. Landré ◽  
R. Songmuang ◽  
J. Renard ◽  
E. Bellet-Amalric ◽  
H. Renevier ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Growth ◽  
Enhanced Diffusion ◽  
Gan Nanowires

scholarly journals GaN and InGaN Nanowires on Si Substrates by Ga-Droplet Molecular Beam Epitaxy

2008 ◽  
Vol 1080 ◽  
Author(s):  
Kevin Goodman ◽  
Kejia Wang ◽  
Xiangning Luo ◽  
John Simon ◽  
Tom Kosel ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Growth Conditions ◽  
Molecular Beam Epitaxy Growth ◽  
Growth Time ◽  
Band Edge Emission ◽  
Si Substrates ◽  
Gan Nanowires ◽  
Transmission Electron ◽  
Microscopy Images

ABSTRACTMolecular beam epitaxy growth of GaN and InGaN nanowires is accomplished on Si (111) substrates using Ga-droplet nucleation. Typical diameters range from 25-80 nm and lengths can be varied by increasing the growth time; the growth rate is ∼0.25 microns/hour. The nanowires have been characterized structurally and optically. Photoluminescence spectra show band-edge emission of GaN nanowires centered at 362 nm at 290 K. Transmission electron microscopy images unveil that the nanowires are highly crystalline, and grow along the 0001 polar direction. Indium has also been successfully incorporated into GaN nanowires by modifying the growth conditions; the InGaN nanowires emit at ∼520 nm, which provides a possible route to solving strain related problems of high In-composition InGaN based efficient green emitters.

scholarly journals Cross-sectional shape evolution of GaN nanowires during molecular beam epitaxy growth on Si(111)

2022 ◽  
Author(s):  
Roman Leonidovich Volkov ◽  
Nikolay I. Borgardt ◽  
Oleg Konovalov ◽  
Sergio Fernández-Garrido ◽  
O. Brandt ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Growth ◽  
Shape Evolution ◽  
Cross Sectional ◽  
Gan Nanowires ◽  
Transmission Electron ◽  
Sectional Shape

We study the cross-sectional shapes of GaN nanowires (NWs) by transmission electron microscopy. The shape is examined at different heights of long NWs, as well as at the same height...

Model for molecular‐beam‐epitaxy growth over nonplanar surfaces

1988 ◽  
Vol 64 (7) ◽  
pp. 3522-3527 ◽  
Author(s):  
Mitsuru Ohtsuka ◽  
Seiichi Miyazawa
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Growth

Molecular beam epitaxy growth of GaAsBi using As2 and As4

2014 ◽  
Vol 390 ◽  
pp. 120-124 ◽  
Author(s):  
Robert D. Richards ◽  
Faebian Bastiman ◽  
Christopher J. Hunter ◽  
Danuta F. Mendes ◽  
Abdul R. Mohmad ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Growth
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