Cross-sectional shape evolution of GaN nanowires during molecular beam epitaxy growth on Si(111)
Keyword(s):
We study the cross-sectional shapes of GaN nanowires (NWs) by transmission electron microscopy. The shape is examined at different heights of long NWs, as well as at the same height...
1996 ◽
Vol 73
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pp. 129-136
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2016 ◽
Vol 30
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pp. 1650269
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1987 ◽
Vol 1
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pp. 322-329
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