Understanding of the excess channel noise in InAlAs∕InGaAs∕InP high electron mobility transistors in impact ionization regime

2007 ◽  
Vol 90 (10) ◽  
pp. 103503 ◽  
Author(s):  
Hong Wang ◽  
Yuwei Liu ◽  
Rong Zeng ◽  
Chee Leong Tan
Keyword(s):  
Electron Mobility ◽  
Impact Ionization ◽  
High Electron Mobility Transistors ◽  
Channel Noise ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

Impact ionization in N-polar AlGaN/GaN high electron mobility transistors

2014 ◽  
Vol 105 (6) ◽  
pp. 063506 ◽  
Author(s):  
N. Killat ◽  
M. J. Uren ◽  
S. Keller ◽  
S. Kolluri ◽  
U. K. Mishra ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Impact Ionization ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

Temperature effect on impact ionization characteristics in metamorphic high electron mobility transistors

2006 ◽  
Vol 89 (26) ◽  
pp. 263503 ◽  
Author(s):  
Po-Hsien Lai ◽  
Ssu-I Fu ◽  
Ching-Wen Hung ◽  
Yan-Ying Tsai ◽  
Tzu-Pin Chen ◽  
...  
Keyword(s):  
Temperature Effect ◽  
Electron Mobility ◽  
Impact Ionization ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors
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