Mapping local strain in thin film/substrate systems using x-ray microdiffraction topography

2007 ◽  
Vol 90 (9) ◽  
pp. 091918 ◽  
Author(s):  
Hanfei Yan ◽  
Conal E. Murray ◽  
I. C. Noyan
Keyword(s):  
Thin Film ◽  
Local Strain ◽  
X Ray ◽  
Film Substrate

The Use of BaF2 Buffer Layers for the Sputter-Deposition of Ticabacuo Thin-Film Superconductors

1989 ◽  
Vol 169 ◽  
Author(s):  
K.M. Hubbard ◽  
P.N. Arendt ◽  
D.R. Brown ◽  
D.W. Cooke ◽  
N.E. Elliott ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Sputter Deposition ◽  
Buffer Layers ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
X Ray ◽  
Film Substrate ◽  
Ion Backscattering ◽  
Scanning Electron

AbstractThin films of the Tl‐based superconductors often have relatively poor properties because of film/substrate interdiffusion which occurs during the anneal. We have therefore investigated the use of BaF2 as a diffusion barrier. TICaBaCuO thin films were deposited by dc magnetron sputtering onto MgO <100> substrates, both with and without an evaporation‐deposited BaF2 buffer layer, and post‐annealed in a Tl over‐pressure. Electrical properties of the films were determined by four‐point probe analysis, and compositions were measured by ion‐backscattering spectroscopy. Structural analysis was performed by X‐ray diffraction and scanning electron microscopy. The BaF2 buffer layers were found to significantly improve the properties of the TICaBaCuO thin films.

X-ray Standing Waves in X-ray Specular Reflection and Fluorescence Study of Nano-Films

1997 ◽  
Vol 30 (5) ◽  
pp. 833-838 ◽  
Author(s):  
S. I. Zheludeva ◽  
M. V. Kovalchuk ◽  
N. N. Novikova ◽  
A. N. Sosphenov ◽  
N. N. Salaschenko ◽  
...  
Keyword(s):  
Thin Film ◽  
Specular Reflection ◽  
Fluorescence Study ◽  
Reflection Curve ◽  
X Ray ◽  
Inorganic Films ◽  
Film Substrate ◽  
Mode Formation ◽  
Ultra Thin Film

The analysis of the wavefield intensity distribution connected with X-ray standing wave (XRSW) generation above the mirror surface at total reflection (TR) is presented for a vacuum/film/substrate sample along with experimental examples for organic and inorganic films for cases where the refractive index of the film is greater than that of the substrate. The thickness of an ultra-thin film may be estimated from the value of the XRSW period formed above the film/substrate interface at TR. In some cases, the thickness of an ultra-thin film may be roughly obtained just from the form of the X-ray reflection curve at incident angles smaller than the critical angle of the substrate. It is demonstrated that interference phenomena at TR, leading to waveguide mode formation inside the layered structure and responsible for a modulation of the X-ray reflection and fluorescence angular dependence, can be used for characterization of nano-films.

Determination of the Mechanical Response of Thin Films with X-Rays

1993 ◽  
Vol 308 ◽  
Author(s):  
I. C. Noyan ◽  
G. Sheikh
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Mechanical Response ◽  
Strain Analysis ◽  
Local Strain ◽  
X Rays ◽  
Stress Strain ◽  
X Ray ◽  
The Individual

ABSTRACTThe mechanical response of a specimen incorporating thin films is dictated by a combination of fundamental mechanical parameters such as Young's moduli of the individual layers, and by configurational parameters such as adhesion strength at the interface(s), residual stress distribution and other process dependent factors. In most systems, the overall response will be dominated by the properties of the (much thicker) substrate. Failure within the individual layers, on the other hand, is dependent on the local strain distributions and can not be predicted from the substrate values alone. To better understand the mechanical response of these systems, the strain within the individual layers of the thin film system must be measured and correlated with applied stresses. Phase selectivity of X-ray stress/strain analysis techniques is well suited for this purpose. In this paper, we will review the use of the traditional x-ray stress/strain analysis methods for the determination of the mechanical properties of thin film systems.

Principal Residual Strains as A function of Depth for Sputter Deposited Mo Thin Films

1994 ◽  
Vol 356 ◽  
Author(s):  
S. G. Malhotra ◽  
Z. U. Rek ◽  
L. J. Parfitt ◽  
S. M. Yalisove ◽  
J. C. Bilello
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grazing Incidence ◽  
X Ray ◽  
X Ray Scattering ◽  
Out Of Plane ◽  
Residual Strains ◽  
Sputter Deposited ◽  
Film Substrate ◽  
Principal Strains

AbstractTraditionally, the magnitude of the stress in a thin film is obtained by measuring the curvature of the film-substrate couple; however, these techniques all measure the average stress throughout the film thickness. On a microscopic level, the details of the strain distribution as a function of depth through the thickness of the film can have important consequences in governing film quality and ultimate morphology. A new method for determining the magnitude of principal strains (strain eigenvalues) as a function of x-ray penetration depth using grazing incidence x-ray scattering for a polycrystalline thin film will be described. Results are reported for two Mo metallizations ˜ 500 Å and ˜1000 Å thick sputtered onto Si {100} substrates. The magnitude of the principal strains at several penetration depths was accomplished by an analysis of the diffraction peak shifts of at least six independent {hkl} scattering vectors from the Mo thin films. An out-of-plane strain gradient was identified in both Mo films and the strain eigenvalues were found to be anisotropic in nature. This new methodology should work with a variety of thin films and hence would provide quantitative insight into the evolution of thin film microstructure.

A Non-Destructive Surface and Interface Study of Very-Thin-Film/Substrate Contact Systems Using Soft X-ray Spectroscopy

1989 ◽  
Author(s):  
Motohiro IWAMI ◽  
Masaaki HIRAI ◽  
Masahiko KUSAKA ◽  
Hatsuo NAKAMURA ◽  
Fumio AKAO
Keyword(s):  
Thin Film ◽  
X Ray ◽  
Surface And Interface ◽  
Film Substrate ◽  
Non Destructive ◽  
Interface Study

X-ray Absorption Spectroscopy Investigation of the Sub-Nanoscale Strain in Thin-Film Lithium Ion Battery Cathodes

2004 ◽  
Vol 822 ◽  
Author(s):  
Faisal M. Alamgir ◽  
Jason Vansluytman ◽  
Daniel Carter ◽  
Jay Whitacre ◽  
Chi-Chang Kao ◽  
...  
Keyword(s):  
Thin Film ◽  
Absorption Spectroscopy ◽  
Rotational Symmetry ◽  
Lithium Ion ◽  
Local Strain ◽  
Intrinsic Stress ◽  
Structural Defects ◽  
X Ray ◽  
Metal Metal ◽  
X Ray Absorption

AbstractLiCoO2 and LiNiO2, two important cathode materials for Li-ion batteries, were studied in their respective bulk and thin-film form. X-ray absorption spectroscopy (XAS) has been used to probe the local atomic structure and structural defects in the thin-film and bulk cathodes. Results comparing Li(Co,Ni)O2 in the bulk and thin-film forms suggests a correlation between intrinsic stress and local strain in the thin-film. This local strain is manifested by a collapse of the six-fold rotational symmetry within the metal-metal layer of the Li(Co,Ni)O2 system into a two fold one. The relationship between annealing conditions and the resulting local strain in these films is examined.

Cross-section TEM observation of Ba2YCu3O7-x thin film on SrTiO3

1988 ◽  
Vol 46 ◽  
pp. 954-955
Author(s):  
Masato Tomita ◽  
Takayoshi Hayashi ◽  
Hidetoshi Takaoka ◽  
Yoshikazu Ishii ◽  
Youichi Enomoto ◽  
...  
Keyword(s):  
Thin Film ◽  
Cross Section ◽  
Cross Sections ◽  
Incident Angle ◽  
Annealed Film ◽  
Film Structure ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron ◽  
Film Substrate

The structure of Ba2YCu3O7-x(BYCO) has been almost completely analyzed using neutron,x-ray, and electron diffraction techniques. However, most of these analyses have studied bulk polycrystallinites or single crystals of BYCO, not the thin film structure. In this study, cross sections of thin annealed films on SrTiO3 substrate are observed using transmission electron microscopy (TEM). The crystal structure near the film/substrate interface is examined.The samples for TEM observation were cut from the same film which showed an onset temperature of 80 K. Samples for cross-sectional TEM observation were prepared by the ordinary method without using water. Milling was performed using a 4 kV Ar+ beam at an incident angle of about 15°. Observation was performed using a JEOL JEM 4000EX microscope at an accelerating voltage of 400 kV.A low magnification cross-sectional image of the BYCO annealed film is shown in Fig. 1. The film thickness is about 0.7 μm.

scholarly journals A Comparison of X-Ray Microdiffraction and Coherent Gradient Sensing in Measuring Discontinuous Curvatures in Thin Film: Substrate Systems

2005 ◽  
Vol 73 (5) ◽  
pp. 723-729 ◽  
Author(s):  
Michal A. Brown ◽  
Tae-Soon Park ◽  
Ares Rosakis ◽  
Ersan Ustundag ◽  
Young Huang ◽  
...  
Keyword(s):  
Thin Film ◽  
Stress Measurement ◽  
Plate Theory ◽  
Measurement Tool ◽  
Wafer Level ◽  
Full Field ◽  
X Ray ◽  
Deformation State ◽  
Film Substrate ◽  
Si Wafer

The coherent gradient sensor (CGS) is a shearing interferometer which has been proposed for the rapid, full-field measurement of deformation states (slopes and curvatures) in thin film-wafer substrate systems, and for the subsequent inference of stresses in the thin films. This approach needs to be verified using a more well-established but time-consuming grain orientation and stress measurement tool, X-ray microdiffraction (XRD). Both CGS and XRD are used to measure the deformation state of the same W film/Si wafer at room temperature. CGS provides a global, wafer-level measurement of slopes while XRD provides a local micromeasurement of lattice rotations. An extreme case of a circular Si wafer with a circular W film island in its center is used because of the presence of discontinuous system curvatures across the wafer. The results are also compared with a theoretical model based on elastic plate analysis of the axisymmetric biomaterial film-substrate system. Slope and curvature measurements by XRD and by CGS compare very well with each other and with theory. The favorable comparison demonstrates that wafer-level CGS metrology provides a quick and accurate alternative to other measurements. It also demonstrates the accuracy of plate theory in modeling thin film-substrate systems, even in the presence of curvature discontinuities

Local Microstructure and Stress in Al(Cu) Thin Film Structures Studied by X-Ray Microdiffraction

2001 ◽  
Vol 673 ◽  
Author(s):  
B.C. Valek ◽  
N. Tamura ◽  
R. Spolenak ◽  
A.A. MacDowell ◽  
R.S. Celestre ◽  
...  
Keyword(s):  
Thin Film ◽  
Integrated Circuits ◽  
Local Stress ◽  
Local Strain ◽  
Temperature Cycle ◽  
X Ray ◽  
Cu Thin Film ◽  
Individual Grains ◽  
Interconnect Lines ◽  
Stress Variations

ABSTRACTThe microstructure of materials (grain orientation, grain boundaries, grain size distribution, local strain/stress gradients, defects, …) is very important in defining the electromigration resistance of interconnect lines in modern integrated circuits. Recently, techniques have been developed for using submicrometer focused white and monochromatic x-ray beams at synchrotrons to obtain local orientation and strain information within individual grains of thin film materials. In this work, we use the x-ray microdiffraction beam line (7.3.3) at the Advanced Light Source to map the orientation and local stress variations in passivated Al(Cu) test structures (width: 0.7, 4.1 μm) as well as in Al(Cu) blanket films. The temperature effects on microstructure and stress were studied in those same structures by in-situ orientation and stress mapping during a temperature cycle between 25°C and 345°C. Results show large local variations in the different stress components which significantly depart from their average values obtained by more conventional techniques, yet the average stresses in both cases agree well. Possible reasons for these variations will be discussed.

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