Electrical and structural characterization of Mg-doped p-type Al0.69Ga0.31N films on SiC substrate

2007 ◽  
Vol 101 (5) ◽  
pp. 053717 ◽  
Author(s):  
Arpan Chakraborty ◽  
Craig G. Moe ◽  
Yuan Wu ◽  
Tom Mates ◽  
Stacia Keller ◽  
...  
Keyword(s):  
Structural Characterization ◽  
P Type ◽  
Mg Doped

Photoluminescence Characterization of p-type GaN:Mg

1997 ◽  
Vol 482 ◽  
Author(s):  
Dorina Corlatan ◽  
Joachim Krüger ◽  
Christian Kisielowski ◽  
Ralf Klockenbrink ◽  
Yihwan Kim ◽  
...  
Keyword(s):  
Layer Structure ◽  
Growth Conditions ◽  
Buffer Layers ◽  
Near Band Edge ◽  
Acceptor Pair ◽  
Donor Acceptor ◽  
Si Doped ◽  
P Type ◽  
Mg Doped

AbstractWe report on results of low-temperature photoluminescence measurements performed on GaN films, grown by molecular beam epitaxy (MBE) on sapphire substrates. The GaN films are either Mg doped (p-type) or consist of a Mg-doped layer on top of a Si doped GaN layer (n-type). In the p-doped samples, the sharpness of the donor-acceptor-pair transition is striking, three phonon replicas are clearly resolved. A transition band occurs around 3.4 eV, which becomes dominant for samples with an np-layer structure. The position and the composition of the near band edge transitions are influenced by the growth of the buffer layers. Depending on the growth conditions a transition at 3.51 eV can be observed.

Photoluminescence study and structural characterization of p-type ZnO doped by N and/or As acceptors

2006 ◽  
Vol 22 (2) ◽  
pp. 10-14 ◽  
Author(s):  
E Przeździecka ◽  
E Kamińska ◽  
K P Korona ◽  
E Dynowska ◽  
W Dobrowolski ◽  
...  
Keyword(s):  
Structural Characterization ◽  
Photoluminescence Study ◽  
P Type

Electrical and structural characterization of shallow As acceptors in natural p-type 2H-MoS2

2019 ◽  
Vol 114 (19) ◽  
pp. 192103
Author(s):  
J. R. Toledo ◽  
R. de Oliveira ◽  
P. H. Vaz ◽  
F. D. Brandão ◽  
G. M. Ribeiro ◽  
...  
Keyword(s):  
Structural Characterization ◽  
P Type

Electrical and Structural Characterization of Epitaxial-Grown Mg-Doped C60 Thin Films

2019 ◽  
Vol 25 (22) ◽  
pp. 7-11 ◽  
Author(s):  
Nobuaki Kojima ◽  
Masato Natori ◽  
Masafumi Yamaguchi
Keyword(s):  
Thin Films ◽  
Structural Characterization ◽  
Mg Doped

scholarly journals Investigation on the structural characterization of pulsed p-type porous silicon

2017 ◽  
Author(s):  
N. H. Abd Wahab ◽  
A. F. Abd Rahim ◽  
A. Mahmood ◽  
Y. Yusof
Keyword(s):  
Porous Silicon ◽  
Structural Characterization ◽  
P Type

MBE GROWTH AND CHARACTERIZATION OF Mg-DOPED III-NITRIDES ON SAPPHIRE

2009 ◽  
Vol 19 (01) ◽  
pp. 113-119
Author(s):  
X. CHEN ◽  
K. D. MATTHEWS ◽  
D. HAO ◽  
W. J. SCHAFF ◽  
L. F. EASTMAN ◽  
...  
Keyword(s):  
Hole Concentration ◽  
Mbe Growth ◽  
Molecular Beam Epitaxial ◽  
Strong Surface ◽  
Photo Response ◽  
Molecular Beam Epitaxial Growth ◽  
P Type ◽  
Iv Curves ◽  
Mg Doped

Plasma-assisted molecular beam epitaxial growth of Mg -doped GaN and InGaN on a sapphire substrate is investigated in this study. Electrical characteristics of p -type GaN strongly depend on the flux of Mg acceptors and the growth temperature. Only the intermediate range of Mg fluxes (beam equivalent pressures near 1×10-9T) produce p -type GaN with good electrical properties, and a maximum hole concentration of 3.5 × 1018 cm-3 is obtained with a Hall mobility of 2.1 cm2/V·s. Due to the strong surface accumulation of electrons, Hall measurements do not indicate p -type polarity for In fraction beyond 11%. In contrast, hot probe measurements show that p -polarity can be measured for the entire range of Mg -doped In mole fractions. Electroluminescence also indicates p -polarity for Ga -rich mole fractions. In x Ga1- x N p - n homojunctions are fabricated and tested. All GaN devices show low series resistance (0.03 ohm-cm2) and insignificant parasitic leakage. IV curves of all three InGaN homojunctions show rectifying characteristics under dark conditions and photo-response under outdoor sunlight, indicating the existence of holes in InGaN with up to 40% In content.

scholarly journals Electrical Characterization of MOVPE-Grown P-Type GaN:Mg Against Annealing Temperature

1999 ◽  
Vol 4 (S1) ◽  
pp. 665-670 ◽  
Author(s):  
Shizuo Fujita ◽  
Mitsuru Funato ◽  
Doo-Cheol Park ◽  
Yoshifumi Ikenaga ◽  
Shigeo Fujita
Keyword(s):  
Annealing Temperature ◽  
Hole Concentration ◽  
Electrical Characterization ◽  
Sapphire Substrates ◽  
Electrical Degradation ◽  
Scattering Centers ◽  
Hall Effect Measurements ◽  
P Type ◽  
Mg Doped

Hall effect measurements have been applied for the electrical characterization of p-type Mg-doped GaN grown by metalorganic vapor-phase epitaxy on sapphire substrates in terms of annealing temperature for dehydrogenation (N2 annealing) and hydrogenation (H2 annealing) of the acceptors. With the N2 annealing temperature from 600 to 900 °C for dehydrogenation, both hole concentration and mobility increases, showing more activation of acceptors and less incorporation of unfavorable scattering centers probably originating from Mg-H bondings. The N2 annealing at higher than the growth temperature results in reduced hole concentration, but the mobility gets higher. Some defects compensating acceptors may be induced at high temperature annealing, but they seem to be no scattering centers and be inactivated by successive hydrogenation and re-dehydrogenation at the optimum dehydrogenation temperature 900 °C. The electrical degradation of GaN due to thermal damage is not very destructive and can be well recovered by annealing treatments.

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