scholarly journals Spin torque and heating effects in current-induced domain wall motion probed by transmission electron microscopy

2007 ◽  
Vol 90 (13) ◽  
pp. 132506 ◽  
Author(s):  
F. Junginger ◽  
M. Kläui ◽  
D. Backes ◽  
U. Rüdiger ◽  
T. Kasama ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Domain Wall ◽  
Wall Motion ◽  
Domain Wall Motion ◽  
Spin Torque ◽  
Transmission Electron ◽  
Heating Effects

scholarly journals Controlled spin-torque driven domain wall motion using staggered magnetic wires

2020 ◽  
Vol 116 (3) ◽  
pp. 032402 ◽  
Author(s):  
H. Mohammed ◽  
S. Al Risi ◽  
T. L. Jin ◽  
J. Kosel ◽  
S. N. Piramanayagam ◽  
...  
Keyword(s):  
Domain Wall ◽  
Wall Motion ◽  
Domain Wall Motion ◽  
Spin Torque ◽  
Magnetic Wires

Influence of uniaxial anisotropy on domain wall motion driven by spin torque

2015 ◽  
Vol 92 (5) ◽  
Author(s):  
P. Chureemart ◽  
R. F. L. Evans ◽  
I. D'Amico ◽  
R. W. Chantrell
Keyword(s):  
Domain Wall ◽  
Wall Motion ◽  
Uniaxial Anisotropy ◽  
Domain Wall Motion ◽  
Spin Torque

Direct Observation of Defect Motion in Silicon By High-Resolution Transmission Electron Microscopy

1985 ◽  
Vol 43 ◽  
pp. 358-359
Author(s):  
M. A. Parker ◽  
R. Sinclair
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Beam ◽  
High Resolution ◽  
Crystal Defects ◽  
Incident Electron Beam ◽  
Transmission Electron ◽  
Heating Effects ◽  
Electron Beam Heating

Observations of defect motion by high resolution transmission electron microscopy (HRTEM) are rare. Unfortunately, the application of this technique has been limited to a few unique materials, those that can obtain sufficient thermal energy for the initiation of atomic motion through the heating effects of the incident electron beam. In earlier work, it was speculated that events such as the motion of crystal defects, observed in cadmium telluride (CdTe) with the electron beam heating method, might become evident in materials such as silicon (Si) if only sufficiently high temperatures could be achieved (∼ 600°C) in-situ.A silicon specimen with a suitable population of defects was chosen for examination; it consisted of a cross-section of.3 μ ﹛100﹜ silicon on ﹛1102﹜ sapphire (SOS from Union Carbide) which was implant amorphized by 28Si+ ion implantation at an energy of ∼ 170keV.

High-speed Magnetic Memory based on Spin-Torque Domain Wall Motion

2009 ◽  
Author(s):  
N. Ishiwata ◽  
S. Fukami ◽  
T. Suzuki ◽  
K. Nagahara ◽  
N. Ohshima ◽  
...  
Keyword(s):  
Domain Wall ◽  
High Speed ◽  
Wall Motion ◽  
Domain Wall Motion ◽  
Magnetic Memory ◽  
Spin Torque

scholarly journals Thermally induced spin torque and domain-wall motion in superconductor/antiferromagnetic-insulator bilayers

2021 ◽  
Vol 103 (9) ◽  
Author(s):  
G. A. Bobkov ◽  
I. V. Bobkova ◽  
A. M. Bobkov ◽  
Akashdeep Kamra
Keyword(s):  
Domain Wall ◽  
Wall Motion ◽  
Domain Wall Motion ◽  
Spin Torque ◽  
Thermally Induced

scholarly journals Temperature Dependence of the Spin Torque Effect in Current-Induced Domain Wall Motion

2006 ◽  
Vol 97 (4) ◽  
Author(s):  
M. Laufenberg ◽  
W. Bührer ◽  
D. Bedau ◽  
P.-E. Melchy ◽  
M. Kläui ◽  
...  
Keyword(s):  
Domain Wall ◽  
Temperature Dependence ◽  
Wall Motion ◽  
Domain Wall Motion ◽  
Spin Torque

scholarly journals Concepts for Domain Wall Motion in Nanoscale Ferromagnetic Elements due to Spin Torque and in Particular Oersted Fields

2009 ◽  
Vol 14 (2) ◽  
pp. 53-61 ◽  
Author(s):  
Mathias Klaui ◽  
Dennis Ilgaz ◽  
Lutz Heyne ◽  
June-Seo Kim ◽  
Olivier Boulle ◽  
...  
Keyword(s):  
Domain Wall ◽  
Wall Motion ◽  
Domain Wall Motion ◽  
Spin Torque
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