Crystallization kinetics of ultrathin amorphous Si film induced by Al metal layer under thermal annealing and pulsed laser irradiation

2007 ◽  
Vol 101 (4) ◽  
pp. 043518 ◽  
Author(s):  
Yung-Chiun Her ◽  
Chih-Wei Chen
Keyword(s):  
Laser Irradiation ◽  
Thermal Annealing ◽  
Crystallization Kinetics ◽  
Metal Layer ◽  
Pulsed Laser ◽  
Amorphous Si ◽  
Kinetics Of ◽  
Pulsed Laser Irradiation

Pulsed Laser Induced Recrystallization of Amorphous Si

2000 ◽  
Vol 638 ◽  
Author(s):  
Sebastiano Tosto
Keyword(s):  
Computer Simulation ◽  
Laser Irradiation ◽  
Rapid Solidification ◽  
3D Model ◽  
Pulsed Laser ◽  
Amorphous Si ◽  
Pulsed Laser Irradiation

AbstractThe paper introduces a 3D model to simulate the recrystallization microstructure of amorphous Si induced by pulsed laser irradiation. The computer simulation shows how the microstructure is modified when introducing into the model the assumption of rapid solidification quenching.

Time-Resolved X-Ray Absorption of An Amorphous Si Foil During Pulsed Laser Irradiation

1985 ◽  
Vol 51 ◽  
Author(s):  
Kouichi Murakami ◽  
Hans C. Gerritsen ◽  
Hedser Van Brug ◽  
Fred Bijkerk ◽  
Frans W. Saris ◽  
...  
Keyword(s):  
Laser Irradiation ◽  
Direct Evidence ◽  
Pulsed Laser ◽  
Time Resolved ◽  
Edge Structure ◽  
X Ray ◽  
Nanosecond Pulsed Laser ◽  
Amorphous Si ◽  
X Ray Absorption ◽  
Pulsed Laser Irradiation

ABSTRACTWe report time-resolved X-ray absorption and extended X-ray absorption fine structure (EXAFS) measurements on amorphous silicon under nanosecond pulsed-laser irradiation. Each measurement was performed with one laser shot in the X-ray energy range from 90 to 300 eV. An X-ray absorption spectrum for induced liquid Si (liq*Si) was first observed above an energy density of 0.17 J/cm2. It differs significantly from the spectrum for amorphous Si and characteristically shows the disappearance of the Si-L(II,III) edge structure at around 100 eV. This phenomenon is interpreted in terms of a significant reduction in the 3s-like character of the unfilled part of the conduction band of liq*Si compared to that of amorphous Si. This is the first direct evidence that liq*Si has a metallic-like electronic structure. Timeresolved EXAFS results are also discussed briefly.

NUCLEATION KINETICS OF CdTe/CdTe (111) HOMOEPITAXY BY LASER MBE

1985 ◽  
Vol 56 ◽  
Author(s):  
J.T. Cheung
Keyword(s):  
Epitaxial Growth ◽  
Laser Irradiation ◽  
High Power ◽  
Thermal Evaporation ◽  
Pulsed Laser ◽  
Sticking Coefficient ◽  
Nucleation Kinetics ◽  
Laser Mbe ◽  
Kinetics Of ◽  
Pulsed Laser Irradiation

AbstractCdTe evaporates into Cd and Te atoms under high power, pulsed laser irradiation. The mechanism is different from thermal evaporation where only atomic Cd and molecular Te are formed. The presence of Te atoms is responsible for some unique nucleation processes, such as the epitaxial growth of CdTe on (111) CdTe substrates with either polarity and the enhancement in sticking coefficient in CdTe deposition.

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