scholarly journals Mapping of polarization and detrapping effects in synthetic single crystal chemical vapor deposited diamond by ion beam induced charge imaging

2007 ◽  
Vol 101 (6) ◽  
pp. 063711 ◽  
Author(s):  
A. Lohstroh ◽  
P. J. Sellin ◽  
S. G. Wang ◽  
A. W. Davies ◽  
J. M. Parkin
Keyword(s):  
Single Crystal ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Crystal Chemical ◽  
Chemical Vapor Deposited ◽  
Induced Charge

Soft x-ray measurements using photoconductive type-IIa and single-crystal chemical vapor deposited diamond detectors

2008 ◽  
Vol 79 (10) ◽  
pp. 10E923 ◽  
Author(s):  
A. S. Moore ◽  
C. D. Bentley ◽  
J. M. Foster ◽  
G. Goedhart ◽  
P. Graham ◽  
...  
Keyword(s):  
Single Crystal ◽  
Chemical Vapor ◽  
Crystal Chemical ◽  
X Ray ◽  
Chemical Vapor Deposited

scholarly journals Optical properties of epitaxial single-crystal chemical-vapor-deposited diamond

2007 ◽  
Author(s):  
Giorgio Turri ◽  
Ying Chen ◽  
Michael Bass ◽  
David Orchard ◽  
James E. Butler ◽  
...  
Keyword(s):  
Optical Properties ◽  
Single Crystal ◽  
Chemical Vapor ◽  
Crystal Chemical ◽  
Chemical Vapor Deposited

Ion Beam Induced Interfacial Reactions in Molybdenum Thin Films on Silicon

1981 ◽  
Vol 39 ◽  
pp. 162-163
Author(s):  
L. J. Chen ◽  
L. S. Hung ◽  
J. W. Mayer
Keyword(s):  
Ion Beam ◽  
Chemical Vapor ◽  
Interfacial Reactions ◽  
Practical Applications ◽  
Microelectronic Devices ◽  
Recent Emergence ◽  
Chemical Vapor Deposited ◽  
Atomic Mixing ◽  
Silicon Interface ◽  
Kinetics Of

When an energetic ion penetrates through an interface between a thin film (of species A) and a substrate (of species B), ion induced atomic mixing may result in an intermixed region (which contains A and B) near the interface. Most ion beam mixing experiments have been directed toward metal-silicon systems, silicide phases are generally obtained, and they are the same as those formed by thermal treatment.Recent emergence of silicide compound as contact material in silicon microelectronic devices is mainly due to the superiority of the silicide-silicon interface in terms of uniformity and thermal stability. It is of great interest to understand the kinetics of the interfacial reactions to provide insights into the nature of ion beam-solid interactions as well as to explore its practical applications in device technology.About 500 Å thick molybdenum was chemical vapor deposited in hydrogen ambient on (001) n-type silicon wafer with substrate temperature maintained at 650-700°C. Samples were supplied by D. M. Brown of General Electric Research & Development Laboratory, Schenectady, NY.

Temperature dependent mobility in single‐crystal and chemical vapor‐deposited diamond

1993 ◽  
Vol 73 (6) ◽  
pp. 2888-2894 ◽  
Author(s):  
L. S. Pan ◽  
D. R. Kania ◽  
P. Pianetta ◽  
J. W. Ager ◽  
M. I. Landstrass ◽  
...  
Keyword(s):  
Single Crystal ◽  
Chemical Vapor ◽  
Temperature Dependent ◽  
Chemical Vapor Deposited
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