Bragg-case K⃗g and K⃗0 beam double-crystal synchrotron studies of growth sectors and dislocations in synthetic diamonds

2007 ◽  
Vol 101 (5) ◽  
pp. 053518 ◽  
Author(s):  
W. K. Wierzchowski ◽  
Moreton Moore
Keyword(s):  
Double Crystal ◽  
Synthetic Diamonds ◽  
Synchrotron Studies

Double-crystal diffractometric and topographic studies of (111) oriented synthetic diamonds

1996 ◽  
Vol 29 (3) ◽  
pp. 793-800 ◽  
Author(s):  
Grzegorz Kowalski ◽  
Moreton Moore ◽  
Gary Gledhill ◽  
Zoran Maricic
Keyword(s):  
Double Crystal ◽  
Synthetic Diamonds

Reflection electron microscopy of as-grown diamond surfaces

1993 ◽  
Vol 51 ◽  
pp. 1006-1007
Author(s):  
Z.L. Wang ◽  
J. Bentley ◽  
R.E. Clausing ◽  
L. Heatherly ◽  
L.L. Horton
Keyword(s):  
Electron Microscopy ◽  
Synthetic Diamond ◽  
High Energy ◽  
Dark Field ◽  
Reverse Direction ◽  
Diamond Surfaces ◽  
Grain Sizes ◽  
Synthetic Diamonds ◽  
De Beers ◽  
Reflection Electron Microscopy

It has been found that the abrasion of diamond-on-diamond depends on the crystal orientation. For a {100} face, the friction coefficient for sliding along <011> is much higher than that along <001>. For a {111} face, the abrasion along <11> is different from that in the reverse direction <>. To interpret these effects, a microcleavage mechanism was proposed in which the {100} and {111} surfaces were assumed to be composed of square-based pyramids and trigonal protrusions, respectively. Reflection electron microscopy (REM) has been applied to image the microstructures of these diamond surfaces.{111} surfaces of synthetic diamond:The synthetic diamonds used in this study were obtained from the De Beers Company. They are in the as-grown condition with grain sizes of 0.5-1 mm without chemical treatment or mechanical polishing. By selecting a strong reflected beam in the reflection high-energy electron diffraction (RHEED) pattern, the dark-field REM image of the surface is formed (Fig. 1).

Defect morphology in thick relaxed layers of InGaAs on GaAs

1990 ◽  
Vol 48 (4) ◽  
pp. 668-669
Author(s):  
R H Dixon ◽  
P Kidd ◽  
P J Goodhew
Keyword(s):  
Electron Microscopy ◽  
Surface Morphology ◽  
Growth Conditions ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
Strained Layers ◽  
Good Surface ◽  
Transmission Electron ◽  
Device Structures ◽  
Surface Morphologies

Thick relaxed InGaAs layers grown epitaxially on GaAs are potentially useful substrates for growing high indium percentage strained layers. It is important that these relaxed layers are defect free and have a good surface morphology for the subsequent growth of device structures.3μm relaxed layers of InxGa1-xAs were grown on semi - insulating GaAs substrates by Molecular Beam Epitaxy (MBE), where the indium composition ranged from x=0.1 to 1.0. The interface, bulk and surface of the layers have been examined in planar view and cross-section by Transmission Electron Microscopy (TEM). The surface morphologies have been characterised by Scanning Electron Microscopy (SEM), and the bulk lattice perfection of the layers assessed using Double Crystal X-ray Diffraction (DCXRD).The surface morphology has been found to correlate with the growth conditions, with the type of defects grown-in to the layer (e.g. stacking faults, microtwins), and with the nature and density of dislocations in the interface.

A DOUBLE CRYSTAL MONOCHROMATOR FOR SOFT X-RAY BEAM LINE OF UVSOR

1986 ◽  
Vol 47 (C8) ◽  
pp. C8-135-C8-137
Author(s):  
T. MURATA ◽  
T. MATSUKAWA ◽  
M. MORI ◽  
M. OBASHI ◽  
S.-I. NAO-E ◽  
...  
Keyword(s):  
Beam Line ◽  
Double Crystal ◽  
X Ray ◽  
Double Crystal Monochromator

As-grown, green synthetic diamonds

2005 ◽  
Vol 29 (7) ◽  
pp. 387-394
Author(s):  
Christopher M. Breeding ◽  
James E. Shigley ◽  
Andy H. Shen
Keyword(s):  
Synthetic Diamonds

Double Crystal X‐Ray Dilatometer Using Continuous Radiation

1971 ◽  
Vol 42 (2) ◽  
pp. 196-199 ◽  
Author(s):  
Virgil E. Bottom ◽  
Renê Ayres Carvalho
Keyword(s):  
Double Crystal ◽  
X Ray ◽  
Continuous Radiation

Strain Shift Coefficients for Phonons in Si-Ge Heterostructures

1991 ◽  
Vol 239 ◽  
Author(s):  
J.-M. Baribeau ◽  
D. J. Lockwood
Keyword(s):  
Molecular Beam ◽  
Composition Dependence ◽  
Vibration Mode ◽  
Phonon Frequency ◽  
Longitudinal Optical ◽  
Stress Factor ◽  
Double Crystal ◽  
Raman Scattering Spectroscopy ◽  
X Ray ◽  
Shift Coefficient

ABSTRACTStrain shift coefficient measurements for longitudinal optical phonons in molecular beam epitaxy grown metastable pseudomorphic Si1−xGex layers on (100) Si (0 < x < 0.35) and Ge (0.80 < x < 1) are reported. Strain in partially relaxed annealed specimens was obtained by double-crystal x-ray diffractometry and the corresponding strain phonon shift was measured by Raman scattering spectroscopy. For epilayers grown on Si it was found that the epilayer Si-Si phonon frequency varies linearly with strain. The magnitude of the strain shift coefficient b however showed a small composition dependence varying from b ≈ -700 cm-1 at x = 0 to b ≈ -950 cm-1 at x = 0.35, corresponding to a stress factor τ = 0.40 + 0.57x: + 0.13x2 cm-1/kbar. For the Ge-Ge vibration mode in epilayers grown on Ge, b decreased from ∼-425 cm-1 at x = 1 to ∼-500 cm-1 at x = 0.8, corresponding to a stress factor τ ≈ 0.52 – 0.14x - 0.08x2 cm-1/kbar.

Assessment of Thin Heteroepitaxial Layers Using Skew Angle Asymmetrical X-Ray Double Crystal Diffraction

1988 ◽  
Vol 138 ◽  
Author(s):  
S. J. Miles ◽  
G. S. Green ◽  
B. K. Tanner ◽  
M. A. G. Halliwell ◽  
M. H. Lyons
Keyword(s):  
Skew Angle ◽  
Double Crystal ◽  
X Ray ◽  
Heteroepitaxial Layers
Sign in / Sign up

Export Citation Format

Share Document