Excitation dynamics of the 1.54μm emission in Er doped GaN synthesized by metal organic chemical vapor deposition

2007 ◽  
Vol 90 (5) ◽  
pp. 051110 ◽  
Author(s):  
C. Ugolini ◽  
N. Nepal ◽  
J. Y. Lin ◽  
H. X. Jiang ◽  
J. M. Zavada
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Organic ◽  
Er Doped ◽  
Organic Chemical Vapor Deposition ◽  
Excitation Dynamics

scholarly journals Erbium-doped GaN epilayers synthesized by metal-organic chemical vapor deposition

2006 ◽  
Vol 955 ◽  
Author(s):  
C. Ugolini ◽  
N. Nepal ◽  
J. Y. Lin ◽  
H. X. Jiang ◽  
J. M. Zavada
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Excitation Energies ◽  
Metal Organic ◽  
Er Doped ◽  
Organic Chemical Vapor Deposition

ABSTRACTGaN is an excellent host for Er due to the low thermal quenching of radiative intra-4f Er3+ transitions at 1.54 μm. Er doped GaN structures are promising for emitters and amplifiers operating at the main telecommunication wavelength. In recent studies, Er doped III-Nitride epilayers were obtained by ion implantation, hydride vapor phase epitaxy (HVPE), metal organic molecular beam epitaxy (MOMBE), or molecular beam epitaxy (MBE). But, in-situ Er doping of III-nitride epilayers has not been achieved by metal organic chemical vapor deposition (MOCVD), mostly due to the low vapor pressure and lack of suitable, metal organic Er sources. Since n and p type III-nitride epilayers with excellent electrical properties and high crystalline quality are easily achieved by the MOCVD method, in-situ incorporation of Er into III-nitride materials by MOCVD is a very attractive method for creating highly efficient optoelectronic devices operating at 1.54 μm. We report on the experimental study and synthesis of Er doped GaN by MOCVD. Photoluminescence (PL) with above and below bandgap excitation energies were employed to study the optical properties of Er doped GaN. PL spectra of these Er doped layers exhibit a strong 1.54 μm emission, corresponding to the intra-4f transition of the 4I13/2 (first excited state) to the 4I15.2 (ground state) of Er3+. The mechanisms of optical transitions involving different excitation energies, and potential applications of Er doped GaN structures in the communication wavelength are also discussed.

scholarly journals Laser‐Assisted Metal–Organic Chemical Vapor Deposition of Gallium Nitride

2021 ◽  
Vol 15 (6) ◽  
pp. 2170024
Author(s):  
Yuxuan Zhang ◽  
Zhaoying Chen ◽  
Kaitian Zhang ◽  
Zixuan Feng ◽  
Hongping Zhao
Keyword(s):  
Gallium Nitride ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

scholarly journals Growth-Etch Metal–Organic Chemical Vapor Deposition Approach of WS2 Atomic Layers

ACS Nano ◽  
2020 ◽  
Author(s):  
Assael Cohen ◽  
Avinash Patsha ◽  
Pranab K. Mohapatra ◽  
Miri Kazes ◽  
Kamalakannan Ranganathan ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Vertical β-Ga2O3 field plate Schottky barrier diode from metal-organic chemical vapor deposition

2021 ◽  
Vol 118 (16) ◽  
pp. 162109
Author(s):  
Esmat Farzana ◽  
Fikadu Alema ◽  
Wan Ying Ho ◽  
Akhil Mauze ◽  
Takeki Itoh ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Schottky Barrier ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Schottky Barrier Diode ◽  
Organic Chemical ◽  
Field Plate ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition
Sign in / Sign up

Export Citation Format

Share Document