Morphology of basal plane dislocations in 4H-SiC homoepitaxial layers grown by chemical vapor deposition

2007 ◽  
Vol 101 (5) ◽  
pp. 053517 ◽  
Author(s):  
X. Zhang ◽  
S. Ha ◽  
Y. Hanlumnyang ◽  
C. H. Chou ◽  
V. Rodriguez ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Basal Plane ◽  
Chemical Vapor ◽  
Homoepitaxial Layers

Development of Vertical 3×2〞LPCVD System for Fast Epitaxial Growth on 4H-SiC

2012 ◽  
Vol 717-720 ◽  
pp. 105-108 ◽  
Author(s):  
Wan Shun Zhao ◽  
Guo Sheng Sun ◽  
Hai Lei Wu ◽  
Guo Guo Yan ◽  
Liu Zheng ◽  
...  
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Growth Process ◽  
Chemical Vapor ◽  
Low Pressure ◽  
High Quality ◽  
Pressure Chemical ◽  
Homoepitaxial Layers

A vertical 3×2〞low pressure chemical vapor deposition (LPCVD) system has been developed to realize fast epitaxial growth of 4H-SiC. The epitaxial growth process was optimized and it was found that the growth rate increases with increasing C/Si ratio and tends to saturate when C/Si ratio exceeded 1. Mirror-like thick 4H-SiC homoepitaxial layers are obtained at 1500 °C and C/Si ratio of 0.5 with a growth rate of 25 μm/h. The minimum RMS roughness is 0.20 nm and the FWHM of rocking curves of epilayers grown for 1 hour and 2 hours are 26.2 arcsec and 32.4 arcsec, respectively. These results indicate that high-quality thick 4H-SiC epilayers can be grown successfully on the off-orientation 4H-SiC substrates.

High-Quality 100/150 mm p-Type 4H-SiC Epitaxial Wafer for High-Voltage Bipolar Devices

2017 ◽  
Vol 897 ◽  
pp. 55-58 ◽  
Author(s):  
Naoto Ishibashi ◽  
Keisuke Fukada ◽  
Akira Bandoh ◽  
Kenji Momose ◽  
Hiroshi Osawa
Keyword(s):  
Chemical Vapor Deposition ◽  
High Voltage ◽  
Vapor Deposition ◽  
Basal Plane ◽  
Doping Concentration ◽  
Chemical Vapor ◽  
High Quality ◽  
Bipolar Devices ◽  
Device Applications ◽  
P Type

This paper presents a high-quality 100/150 mm p-type 4H-SiC epitaxial wafer prepared by chemical vapor deposition; this wafer is suitable for high-voltage bipolar device applications. The density of killer defects for bipolar devices including downfalls, triangular-shaped defects, and basal plane dislocations (BPDs), is less than 0.1 cm-2 in the proposed 100 mm n/p multilayer epitaxial wafer. The in-plane thickness and doping uniformity of the 150 mm p-layer is 3.0% and 11.0%, respectively. The doping concentration of the p-layer can be controlled in the 1E+16 cm-3 to 1E+19 cm-3 range.

Low Defect Thick Homoepitaxial Layers Grown on 4H-SiC Wafers for 6500 V JBS Devices

2019 ◽  
Vol 954 ◽  
pp. 114-120
Author(s):  
Ying Xi Niu ◽  
Xiao Yan Tang ◽  
Li Xin Tian ◽  
Liu Zheng ◽  
Wen Ting Zhang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Process Optimization ◽  
Vapor Deposition ◽  
Defect Density ◽  
Schottky Diodes ◽  
Chemical Vapor ◽  
Epitaxial Films ◽  
Homoepitaxial Layers

70-um thick homoepitaxial layers with very low defect density were grown on 6-inch 4° off-axis wafers using hot-wall chemical vapor deposition (CVD). Process optimization resulted in reduction of the density of triangular defects from 1.01 cm-2 to 0.14 cm-2. The treatment of wafer (CMP or selection) was essential. The in-situ etch process was optimized prior to the epitaxial growth. Junction Barrier Schottky diodes fabricated on the epitaxial films presented a typical I–V characteristic and a block voltage of 6500 V.

Influence of Growth Mechanism on Carrier Lifetime in On-Axis Homoepitaxial Layers of 4H-SiC

2012 ◽  
Vol 717-720 ◽  
pp. 157-160
Author(s):  
Jawad ul Hassan ◽  
Louise Lilja ◽  
I.D. Booker ◽  
Peder Bergman ◽  
Erik Janzén
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Carrier Lifetime ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Growth Mechanisms ◽  
Chemical Vapor Deposition Reactor ◽  
Homoepitaxial Growth ◽  
Homoepitaxial Layers ◽  
Charge Carrier Lifetime

In this report we present homoepitaxial growth of 4H-SiC on Si-face, nominally on-axis substrates with diameters up to 76 mm in a hot-wall chemical vapor deposition reactor. A comparatively low carrier lifetime has been observed in these layers; local variations in carrier lifetime are different from standard epilayers on off-cut substrates. The properties of the layers were studied with focus on charge carrier lifetime and its correlation with starting growth conditions, inhomogeneities of surface morphology and different growth mechanisms.

Characterization of Ge-Doped Homoepitaxial Layers Grown by Chemical Vapor Deposition

2014 ◽  
Vol 778-780 ◽  
pp. 261-264 ◽  
Author(s):  
Tomasz Sledziewski ◽  
Svetlana Beljakowa ◽  
Kassem Alassaad ◽  
Pawel Kwasnicki ◽  
Roxana Arvinte ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Deep Level ◽  
Chemical Vapor ◽  
Extended Defects ◽  
Enhanced Mobility ◽  
Hall Effect Measurements ◽  
Transient Spectroscopy ◽  
Equal Compensation ◽  
Homoepitaxial Layers

We have investigated the electrical properties of n-type 4H-SiC in-situ germanium-doped homoepitaxial layers grown by chemical vapor deposition. Germanium is an isoelectronic impurity and, therefore, not expected to contribute to the conductivity. However, Hall effect measurements taken on samples with and without germanium revealed an enhanced mobility by a factor of ≈2 at T ≈ 55 K in the germanium-doped sample despite equal free electron concentration and equal compensation. Deep level transient spectroscopy (DLTS) measurements taken on germanium-doped samples reveal negative peaks indicating the presence of charged extended defects.

Effect of germanium doping on electrical properties of n-type 4H-SiC homoepitaxial layers grown by chemical vapor deposition

2016 ◽  
Vol 120 (20) ◽  
pp. 205701 ◽  
Author(s):  
T. Sledziewski ◽  
M. Vivona ◽  
K. Alassaad ◽  
P. Kwasnicki ◽  
R. Arvinte ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Electrical Properties ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Homoepitaxial Layers
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